STB76NF80

STB76NF80 N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET Features Type VDSS STB76NF80 80 V RDS(on) max ID < 0.011 Ω 80 A(1) 1. Current limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 1 D²PAK Application ■ Switching applications – Automotive Description Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram $4!"OR ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB76NF80 B76NF80 D²PAK Tape and reel March 2010 Doc ID 17290 Rev 1 1/13 www.st.com 13 Contents STB76NF80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 17290 Rev 1 STB76NF80 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 80 V ± 20 V (1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC=100 °C 70 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C 12 V/ns Single pulse avalanche energy 700 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit ID IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope EAS (4) TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max 0.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose (1) 300 °C 1. 1.6mm from case for 10 sec Doc ID 17290 Rev 1 3/13 Electrical characteristics 2 STB76NF80 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS= VGS , ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A V(BR)DSS Table 5. Symbol Typ. Max. 80 2 Unit V 3 1 10 µA µA ±100 nA 4 V 0.0095 0.011 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 40 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 730 240 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V - 117 27 47 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4/13 Min. Doc ID 17290 Rev 1 160 nC nC nC STB76NF80 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD VDD= 37.5 V, ID= 45 A, RG=4.7 Ω, VGS=10 V Figure 14 on page 8 Min. Typ. Max. Unit - 25 100 66 30 - ns ns ns ns Min Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 80 A (1) Source-drain current (pulsed) - 320 A (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 16 on page 8 - ISDM VSD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions trr Qrr IRRM 132 660 10 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 17290 Rev 1 5/13 Electrical characteristics STB76NF80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 17290 Rev 1 STB76NF80 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 17290 Rev 1 7/13 Test circuits 3 STB76NF80 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/13 Doc ID 17290 Rev 1 AM01471v1 STB76NF80 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17290 Rev 1 9/13 Package mechanical data STB76NF80 D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 10/13 Min Doc ID 17290 Rev 1 8° STB76NF80 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 17290 Rev 1 11/13 Revision history 6 STB76NF80 Revision history Table 8. 12/13 Document revision history Date Revision 24-Mar-2010 1 Changes Initial release Doc ID 17290 Rev 1 STB76NF80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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