STB42N65M5, STF42N65M5, STI42N65M5
STP42N65M5, STW42N65M5
Datasheet
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK,
TO-220FP, I²PAK, TO-220 and TO-247 packages
Features
TAB
Order codes
3
1
1
2
D PAK
2
3
TO-220FP
TAB
12
3
TAB
1
2
3
TO-220
1
2
3
TO-247
D(2, TAB)
RDS(on) max.
ID
Package
STB42N65M5
D²PAK
STF42N65M5
TO-220FP
STI42N65M5
I2PAK
VDS @ TJmax
710 V
79 mΩ
33 A
I²PAK
STP42N65M5
TO-220
STW42N65M5
TO-247
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
•
Switching applications
Description
G(1)
S(3)
AM01475v1_noZen
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting products offer extremely low on-resistance, making them
particularly suitable for applications requiring high power and superior efficiency.
Product status
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
DS6033 - Rev 4 - May 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
VGS
ID
Parameter
D²PAK, I²PAK,
TO-220, TO-247
Gate-source voltage
TO-220FP
±25
Drain current (continuous) at TC = 25 °C
V
33(1)
33
Unit
A
Drain current (continuous) at TC = 100 °C
20.8
IDM(2)
Drain current (pulsed)
132
132
A
PTOT
Total power dissipation at TC = 25 °C
190
40
W
dv/dt(3)
VISO
Tj
Tstg
Peak diode recovery voltage slope
20.8
(1)
15
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
V/ns
2500
Operating junction temperature range
V
-55 to 150
Storage temperature range
A
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 33 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance
junction-case
Rthj-amb
Thermal resistance
junction-ambient
Rthj-pcb (1)
Thermal resistance
junction-pcb
Value
D²PAK
I²PAK
TO-220
TO-247
0.66
62.5
50
30
TO-220FP
Unit
3.1
°C/W
62.5
°C/W
°C/W
1. When mounted on an 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS6033 - Rev 4
Parameter
Avalanche current, repetitive or non-repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
11
A
950
mJ
page 2/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
ID = 1 mA, VGS = 0 V
Min.
Typ.
650
Zero gate voltage drain current
1
µA
100
µA
100
nA
4
5
V
70
79
mΩ
Typ.
Max.
Unit
-
pF
VGS = 0 V, VDS = 650 V,
TC = 125 °C (1)
IGSS
Gate body leakage current
VGS = ±25 V, VDS= 0 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on- resistance
VGS = 10 V, ID = 16.5 A
3
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Equivalent capacitance time
related
Co(er) (2)
Equivalent capacitance
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Min.
4650
-
110
3.2
-
100
-
285
-
1.1
-
98
-
VDS = 0 to 520 V, VGS = 0 V
pF
energy related
Rg
Gate input resistance
f = 1 MHz, ID = 0 A
Qg
Total gate charge
VDD = 520 V, ID = 33 A,
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 20. Test circuit for gate
charge behavior)
-
-
28
39
-
Ω
nC
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times
Symbol
Test conditions
Min.
Typ.
td(v)
Voltage delay time
VDD = 400 V, ID = 20 A,
52
tr(v)
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
8.4
tf(i)
Current fall time
(see Figure 21. Test circuit for
inductive load switching and diode
recovery times and
Figure 24. Switching time
waveform)
tc(off)
DS6033 - Rev 4
Parameter
Crossing time
-
8.7
Max.
Unit
-
ns
14
page 3/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
Parameter
Test conditions
Max.
Unit
33
-
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 33 A, VGS = 0 V
trr
Reverse recovery time
ISD = 33 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 100 V
Reverse recovery current
(see Figure 21. Test circuit for
inductive load switching and diode
recovery times)
trr
Reverse recovery time
ISD = 33 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 100 V, Tj = 150 °C
Reverse recovery current
(see Figure 21. Test circuit for
inductive load switching and diode
recovery times)
IRRM
Typ.
Source-drain current
ISDM(1)
IRRM
Min.
132
-
-
-
1.5
A
V
400
ns
7
μC
35
A
532
ns
10
μC
38
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS6033 - Rev 4
page 4/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for D²PAK, I²PAK, TO-220
Figure 2. Thermal impedance for D²PAK, I²PAK, TO-220
AM01565v1
ID
(A)
S(
o
n)
O
p
Li era
m tio
ite n
d
by in th
m is
ax ar
RD ea
is
100
10
10µs
100µs
1ms
10ms
1
0.1
0.1
10
1
100
VDS(V)
Figure 3. Safe operating area for TO-247
Figure 4. Thermal impedance for TO-247
AM03246v1
ID
(A)
on
)
10µs
S(
O
p
Li era
m tio
ite n
d
by in th
m is
ax ar
RD ea
is
100
10
100µs
1ms
10ms
1
0.1
0.1
10
1
100
VDS(V)
Figure 5. Safe operating area for TO-220FP
AM01566v1
ID
(A)
Figure 6. Thermal impedance for TO-220FP
GC20521
K
δ=0.5
0.2
100
is
rea
10
1
n)
s a DS(o
hi
nt xR
n i ma
o
i
t
y
era d b
Op mite
Li
10-1
0.1
10µs
0.05
0.02
0.01
100µs
1ms
10ms
10-2
Zth= K*R thJ-c
δ =t p/Ƭ
Single pulse
0.1
0.01
0.1
DS6033 - Rev 4
1
10
100
VDS(V)
10-3
10-4
tp
10-3
10-2
10-1
Ƭ
10-0
tp(s)
page 5/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics (curves)
Figure 7. Output characteristics
ID
(A)
Figure 8. Transfer characteristics
ID
(A)
AM01589V1
VGS = 9, 10 V
100
VGS =8 V
80
60
60
VGS =7 V
20
VDS = 15 V
100
80
40
AM01590V1
40
20
0
0
2
4
6
8
10
12
14
VGS =6 V
VDS (V)
Figure 9. Gate charge vs gate-source voltage
0
4
RDS(on)
(mΩ)
12
76
10
74
400
8
72
300
6
70
200
4
68
100
2
66
AM01569V1 VGS
VDD = 520 V
ID = 33 A
600
VDS
500
0
0
20
40
60
80
100
120
0
Qg (nC)
7
8
9
VGS (V)
AM01568V1
VGS = 10 V
64
0
5
10
15
20
25
30
ID (A)
Figure 12. Output capacitance stored energy
Figure 11. Capacitance variations
AM01570v1
C
(pF)
6
Figure 10. Static drain-source on-resistance
(V)
VDS
(V)
5
10000
AM03231v1
Eoss
(µJ)
16
Ciss
1000
14
12
10
100
Coss
8
6
10
4
Crss
1
DS6033 - Rev 4
1
10
100
VDS(V)
2
0
0
100
200
300
400
500
600
VDS(V)
page 6/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm.)
Figure 14. Normalized on-resistance vs temperature
RDS(on)
(norm.)
AM01571V1
ID = 250 μA
1.1
AM01573V1
VGS = 10 V
2.5
2.0
1.0
1.5
0.9
1.0
0.8
0.5
0.7
0.6
-75
-25
25
75
0.0
-75
TJ (°C)
125
Figure 15. Source-drain diode forward characteristics
AM01574v1
VSD
(V)
1.0
-25
75
V(BR)DSS
(norm.)
TJ=-25°C
125
TJ (°C)
Figure 16. Normalized V(BR)DSS vs temperature
AM01572V1
1.12
ID = 1 mA
0.9
1.08
0.8
1.04
0.7
0.6
TJ=25°C
0.5
1.00
TJ=150°C
0.96
0.4
0.92
0.3
0.2
25
0
5
10
15
20
25
30
0.88
-75
ISD(A)
-25
25
75
125
TJ (°C)
Figure 17. Switching energy vs gate resistance
E
(µJ)
600
500
AM01575v1
ID=20A
VDD=400V
L=50µH
Eon
400
300
Eoff
200
100
0
Note:
DS6033 - Rev 4
0
5
10
15 20 25 30 35 40 45 RG(W)
Eon including reverse recovery of a SiC diode.
page 7/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Test circuits
3
Test circuits
Figure 19. Test circuit for resistive load switching times
Figure 20. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 21. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
B
L
A
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 22. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 23. Unclamped inductive waveform
V(BR)DSS
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay -off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t ))
VDD
VDD
10%Vds
10%Id
Vds
Trise
AM01472v1
DS6033 - Rev 4
Tfall
Tcross --over
AM05540v2
page 8/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS6033 - Rev 4
page 9/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
D²PAK (TO-263) type A2 package information
4.1
D²PAK (TO-263) type A2 package information
Figure 25. D²PAK (TO-263) type A2 package outline
0079457_A2_26
DS6033 - Rev 4
page 10/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
D²PAK (TO-263) type A2 package information
Table 8. D²PAK (TO-263) type A2 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.40
0°
8°
Figure 26. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS6033 - Rev 4
page 11/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
D²PAK packing information
4.2
D²PAK packing information
Figure 27. D²PAK tape outline
DS6033 - Rev 4
page 12/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
D²PAK packing information
Figure 28. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape
Dim.
DS6033 - Rev 4
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 13/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-220FP package information
4.3
TO-220FP package information
Figure 29. TO-220FP package outline
7012510_Rev_12_B
DS6033 - Rev 4
page 14/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-220FP package information
Table 10. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS6033 - Rev 4
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 15/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
I²PAK package information
4.4
I²PAK package information
Figure 30. I²PAK package outline
0004982_Rev_H
DS6033 - Rev 4
page 16/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
I²PAK package information
Table 11. I²PAK package mechanical data
Dim.
DS6033 - Rev 4
mm
Min.
Typ.
Max.
A
4.40
-
4.60
A1
2.40
-
2.72
b
0.61
-
0.88
b1
1.14
-
1.70
c
0.49
-
0.70
c2
1.23
-
1.32
D
8.95
-
9.35
e
2.40
-
2.70
e1
4.95
-
5.15
E
10
-
10.40
L
13
-
14
L1
3.50
-
3.93
L2
1.27
-
1.40
page 17/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-220 type A package information
4.5
TO-220 type A package information
Figure 31. TO-220 type A package outline
0015988_typeA_Rev_22
DS6033 - Rev 4
page 18/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-220 type A package information
Table 12. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS6033 - Rev 4
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 19/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-247 package information
4.6
TO-247 package information
Figure 32. TO-247 package outline
0075325_9
DS6033 - Rev 4
page 20/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
TO-247 package information
Table 13. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
DS6033 - Rev 4
Typ.
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
page 21/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Ordering information
5
Ordering information
Table 14. Order codes
Order code
Package
Packing
STB42N65M5
D²PAK
Tape and reel
STF42N65M5
TO-220FP
STI42N65M5
DS6033 - Rev 4
Marking
42N65M5
I²PAK
STP42N65M5
TO-220
STW42N65M5
TO-247
Tube
page 22/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Revision history
Table 15. Document revision history
Date
Version
Changes
16-Jan-2009
1
First release.
15-May-2009
2
Updated figures 9, 10, 11 and 17
12-Jun-2009
3
Figure 15 has been updated
Modified features and description on cover page.
02-May-2019
4
Updated Section 4 Package information.
Minor text changes.
DS6033 - Rev 4
page 23/25
STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5
4.1
D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.6
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
DS6033 - Rev 4
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STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5
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© 2019 STMicroelectronics – All rights reserved
DS6033 - Rev 4
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