STB32N65M5
Datasheet
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFET
in D²PAK package
Features
TAB
2
3
1
D²PAK
Order codes
VDS at Tjmax.
RDS(on) max.
ID
STB32N65M5
710 V
119 mΩ
24 A
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
D(2, TAB)
•
Switching applications
Description
G(1)
S(3)
AM01475v1_noZen
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative
vertical process technology combined with the well-known PowerMESH™ horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
Product status link
STB32N65M5
Product summary
Order code
STB32N65M5
Marking
32N65M5
Package
D2PAK
Packing
Tape and reel
DS6032 - Rev 5 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB32N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
24
A
ID
Drain current (continuous) at TC = 100 °C
15
A
IDM (1)
Drain current (pulsed)
96
A
PTOT
Total power dissipation at TC = 25 °C
150
W
Peak diode recovery voltage slope
15
V/ns
-55 to 150
°C
Value
Unit
VGS
dv/dt (2)
Tj
Tstg
Parameter
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 24 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.83
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
30
°C/W
Value
Unit
8
A
650
mJ
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Table 3. Avalanche characteristics
Symbol
DS6032 - Rev 5
Parameter
IAR
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
page 2/17
STB32N65M5
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
ID = 1 mA, VGS = 0 V
Min.
Typ.
V
1
µA
100
µA
±100
nA
4
5
V
95
119
mΩ
Typ.
Max.
Unit
-
pF
VDS = 650 V, VGS = 0 V,
Zero gate voltage drain current
TC = 125 °C (1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 12 A
Unit
650
VDS = 650 V, VGS = 0 V,
IDSS
Max.
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Ciss
Parameter
Output capacitance
Crss
Reverse transfer capacitance
Co(er) (2)
Min.
Input capacitance
Coss
Co(tr) (1)
Test conditions
3320
VDS = 100 V, f = 1 MHz,
VGS = 0 V
75
5
Equivalent capacitance time related
Equivalent capacitance energy
related
-
VGS = 0 V, VDS = 0 to 520 V
Rg
Gate input resistance
f = 1 MHz, ID= 0 A
Qg
Total gate charge
VDD = 520 V, ID = 12 A,
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 15. Test circuit for
gate charge behavior)
-
210
-
pF
-
70
-
pF
-
2
-
Ω
-
nC
72
-
17
29
1. Co(tr) time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
2. Co(er) energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS.
Table 6. Switching times
Symbol
td(off)
Test conditions
Min.
Typ.
Turn-off delay time
VDD = 400 V, ID = 15 A,
53
Rise time
RG = 4.7 Ω, VGS = 10 V
12
tc
Cross time
tf
Fall time
(see Figure 16. Test circuit for
inductive load switching and
diode recovery times and
Figure 19. Switching time
waveform)
tr
DS6032 - Rev 5
Parameter
-
29
Max.
Unit
-
ns
16
page 3/17
STB32N65M5
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test conditions
Source-drain current
Min.
Typ.
24
-
ISDM (1)
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 24 A, VGS = 0 V
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 60 V (see
Figure 16. Test circuit for
inductive load switching and
diode recovery times)
trr
Reverse recovery time
ISD = 24 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
IRRM
Reverse recovery current
(see Figure 16. Test circuit for
inductive load switching and
diode recovery times)
96
-
-
-
Max.
1.5
Unit
A
V
375
ns
6
µC
33
A
440
ns
8
µC
36
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS6032 - Rev 5
page 4/17
STB32N65M5
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 2. Thermal impedance
Figure 1. Safe operating area
AM05448v1
K
GC20540_ZTH
δ=0.5
on
)
δ=0.2
S(
O
p
Li e ra
m
ite tio n
d
by in t
m h is
ax a
R D re a
is
ID
(A)
10
0.1
10µs
100µs
0.02
1ms
1
Single pulse
S inlge
puls e
10
1
0.01
10ms
Tj=150°C
Tc=25°C
0.1
0.1
0.05
10 -1
10
VDS (V)
100
-2
10-5
Figure 3. Output characterisics
10-3
10
-2
10 -1
tp(s)
Figure 4. Transfer characteristics
AM05451v1
ID
10-4
AM05452v1
ID
(A)
VGS =10V
VDS =20V
50
40
30
30
20
20
10
10
0
10
0
30
VDS
Figure 5. Gate charge vs gate-source voltage
AM05457v1
VGS
VDD=520V
12
DS
VDS
480
ID=12A
10
0
0
2
4
8
6
10
VGS (V)
Figure 6. Static drain-source on resistance
AM05454v1
R DS (on)
(Ω)
0.111
0.091
3
8
0.071
6
0.051
4
80
2
0
DS6032 - Rev 5
0
20
40
60
80
Qg
0.031
0.011
0
5
10
15
ID(A)
page 5/17
STB32N65M5
Electrical characteristics curves
Figure 7. Capacitance variations
Figure 8. Output capacitance stored energy
AM05455v1
C
(pF)
AM05456v1
E os s
(µJ )
14
10000
Cis s
12
10
1000
8
100
Cos s
6
4
10
Crs s
1
0.1
1
100
10
VDS (V)
Figure 9. Normalized gate threshold voltage vs
temperature
VGS (th)
(norm)
1.10
AM05459v1
ID = 250 μA
2
0
0
100
200 300
400
500
600
VDS (V)
Figure 10. Normalized on resistance vs temperature
AM05460v1
R DS (on)
(norm)
2.1
1.9
VGS = 10 V
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
25
0
50
75 100
TJ (°C)
Figure 11. Source-drain diode forward characteristics
AM05461v1
VS D
(V)
0.5
-50 -25
0
25
50
75 100
TJ (°C)
Figure 12. Normalized V(BR)DSS vs temperature
AM05453v1
V(BR)DSS
TJ =-50°C
1.2
1.0
ID = 1 mA
1.03
0.8
TJ =25°C
0.6
0.99
TJ =150°C
0.4
0.97
0.2
0
DS6032 - Rev 5
1.01
0.95
0
10
20
30
40
50 IS D(A)
3
-50
0
TJ
page 6/17
STB32N65M5
Electrical characteristics curves
Figure 13. Switching energy vs gate resistance
E
μJ )
400
AM05458v1
ID=15A
VCL=400V
VGS =10V
Eon
300
Eoff
200
100
0
0
10
20
30
40
R G (Ω
* Eon including reverse recovery of a SiC diode.
DS6032 - Rev 5
page 7/17
STB32N65M5
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
Figure 15. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
B
L
A
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 17. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Unclamped inductive waveform
V(BR)DSS
Figure 19. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay -off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t ))
VDD
VDD
10%Vds
10%Id
Vds
Trise
AM01472v1
DS6032 - Rev 5
Tfall
Tcross --over
AM05540v2
page 8/17
STB32N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS6032 - Rev 5
page 9/17
STB32N65M5
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) type A package outline
0079457_25
DS6032 - Rev 5
page 10/17
STB32N65M5
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS6032 - Rev 5
Typ.
0.40
0°
8°
page 11/17
STB32N65M5
D²PAK (TO-263) type A package information
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS6032 - Rev 5
page 12/17
STB32N65M5
D²PAK packing information
4.2
D²PAK packing information
Figure 22. D²PAK tape outline
DS6032 - Rev 5
page 13/17
STB32N65M5
D²PAK packing information
Figure 23. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape
Dim.
DS6032 - Rev 5
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 14/17
STB32N65M5
Revision history
Table 10. Document revision history
Date
Version
Changes
16-Jan-2009
1
First release
01-Sep-2009
2
Document status promoted from preliminary data to datasheet.
30-Sep-2009
3
Corrected VGS value on Table 2: Absolute maximum ratings
Co(er) and Co(tr) values changed in Table 5: Dynamic
Table 6: Switching times parameters updates
Figure 24: Switching time waveform has been corrected
Minor text changes
Section 4: Package mechanical data has been modified. Added:
– Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO-263)
drawing and Figure 26: D²PAK footprint;
06-Oct-2011
4
– Table 9: TO-220FP mechanical data, and Figure 27: TO-220FP drawing;
– Table 10: I²PAK (TO-262) mechanical data, and Figure 28: I²PAK (TO-262)
drawing;
– Table 11: TO-220 type A mechanical data, and Figure 29: TO-220 type A
drawing;
– Table 12: TO-247 mechanical data, and Figure 30: TO-247 drawing;
Section 5: Packaging mechanical data has been modified. Added:
– Table 13: D²PAK (TO-263) tape and reel mechanical data,
Figure 31: Tape and Figure 32: Reel;
02-Nov-2018
5
The part numbers STF32N65M5, STI32N65M5, STP32N65M5,
STW32N65M5 have been moved to a separate datasheet.
Content reworked to improve readability, no technical changes.
DS6032 - Rev 5
page 15/17
STB32N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
DS6032 - Rev 5
page 16/17
STB32N65M5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2018 STMicroelectronics – All rights reserved
DS6032 - Rev 5
page 17/17