STB33N60DM6

STB33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package Features TAB 2 3 1 D²PAK D(2, TAB) Order code VDS RDS(on) max. ID STB33N60DM6 600 V 128 mΩ 25 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications • S(3) Switching applications AM01476v1_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB33N60DM6 Product summary Order code STB33N60DM6 Marking 33N60DM6 Package D2PAK Packing Tape and reel DS12904 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STB33N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 25 A Drain current (continuous) at TC = 100 °C 16 A Drain current (pulsed) 80 A Total power dissipation at TC = 25 °C 190 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns (2) VGS ID IDM (1) PTOT Parameter Peak diode recovery current slope 1000 A/µs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns Tstg Storage temperature range -55 to 150 °C Value Unit di/dt Tj Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 25 A, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.66 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 30 °C/W Value Unit 1. When mounted on FR-4 board of 1 inch², 2oz Cu. Table 3. Avalanche characteristics Symbol DS12904 - Rev 2 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 360 mJ page 2/14 STB33N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current 1 µA 100 µA ±5 µA 4 4.75 V 115 128 mΩ Min. Typ. Max. Unit - 1500 - pF - 115 - pF - 3 - pF VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 12.5 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance (1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 225 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.8 - Ω Qg Total gate charge VDD = 480 V, ID = 25 A, - 35 - nC Qgs Gate-source charge VGS = 0 to 10 V - 10 - nC Qgd Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 15 - nC Coss eq. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12904 - Rev 2 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 12.5 A, - 14 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 9 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 7 - ns - 35 - ns Fall time page 3/14 STB33N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 25 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage VGS = 0 V, ISD = 25 A - 1.6 V trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, - 105 ns Qrr Reverse recovery charge VDD = 60 V - 0.47 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 9 A trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, - 210 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.68 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 16 A IRRM IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DS12904 - Rev 2 page 4/14 STB33N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Normalized thermal impedance Figure 1. Safe operating area GC20540 ID (A) GADG191220180852SOA Operation in this area is limited by RDS(on) tp = 1 μs 101 tp = 10 μs 100 tp = 100 μs Single pulse, TC = 25 °C, TJ ≤ 150 °C 10-1 10-2 10-1 100 tp = 1 ms 101 tp = 10 ms VDS (V) 102 Figure 3. Output characteristics ID (A) Figure 4. Transfer characteristics ID (A) GADG191220180852OCH VGS = 10 V VGS = 9 V 70 70 VGS = 8 V 60 50 40 40 VGS = 7 V 30 30 20 20 10 10 VGS = 6 V 0 0 4 8 12 16 VDS (V) 0 4 Figure 5. Gate charge vs gate-source voltage VDS (V) GADG191220180853QVG VDD = 480 V, ID = 25 A 600 8 Qgd 300 6 200 4 100 2 DS12904 - Rev 2 5 10 15 5 6 7 8 9 VGS (V) Figure 6. Capacitance variations C (pF) GADG191220180854CVR 10 4 10 VDS Qgs VGS (V) 12 Qg 500 0 0 VDS = 20 V 60 50 400 GADG191220180853TCH 20 25 30 35 0 Qg (nC) CISS 10 3 10 2 10 1 10 0 10 -1 COSS f = 1 MHz CRSS 10 0 10 1 10 2 VDS (V) page 5/14 STB33N60DM6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) GADG191220180855RID Figure 8. Normalized on-resistance vs temperature RDS(on) (norm.) 127 2.5 123 2.0 VGS = 10 V 119 1.0 111 0.5 5 10 15 20 25 ID (A) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG191220180856VTH 0.0 -75 -25 25 75 125 Tj (°C) Figure 10. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG191220180856BDV 1.10 1.1 ID = 1 mA 1.05 1.0 0.9 1.00 ID = 250 µA 0.95 0.8 0.90 0.7 0.6 -75 VGS = 10 V 1.5 115 107 0 GADG191220180856RON -25 25 75 125 Tj (°C) Figure 11. Output capacitance stored energy EOSS (μJ) 14 GADG191220180857EOS 0.85 -75 -25 25 125 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG191220180856SDF 1.1 12 75 TJ = -50 °C 1.0 10 TJ = 25 °C 0.9 8 0.8 6 TJ = 150 °C 0.7 4 0.6 2 0 0 DS12904 - Rev 2 100 200 300 400 500 600 VDS (V) 0.5 0 5 10 15 20 25 ISD (A) page 6/14 STB33N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12904 - Rev 2 page 7/14 STB33N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A2 package information Figure 19. D²PAK (TO-263) type A2 package outline 0079457_A2_26 DS12904 - Rev 2 page 8/14 STB33N60DM6 D²PAK (TO-263) type A2 package information Table 8. D²PAK (TO-263) type A2 package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.70 8.90 9.10 E2 7.30 7.50 7.70 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.40 0° 8° Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint_26 DS12904 - Rev 2 page 9/14 STB33N60DM6 D²PAK packing information 4.2 D²PAK packing information Figure 21. D²PAK tape outline DS12904 - Rev 2 page 10/14 STB33N60DM6 D²PAK packing information Figure 22. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS12904 - Rev 2 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 11/14 STB33N60DM6 Revision history Table 10. Document revision history DS12904 - Rev 2 Date Version Changes 01-Feb-2019 1 First release. 02-Jul-2020 2 Updated Table 1. Absolute maximum ratings and Table 7. Source drain diode. page 12/14 STB33N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12904 - Rev 2 page 13/14 STB33N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12904 - Rev 2 page 14/14