STB31N65M5

STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages Features TAB Order code 1 D2PAK 1 2 RDS(on ) max. ID Package STF31N65M5 TAB STP31N65M5 1 2 3 TO-247 1 2 710 V 0.148 Ω STW31N65M5 3 D(2, TAB) D2PAK STB31N65M5 3 TO-220FP TO-220 VDS @ TJMAX 3 • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested 22 A TO-220FP TO-220 TO-247 Applications G(1) • S(3) AM01475v1_noZen Switching applications Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 4 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK, TO-220, TO-220FP TO-247 VGS Gate-source voltage ±25 Drain current (continuous) at ID Drain current (continuous) at TC = 100 °C V 22 22 (1) A 13.9 13.9 (1) A TC = 25 °C ID Unit IDM (2) Drain current (pulsed) 88 88 (1) A PTOT Total power dissipation at TC = 25 °C 150 30 W VISO Insulation withstand voltage (RMS) from all three leads to external 2500 V heat-sink (t = 1 s, TC = 25 °C) dv/dt (3) dv/dt (4) Tj Tstg Peak diode recovery voltage slope 15 MOSFET dv/dt ruggedness 50 Operating junction temperature range V/ns -55 to 150 Storage temperature range °C 1. Limited by package. 2. Limited by maximum junction temperature. 3. ISD ≤ 22 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V. 4. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb Value D²PAK TO-220 TO-247 4.17 0.83 °C/W 50 °C/W 0.83 62.5 30 Unit TO-220FP °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. DS8912 - Rev 4 page 2/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings Table 3. Avalanche characteristics Symbol IAR Parameter Avalanche current, repetitive or not repetitive Value Unit 5 A 410 mJ (pulse width limited by Tjmax) Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DS8912 - Rev 4 page 3/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off-state Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. 650 Zero gate voltage drain current 1 µA 100 µA ±100 nA 4 5 V 0.124 0.148 Ω Min. Typ. Max. Unit - 1865 - pF - 45 - pF - 4.2 - pF - 146 - pF - 43 - pF VGS = 0 V, VDS = 650 V, TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 11 A Unit V VGS = 0 V, VDS = 650 V IDSS Max. 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Equivalent capacitance time related Co(er) (2) Equivalent capacitance energy related VDS = 0 to 520 V Rg Intrinsic gate resistance f = 1 MHz - 2.8 - Ω Qg Total gate charge VDD = 520 V, ID = 11 A - 45 - nC Qgs Gate-source charge VGS= 0 to 10 V - 11.5 - nC Qgd Gate-drain charge (see Figure 18. Test circuit for gate charge behavior) - 20 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VGS = 0 V, 1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. DS8912 - Rev 4 page 4/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(v) Voltage delay time VDD= 400 V, ID = 14 A, - 46 - ns tr(v) Voltage rise time RG = 4.7 Ω - 8 - ns Current fall time VGS = 10 V - 8.5 - ns Crossing time (see Figure 19. Test circuit for inductive load switching and diode recovery times and Figure 22. Switching time waveform) - 11 - ns Min. Typ. Max. Unit tf(i) tc(off) Table 7. Source-drain diode Symbol ISD ISDM (1) (2) Parameter Test conditions Source-drain current - 22 A Source-drain current (pulsed) - 88 A 1.5 V Forward on voltage ISD = 22 A, VGS = 0 V - trr Reverse recovery time - 336 ns Qrr Reverse recovery charge - 5 μC IRRM Reverse recovery current ISD = 22 A, di/dt = 100 A/μs, VDD = 100 V (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 30 A Reverse recovery time ISD = 22 A, di/dt = 100 A/μs, - 406 ns Qrr Reverse recovery charge - 6 μC IRRM Reverse recovery current VDD= 100 V, Tj= 150 °C ( see Figure 19. Test circuit for inductive load switching and diode recovery times) - 31 A VSD trr 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DS8912 - Rev 4 page 5/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for D²PAK, TO-220 and TO-247 Figure 2. Thermal impedance for D²PAK, TO-220 and TO-247 AM15197v1 ) on Op Li erati mi o ted n in by thi ma s ar x R ea is D ID (A) S( 10 10µs 100µs 1ms 1 10ms 0.1 10 1 0.1 100 VDS(V) Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP AM15190v1 ) S( 10 on O pe m ratio ite n d by in th m is ax ar RD ea is ID (A) 10µs 100µs Li 1 1ms 10ms 0.1 0.01 0.1 10 1 100 VDS(V) Figure 5. Output characteristics Figure 6. Transfer characteristics AM15193v1 ID (A) VGS= 9, 10 V VGS= 8 V 40 30 VGS= 7 V 20 DS8912 - Rev 4 VDS= 25 V 40 30 20 10 0 AM15198v1 ID (A) VGS= 6 V 0 5 10 15 20 25 VDS(V) 10 0 3 4 5 6 7 8 9 VGS(V) page 6/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage AM15199v1 VGS (V) VDS (V) VDD=520V 12 500 ID=11A VDS 10 400 8 Figure 8. Static drain-source on-resistance AM15200v1 RDS(on) (W) 0.145 VGS=10V 0.140 0.135 0.130 300 6 200 4 0.125 0.120 0.115 100 2 0 0 20 10 30 0 50 Qg (nC) 40 Figure 9. Capacitance variations 10000 15 20 ID(A) AM15195v1 Eoss (µJ) 8 7 Ciss 1000 6 5 4 100 Coss 3 2 10 Crss 1 0.1 10 5 0 Figure 10. Output capacitance stored energy AM15202v1 C (pF) 0.110 0.105 1 10 100 VDS(V) Figure 11. Normalized gate threshold voltage vs temperature AM05459v2 VGS(th) (norm) 1.10 ID = 250 µA VDS = VGS 1 0 0 100 200 300 400 500 600 VDS(V) Figure 12. Normalized on-resistance vs temperature AM05460v2 RDS(on) (norm) 2.1 1.9 VGS= 10 V ID= 11 A 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 DS8912 - Rev 4 0 25 50 75 100 TJ(°C) 0.5 -50 -25 0 25 50 75 100 TJ(°C) page 7/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical characteristics (curves) Figure 14. Normalized V(BR)DSS vs temperature Figure 13. Source-drain diode forward characteristics AM05461v1 VSD (V) AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0.0 0.94 0 2 4 6 8 0.92 -50 -25 10 ISD(A) 0 25 50 75 100 TJ(°C) Figure 15. Switching energy vs gate resistance AM15196v1 E (µJ) 300 VDD=400V VGS=10V ID=14A Eon 250 200 150 Eoff 100 50 0 Note: DS8912 - Rev 4 0 10 20 30 40 RG(W) Eon including reverse recovery of a SiC diode. page 8/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A B L A B 3.3 µF D G + VD 100 µH fast diode B Figure 20. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 21. Unclamped inductive waveform V(BR)DSS Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay -off IDM Vgs 90%Vgs on ID Vgs(I(t )) VDD VDD 10%Vds 10%Id Vds Trise AM01472v1 DS8912 - Rev 4 Tfall Tcross --over AM05540v2 page 9/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS8912 - Rev 4 page 10/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK (TO-263) package information 4.1 D²PAK (TO-263) package information Figure 23. D²PAK (TO-263) type A package outline 0079457_25 DS8912 - Rev 4 page 11/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK (TO-263) package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS8912 - Rev 4 Typ. 0.40 0° 8° page 12/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK (TO-263) package information Figure 24. D²PAK (TO-263) type B package outline 0079457_26_B DS8912 - Rev 4 page 13/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK (TO-263) package information Table 9. D²PAK (TO-263) type B mechanical data Dim. mm Min. Max. A 4.36 4.56 A1 0 0.25 b 0.70 0.90 b1 0.51 0.89 b2 1.17 1.37 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.34 D 8.60 9.00 D1 6.90 7.50 E 10.15 10.55 E1 8.10 8.70 e 2.54 BSC H 15.00 15.60 L 1.90 2.50 L1 1.65 L2 1.78 L3 L4 DS8912 - Rev 4 Typ. 0.25 4.78 5.28 page 14/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK (TO-263) package information Figure 25. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS8912 - Rev 4 page 15/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK packing information 4.2 D²PAK packing information Figure 26. D²PAK tape outline DS8912 - Rev 4 page 16/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK packing information Figure 27. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. D²PAK tape and reel mechanical data Tape Dim. DS8912 - Rev 4 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 17/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK type B packing information 4.3 D²PAK type B packing information Figure 28. D²PAK type B tape outline Figure 29. D²PAK type B reel outline T 40mm min. access hole at slot location B D C N A Full radius Tape slot in core for tape start 2.5mm min.width G measured at hub AM06038v1 DS8912 - Rev 4 page 18/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 D²PAK type B packing information Table 11. D²PAK type B reel mechanical data Dim. mm Min. A DS8912 - Rev 4 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T Max. 13.2 26.4 30.4 page 19/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-220FP package information 4.4 TO-220FP package information Figure 30. TO-220FP package outline 7012510_Rev_12_B DS8912 - Rev 4 page 20/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS8912 - Rev 4 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 21/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-220 type A package information 4.5 TO-220 type A package information Figure 31. TO-220 type A package outline 0015988_typeA_Rev_22 DS8912 - Rev 4 page 22/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-220 type A package information Table 13. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS8912 - Rev 4 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 23/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-247 package information 4.6 TO-247 package information Figure 32. TO-247 package outline 0075325_9 DS8912 - Rev 4 page 24/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 TO-247 package information Table 14. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS8912 - Rev 4 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 25/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Ordering information 5 Ordering information Table 15. Order codes Order code Marking STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 4 31N65M5 Package Packing D2PAK Tape e reel TO-220FP TO-220 Tube TO-247 page 26/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Revision history Table 16. Document revision history Date Revision 23-Feb-2012 1 Changes First release. – Modified note 2 under the Table 2. 10-Sep-2012 2 – Updated typical values in Table 4, 5 and 6. – Added Section 2.1. – Minor text changes on the cover page. 05-Mar-2013 3 Added dv/dt value on Table 2: Absolute maximum ratings. The part number STFI31N65M5 has been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 15-Apr-2019 4 Updated features and description in cover page. Updated Section 4 Package information. Added Section 5 Ordering information. Minor text changes. DS8912 - Rev 4 page 27/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 5 4.1 D²PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.6 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 DS8912 - Rev 4 page 28/29 STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS8912 - Rev 4 page 29/29