STB57N65M5, STF57N65M5, STI57N65M5,
STP57N65M5
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET
in I²PAK, TO-220, TO-220FP and D²PAK packages
Datasheet — production data
Features
TAB
Order codes
VDSS @
TJmax
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
RDS(on)
max
ID
3
1
3
D²PAK
710 V
< 0.063 Ω
TO-220FP
42 A
TAB
■
Worldwide best RDS(on)*area amongst the
silicon based devices
■
Higher VDSS rating, high dv/dt capability
■
Excellent switching performance
■
Easy to drive, 100% avalanche tested
2
1
TAB
3
12
3
1
I²PAK
Figure 1.
2
TO-220
Internal schematic diagram
Applications
■
$4!"
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
'
3
!-V
Device summary
Order codes
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
December 2012
This is information on a product in full production.
Marking
Packages
Packaging
57N65M5
D²PAK
TO-220FP
I²PAK
TO-220
Tape and reel
Tube
Tube
Tube
Doc ID 022849 Rev 4
1/22
www.st.com
22
Contents
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/22
.............................................. 9
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220,
D²PAK, I²PAK
VGS
ID
ID
IDM
(2)
PTOT
Gate- source voltage
TO-220FP
± 25
Drain current (continuous) at TC = 25 °C
42
Drain current (continuous) at TC = 100 °C
42
26.5
Drain current (pulsed)
168
Total dissipation at TC = 25 °C
250
V
(1)
A
26.5
(1)
A
168
(1)
A
40
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
11
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
960
mJ
Peak diode recovery voltage slope
15
V/ns
dv/dt (3)
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
Max. operating junction temperature
V
-55 to 150
°C
150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 42 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Rthj-pcb
Thermal resistance junction-pcb
max(1)
D²PAK I²PAK TO-220
TO-220FP
0.50
3.1
°C/W
62.5
°C/W
62.5
30
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Doc ID 022849 Rev 4
3/22
Electrical characteristics
2
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
650
V
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±100
nA
4
5
V
0.056
0.063
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on
Static drain-source onVGS = 10 V, ID = 21 A
resistance
Table 5.
Symbol
3
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
4200
115
9
-
pF
pF
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
93
-
pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
303
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 21 A,
VGS = 10 V
(see Figure 18)
-
98
23
40
-
nC
nC
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Table 6.
Symbol
td(V)
tr(V)
tf(i)
tc(off)
Table 7.
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 28 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
73
15
12
19
Min.
Typ.
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
42
168
A
A
ISD = 42 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 19)
-
418
8
40
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 19)
-
528
12
44
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022849 Rev 4
5/22
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D²PAK,
I²PAK and TO-220
Figure 3.
Thermal impedance for D²PAK,
I²PAK and TO-220
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Transfer characteristics
AM14703v1
ID
(A)
100
is
ea )
ar S(on
is
th RD
in ax
n
it o y m
b
ra
pe ed
O mit
i
L
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
1
10ms
Single
pulse
0.1
0.1
Figure 4.
1
10
VDS(V)
100
Safe operating area for TO-220FP
AM14704v1
ID
(A)
100
is
ea )
ar (on
s DS
i
th x R
in
n ma
tio by
a
r d
pe te
O imi
L
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
Figure 6.
ID
(A)
1
10
VDS(V)
100
Output characteristics
AM14706v1
VGS= 9, 10 V
100
80
VGS= 7 V
60
60
40
40
VGS= 6 V
20
6/22
VDS= 25 V
100
VGS= 8 V
80
0
0
AM14707v1
ID
(A)
4
8
12
16
20
VDS(V)
0
3
Doc ID 022849 Rev 4
4
5
6
7
8
9 VGS(V)
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM14708v1
VGS
(V)
VDS
(V)
500
VDD=520V
10
ID=21A
VDS
8
400
6
300
Static drain-source on-resistance
AM14709v1
RDS(on)
(Ω)
0.062
VGS=10V
0.060
0.058
0.056
4
200
2
100
0
0
40
20
60
0
100 Qg(nC)
80
Figure 10. Capacitance variations
0.052
0.05
0
20
10
30
ID(A)
Figure 11. Output capacitance stored energy
AM14710v1
C
(pF)
0.054
AM14711v1
Eoss
(µJ)
18
16
10000
Ciss
1000
14
12
10
100
Coss
8
Crss
4
6
10
2
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage
vs temperature
AM05459v1
VGS(th)
(norm)
1.10
0
0
VDS(V)
ID = 250 µA
100
400 500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM05460v1
RDS(on)
(norm)
2.1
1.9
1.00
200 300
VGS= 10V
ID= 21 A
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 022849 Rev 4
0
25
50
75 100
TJ(°C)
7/22
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM05461v1
VSD
(V)
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
30
20
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs gate resistance
(1)
AM14712v1
E (μJ)
800
Eon
VDD=400V
VGS=10V
ID=28A
600
Eoff
400
200
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/22
Doc ID 022849 Rev 4
0
25
50
75 100
TJ(°C)
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 21. Unclamped inductive waveform
V(BR)DSS
AM01471v1
Figure 22. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay-off
-off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t))
))
VDD
VDD
10%Id
10%Vds
Vds
Trise
AM01472v1
Doc ID 022849 Rev 4
Tfall
Tcross --over
AM05540v2
9/22
Package mechanical data
4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/22
Typ.
0.4
0°
8°
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Package mechanical data
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 022849 Rev 4
11/22
Package mechanical data
Table 9.
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/22
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Package mechanical data
Figure 25. TO-220FP drawing
7012510_Rev_K_B
Doc ID 022849 Rev 4
13/22
Package mechanical data
Table 10.
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
14/22
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Package mechanical data
Figure 26. I²PAK (TO-262) drawing
0004982_Rev_H
Doc ID 022849 Rev 4
15/22
Package mechanical data
Table 11.
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/22
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Package mechanical data
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 022849 Rev 4
17/22
Packaging mechanical data
5
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Packaging mechanical data
Table 12.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/22
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 022849 Rev 4
Max.
330
13.2
26.4
30.4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Packaging mechanical data
Figure 28. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Doc ID 022849 Rev 4
19/22
Packaging mechanical data
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
20/22
Doc ID 022849 Rev 4
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
6
Revision history
Revision history
Table 13.
Document revision history
Date
Revision
Changes
06-Apr-2012
1
First release.
04-Jul-2012
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
21-Aug-2012
3
Updated symbols and parameters in Table 6: Switching times.
Minor text change on the cover page.
04-Dec-2012
4
The part number STW57N65M5 has been moved to a separate
datasheet.
Doc ID 022849 Rev 4
21/22
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
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22/22
Doc ID 022849 Rev 4