STB6N60M2

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order code TAB STB6N60M2 TAB 1 3 2 D PAK STD6N60M2 3 1 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A • Extremely low gate charge DPAK • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications Figure 1. Internal schematic diagram , TAB • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package D2PAK STB6N60M2 6N60M2 STD6N60M2 May 2016 This is information on a product in full production. Packing Tape and reel DPAK DocID024772 Rev 3 1/21 www.st.com Contents STB6N60M2, STD6N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D²PAK(TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 DPAK(TO-252) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID024772 Rev 3 STB6N60M2, STD6N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 4.5 A ID Drain current (continuous) at TC = 100 °C 2.9 A IDM (1) Drain current (pulsed) 18 A PTOT W VGS Parameter Total dissipation at TC = 25 °C 60 dv/dt (2) Peak diode recovery voltage slope 15 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Tj V/ns Storage temperature range -55 to 150 °C Operating junction temperature range 1. Pulse width limited by safe operating area 2. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Rthj-case Rthj-pcb Parameter Thermal resistance junction-case max Thermal resistance junction-pcb Unit D2PAK max(1) DPAK 2.08 30 °C/W 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD= 50 V) 86 mJ DocID024772 Rev 3 3/21 21 Electrical characteristics 2 STB6N60M2, STD6N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C(1) IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 600 V 1 µA 100 µA ±10 µA 3 4 V 1.06 1.2 Ω Min. Typ. Max. Unit - 232 - pF - 14 - pF - 0.7 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 2.25 A 1. Defined by design, not subject to production test Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 71 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 8.2 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge VDD = 480 V, ID = 4.5 A, VGS = 10 V (see Figure 16) - 4.2 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/21 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 20) Fall time DocID024772 Rev 3 Min. Typ. Max. Unit - 9.5 - ns - 7.4 - ns - 24 - ns - 22.5 - ns STB6N60M2, STD6N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4.5 A ISDM (1) Source-drain current (pulsed) - 18 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 4.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 17) ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 17) - 274 ns - 1.47 µC - 10.7 A - 376 ns - 1.96 µC - 10.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024772 Rev 3 5/21 21 Electrical characteristics 2.1 STB6N60M2, STD6N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK AM15885v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 10 1 0.1 100 VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK AM15875v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 10 1 0.1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM15876v1 ID (A) 8 VGS= 8, 9, 10 V VGS= 7 V 7 AM15877v1 ID (A) 8 VDS= 20 V 7 6 6 VGS= 6 V 5 5 4 4 3 3 VGS= 5 V 2 2 1 1 VGS= 4 V 0 0 6/21 5 10 15 0 20 VDS(V) DocID024772 Rev 3 0 2 4 6 8 10 VGS(V) STB6N60M2, STD6N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM15878v1 VDS VGS (V) 12 VDD = 480V ID = 4.5 A VDS 10 Figure 9. Static drain-source on-resistance (V) RDS(on) (Ω) 500 1.120 400 1.100 300 1.080 200 1.060 100 1.040 AM15879v1 VGS=10V 8 6 4 2 0 0 4 2 6 8 0 Qg(nC) Figure 10. Capacitance variations 0 1 2 4 3 ID(A) Figure 11. Normalized VDS vs temperature AM15880v1 C (pF) 1.020 AM15881v1 VDS (norm) ID =1 mA 1.11 1000 1.09 Ciss 1.07 1.05 100 1.03 10 Coss 1.01 Crss 0.97 0.99 1 0.95 0.1 0.1 100 10 1 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM15882v1 VGS(th) (norm) 0.93 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Normalized on-resistance vs temperature AM15883v1 RDS(on) (norm) VGS=10 V 2.3 1.1 ID=250 µA 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 -25 0.7 0.5 -50 -25 0 25 50 75 100 TJ(°C) DocID024772 Rev 3 0 25 50 75 100 TJ(°C) 7/21 21 Electrical characteristics STB6N60M2, STD6N60M2 Figure 14. Source-drain diode forward characteristics AM15884v1 VSD (V) 1.4 1.2 TJ=-50°C 1 0.8 0.6 TJ=150°C TJ=25°C 0.4 0.2 0 0 8/21 1 2 3 4 ISD(A) DocID024772 Rev 3 STB6N60M2, STD6N60M2 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST 2200 μF VD VGS RG 100Ω Vi=20V=VGMAX VDD D.U.T. VG 2.7kΩ D.U.T. 47kΩ PW 1kΩ PW AM01469v1 AM01468v1 Figure 17. est circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit L A A A VD D G D.U.T. FAST DIODE B B 2200 μF L=100μH S 3.3 μF B 25 Ω 1000 μF D 3.3 μF VDD ID VDD G Vi RG D.U.T. S Pw AM01471v1 AM01470v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID024772 Rev 3 10% AM01473v1 9/21 21 Package information 4 STB6N60M2, STD6N60M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID024772 Rev 3 STB6N60M2, STD6N60M2 4.1 Package information D²PAK(TO-263) package information Figure 21. D²PAK (TO-263) type A package outline B$BUHY DocID024772 Rev 3 11/21 21 Package information STB6N60M2, STD6N60M2 Table 9. D²PAK (TO-263) type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/21 Max. 0.4 0° 8° DocID024772 Rev 3 STB6N60M2, STD6N60M2 Package information Figure 22. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters DocID024772 Rev 3 13/21 21 Package information 4.2 STB6N60M2, STD6N60M2 DPAK(TO-252) package information Figure 23. DPAK (TO-252) type C outline B&B 14/21 DocID024772 Rev 3 STB6N60M2, STD6N60M2 Package information Table 10. DPAK (TO-252) type C package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 5.33 5.46 6.10 6.20 6.50 6.60 6.70 e 2.186 2.286 2.386 E1 4.70 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 1.25 L3 L4 0.51 BSC 0.60 0.80 L6 1.00 1.80 BSC Θ1 5° 7° 9° Θ2 5° 7° 9° V2 0° 8° DocID024772 Rev 3 15/21 21 Package information STB6N60M2, STD6N60M2 Figure 24. DPAK (TO-252) footprint (b) )35HY b. All dimensions are in millimeters 16/21 DocID024772 Rev 3 STB6N60M2, STD6N60M2 5 Packing information Packing information Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024772 Rev 3 Min. Max. 330 13.2 26.4 30.4 17/21 21 Packing information STB6N60M2, STD6N60M2 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/21 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024772 Rev 3 18.4 22.4 STB6N60M2, STD6N60M2 Packing information Figure 25. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID024772 Rev 3 19/21 21 Revision history 6 STB6N60M2, STD6N60M2 Revision history Table 13. Document revision history Date Revision Changes 11-Jun-2013 1 First release. 09-Jul-2013 2 – Minor text changes – Modified: Rthj-case value for D2PAK in table 3 Updated title, features and description. Updated Table 6: Dynamic and Table 8: Source drain diode. 30-May-2016 3 Updated Section 4: Package information and Section 5: Packing information. Minor text changes. 20/21 DocID024772 Rev 3 STB6N60M2, STD6N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID024772 Rev 3 21/21 21