STB33N65M2

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Features 7$% 7$% Order codes    72)3  ' 3$.   7$% RDS(on) max ID 650 V 0.14 Ω 24 A STB33N65M2 STF33N65M2 STP33N65M2 7$% VDS STI33N65M2 • Extremely low gate charge 72     • Excellent output capacitance (Coss) profile  • 100% avalanche tested ,3$. • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking STB33N65M2 STF33N65M2 Package Packaging D²PAK Tape and reel TO-220FP 33N65M2 STP33N65M2 TO-220 STI33N65M2 I²PAK December 2014 This is information on a product in full production. DocID027286 Rev 1 Tube 1/23 www.st.com Contents STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK, STB33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 TO-220FP, STF33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220, STP33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 I2PAK, STI33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID Parameter Drain current (pulsed) PTOT Total dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) dv/dt Tstg Tj V (1) A (1) A 24 15 IDM (2) (4) ± 25 24 Drain current (continuous) at TC = 100 °C dv/dt (3) Unit Gate-source voltage Drain current (continuous) at TC = 25 °C ID D2PAK, TO-220, TO-220FP I2PAK 15 96 A 190 Peak diode recovery voltage slope 15 MOSFET dv/dt ruggedness 50 34 W 2500 V V/ns Storage temperature - 55 to 150 °C Max. operating junction temperature 150 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 24 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 4. VDS ≤ 520 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max 0.66 Rthj-pcb(1) Thermal resistance junction-pcb max 30 Rthj-amb Thermal resistance junction-ambient max D2PAK TO-220FP TO-220 I2PAK 3.68 0.66 Unit °C/W °C/W 62.5 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50 V) 780 mJ DocID027286 Rev 1 3/23 23 Electrical characteristics 2 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ±10 µA 3 4 V 0.117 0.14 Ω Min. Typ. Max. Unit - 1790 - pF - 75 - pF - 2 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 12 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq(1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 520 V - 380 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5 - Ω Qg Total gate charge - 41.5 - nC Qgs Gate-source charge - 6.8 - nC Qgd Gate-drain charge VDD = 520 V, ID = 24 A, VGS = 10 V (see Figure 17) - 18 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/23 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 325 V, ID = 12 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and Figure 21) Fall time DocID027286 Rev 1 Min. Typ. Max. Unit - 13.5 - ns - 11.5 - ns - 72.5 - ns - 9 - ns STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 24 A ISDM (1) Source-drain current (pulsed) - 96 A VSD (2) Forward on voltage - 1.6 V ISD trr VGS = 0 V, ISD = 24 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 24 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) ISD = 24 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) - 426 ns - 7 µC - 33.5 A - 544 ns - 10 µC - 36.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027286 Rev 1 5/23 23 Electrical characteristics 2.1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D2PAK and I2PAK ,' $  $0Y į   —V —V R Q  &* .  2 /LP SHUD LWH WLRQ G LQ E\ W P KLV D[ D 5 UH D '6 LV  Figure 3. Thermal impedance for TO-220, D2PAK and I2PAK į  PV PV 7M ƒ& 7F ƒ& 6LQJOHSXOVH į  =WK N5WKM& į WSϨ  į  į  į  WS 6,1*/(38/6(       9'69 Figure 4. Safe operating area for TO-220FP ,' $ $0Y Ϩ      WSV  Figure 5. Thermal impedance for TO-220FP &* . į  LV D H DU  į  —V Q LV 6R W K 5 ' LQ D[ Q LR \P W UD E  SH HG 2 LPLW / į  —V PV  = =WKWK N5 N5WKM& WKM& į į W WSSϨ Ϩ PV 7M ƒ& 7F ƒ& 6LQJOHSXOVH  į  į  į  WS Ϩ Ϩ 6,1*/(38/6(      9'69 Figure 6. Output characteristics ,'$ $0Y      WSV  Figure 7. Transfer characteristics ,' $ $0Y 9*6 9  9'6 9  9     9       6/23  9       9'69 DocID027286 Rev 1        9*69 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Figure 8. Gate charge vs gate-source voltage 9*6 9 $0Y 9'6 9  9'6  9'' 9 ,' $  Electrical characteristics Figure 9. Static drain-source on-resistance 5'6RQ ȍ                               4JQ& Figure 10. Capacitance variations 9*6 9           ,'$ Figure 11. Output capacitance stored energy (266 —-  $0Y & S) $0Y  $0Y  &LVV     &RVV      &UVV    9'69 Figure 12. Normalized gate threshold voltage vs temperature 9*6WK QRUP $0Y ,' —$           9'69 Figure 13. Normalized on-resistance vs temperature 5'6RQ QRUP $0Y          ,' $       7-ƒ&   DocID027286 Rev 1     7-ƒ& 7/23 23 Electrical characteristics STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Figure 14. Source-drain diode forward characteristics 96' 9  $0Y Figure 15. Normalized V(BR)DSS vs temperature 9%5'66 QRUP $0Y  7- ƒ&   ,' P$ 7- ƒ&   7- ƒ&      8/23        ,6'$   DocID027286 Rev 1     7-ƒ& STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit 9'' 9 μF VDD VD VGS RG Nȍ Q) 3.3 μF 2200 RL Nȍ ,* &2167 9L 9 9*0$;  P) D.U.T. ȍ '87 Nȍ 9* PW Nȍ Nȍ 3: $0Y AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B S VD L=100μH 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform WRQ 9%5'66 WGRQ 9' WU WGRII WI   ,'0    ,' 9'' WRII 9'' 9'6  9*6 $0Y  DocID027286 Rev 1  $0Y 9/23 23 Package mechanical data 4 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK, STB33N65M2 Figure 22. D²PAK (TO-263) drawing B9 10/23 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID027286 Rev 1 11/23 23 Package mechanical data STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Figure 23. D²PAK footprint (dimensions in mm) )RRWSULQW 12/23 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 4.2 Package mechanical data TO-220FP, STF33N65M2 Figure 24. TO-220FP drawing 7012510_Rev_K_B DocID027286 Rev 1 13/23 23 Package mechanical data STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Table 10. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/23 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 4.3 Package mechanical data TO-220, STP33N65M2 Figure 25. TO-220 type A drawing BW\SH$B5HYB7 DocID027286 Rev 1 15/23 23 Package mechanical data STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 4.4 Package mechanical data I2PAK, STI33N65M2 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H DocID027286 Rev 1 17/23 23 Package mechanical data STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Table 12. I²PAK (TO-262) mechanical data mm. DIM. min. 18/23 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 5 Packaging mechanical data Packaging mechanical data Figure 27. Tape for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID027286 Rev 1 19/23 23 Packaging mechanical data STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Figure 28. Reel for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 20/23 DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027286 Rev 1 Min. Max. 330 13.2 26.4 30.4 21/23 23 Revision history 6 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Revision history Table 14. Document revision history 22/23 Date Revision 10-Dec-2014 1 Changes First release. DocID027286 Rev 1 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID027286 Rev 1 23/23 23