STB43N60DM2

STB43N60DM2 N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data Features Order code VDS @ TJmax. RDS(on) max. ID PTOT STB43N60DM2 650 V 0.093 Ω 34 A 250 W TAB • • 3 1 • • • • D2PAK Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB43N60DM2 43N60DM2 D²PAK Tape and reel July 2015 DocID028058 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents STB43N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 D²PAK (TO-263) type A package information ................................... 9 4.2 D²PAK packing information ............................................................. 12 Revision history ............................................................................ 14 DocID028058 Rev 1 STB43N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS ID (1) IDM PTOT Parameter Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 34 Drain current (continuous) at Tcase = 100 °C 21 Drain current (pulsed) 136 A W Total dissipation at Tcase = 25 °C 250 dv/dt (2) Peak diode recovery voltage slope 50 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature Tj Operating junction temperature A V/ns -55 to 150 °C Value Unit Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 34 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.50 Thermal resistance junction-pcb 30 Rthj-pcb (1) °C/W Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol IAR (1) EAS Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy Value Unit 6 A 800 mJ Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V. DocID028058 Rev 1 3/15 Electrical characteristics 2 STB43N60DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 ±5 µA 4 5 V 0.085 0.093 Ω Min. Typ. Max. Unit - 2500 - - 120 - - 3 - IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 17 A 3 µA Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 200 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4 - Ω Qg Total gate charge - 56 - Qgs Gate-source charge - 13 - Qgd Gate-drain charge VDD = 480 V, ID = 34 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 30 - Coss eq. (1) nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. VDD = 300 V, ID = 25 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 29 - - 27 - - 85 - - 6 - DocID028058 Rev 1 Unit ns STB43N60DM2 Electrical characteristics Table 8: Source-drain diode Symbol ISD (1) ISDM (2) VSD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 34 A Source-drain current (pulsed) - 136 A - 1.6 V Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM VGS = 0 V, ISD = 34 A - 120 ns - 0.6 µC Reverse recovery current - 10.4 A trr Reverse recovery time - 240 ns Qrr Reverse recovery charge - 2.4 µC IRRM Reverse recovery current - 20.5 A ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") Notes: (1) (2) Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID028058 Rev 1 5/15 Electrical characteristics 2.1 STB43N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance GC20540 K δ=0.5 0.2 0.1 10 -1 0.05 0.02 Zth= K*Rthj-c δ= tp/Ƭ 0.01 Single pulse 10 -2 10 -5 6/15 10 -4 10 tp -3 10 -2 Ƭ 10 -1 tP(s) Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028058 Rev 1 STB43N60DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID028058 Rev 1 7/15 Test circuits 3 STB43N60DM2 Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform 8/15 DocID028058 Rev 1 STB43N60DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 20: D²PAK (TO-263) type A package outline 0079457_A_rev22 DocID028058 Rev 1 9/15 Package information STB43N60DM2 Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Typ. 0.4 0° DocID028058 Rev 1 8° STB43N60DM2 Package information Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm) DocID028058 Rev 1 11/15 Package information 4.2 STB43N60DM2 D²PAK packing information Figure 22: Tape 12/15 DocID028058 Rev 1 STB43N60DM2 Package information Figure 23: Reel T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 Max. 330 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID028058 Rev 1 26.4 30.4 13/15 Revision history 5 STB43N60DM2 Revision history Table 11: Document revision history 14/15 Date Revision 02-Jul-2015 1 DocID028058 Rev 1 Changes Initial release. STB43N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID028058 Rev 1 15/15