STB60NH02LT4

STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE STB60NH02L ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 24 V < 0.0105 Ω 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION The STB60NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. ) (s ) s ( ct u d o 3 1 r P e D2PAK TO-263 (Suffix “T4”) t e l o s b O INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES t c u d o r P e t e l o Ordering Information SALES TYPE STB60NH02LT4 s b O MARKING B60NH02L PACKAGE TO-263 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj May 2004 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 60 43 240 70 0.47 280 Unit V V V V A A A W W/°C mJ -55 to 175 °C 1/11 STB60NH02L THERMAL DATA Rthj-case Rthj-amb Tl Max Max Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose °C/W °C/W °C 2.14 62.5 300 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = 20 V VDS = 20 V Gate-body Leakage Current (VDS = 0) VGS = ± 20V Min. Parameter Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 30 A ID = 15 A Symbol gfs (4) Forward Transconductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance RG 2/11 o r P Gate Input Resistance s b O Test Conditions t(s c u d e t e ol s b O )- Parameter VDS = 15 V 1 10 µA µA ±100 nA ) s ( ct ID = 25 A VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1 u d o Pr Min. e t e ol VGS(th) Unit V TC = 125°C Test Conditions DYNAMIC Max. 24 ON (4) Symbol Typ. Min. Typ. Max. Unit 1.8 2.5 V 0.0085 0.012 0.0105 0.020 Ω Ω Typ. Max. Unit 27 S 1400 400 55 pF pF pF 1 Ω STB60NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. td(on) tr Turn-on Delay Time Rise Time VDD = 10 V ID = 30 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 10 130 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10 V ID= 60 A VGS= 10 V 24 5 3.4 Output Charge VDS= 16 V 9.4 Qoss(5) VGS= 0 V Max. ns ns 32 td(off) tf Parameter Test Conditions VDD = 10 V ID = 30 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Turn-off Delay Time Fall Time ) s ( ct Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current c u d . . e t e ol Safe Operating Area t(s o r P Min. Max. Unit 27 16 21.6 ns ns Typ. Max. Unit 60 240 A A 1.3 V 48 48 ns nC A bs O ) ISD = 30 A Forward On Voltage (1) Garanted when external Rg=4.7 Ω and tf < tfmax. (2) Pulse width limited by safe operating area (3) Starting Tj = 25 oC, ID = 25A, VDD = 15V s b O Test Conditions Typ. u d o r P e t e l o SOURCE DRAIN DIODE VSD (4) Min. VGS = 0 ISD = 60 A di/dt = 100A/µs Tj = 150°C VDD = 18 V (see test circuit, Figure 5) nC nC nC nC SWITCHING OFF Symbol Unit 36 36 2 (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (5) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A Thermal Impedance 3/11 STB60NH02L Output Characteristics Transfer Characteristics ) s ( ct u d o r P e Transconductance Static Drain-source On Resistance t e l o ) (s s b O t c u d o r P e t e l o Gate Charge vs Gate-source Voltage s b O 4/11 Capacitance Variations STB60NH02L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature ) s ( ct u d o r P e Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature t e l o ) (s s b O t c u d o r P e . s b O t e l o . 5/11 STB60NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform ) s ( ct Fig. 3: Switching Times Test Circuits For Resistive Load ) (s t c u d o r P e t e l o Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times s b O 6/11 u d o r P e Fig. 4: Gate Charge test Circuit s b O t e l o STB60NH02L D2PAK MECHANICAL DATA mm. DIM. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 D 8.95 9.35 0.352 10.4 0.394 D1 0.368 8 E E1 r P e 8.5 G 4.88 5.28 L 15 15.85 1.27 1.4 L3 1.4 1.75 M 2.4 3.2 R 0.192 s ( t c 4° 0.208 0.050 t e l o 0.055 0.055 0.069 0.094 0.126 0.591 bs O ) 0.4 0° 0.409 0.334 L2 V2 u d o 0.315 10 ) s ( ct 0.054 0.624 0.015 0° 4° u d o r P e t e l o s b O 7/11 STB60NH02L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* ) s ( ct u d TAPE AND REEL SHIPMENT (suffix ”T4”)* o r P e t e l o s b O ) s ( t c u d o r P e REEL MECHANICAL DATA DIM. mm MIN. A B t e l o DIM. bs MAX. MIN. MAX. 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.161 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 8/11 inch MIN. A0 O mm 1.574 inch MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB60NH02L ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 9/11 STB60NH02L ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/11 s b O STB60NH02L ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 11/11