STB80NF55-08AG

STB80NF55-08AG, STP80NF55-08AG Automotive-grade N-channel 55 V, 6.5 mΩ typ.,80 A STripFET™ Power MOSFETs in D²PAK and TO-220 packages Datasheet — production data Features Order code VDSS RDS(on) max ID 55 V 8 mΩ 80 A TAB TAB STB80NF55-08AG STP80NF55-08AG 1 3 1 D2PAK 2 3 TO-220 • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram Applications • Switching applications '7$% Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. * 6 $0Y Table 1. Device summary Order code Marking Packages Packing STB80NF55-08AG B80NF55-08 D²PAK Tape and reel STP80NF55-08AG P80NF55-08 TO-220 Tube September 2016 This is information on a product in full production. DocID029701 Rev 1 1/18 www.st.com Contents STB80NF55-08AG, STP80NF55-08AG Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/18 DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 55 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W - 55 to 175 °C IDM (2) PTOT Tstg Tj Operating junction temperature range Storage temperature range 1. Current limited package 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient TO-220 0.5 °C/W 35(1) °C/W 62.5 °C/W 1. When mounted on 1 inch2 FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR, VDD = 30 V) DocID029701 Rev 1 Value Unit 40 A 1000 mJ 3/18 18 Electrical characteristics 2 STB80NF55-08AG, STP80NF55-08AG Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 μA Min. Typ. Max. 55 Unit V VGS = 0 V, VDS = 55 V 1 µA VGS = 0 V, VDS = 55 V, TC =125 °C (1) 10 µA ± 100 nA 3 4 V 6.5 8 mΩ IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS , ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 40 A 2 1. Defined by design, not subject to production test Table 6. Dynamic Symbol gfs 1. (1) Parameter Test conditions Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 15 V, ID = 18 A Min. Typ. - 40 Max. Unit - 3740 VGS = 0 V, VDS = 25 V, f = 1 MHz S pF - 830 - pF - 265 - pF - 112 155 nC - 20 - nC - 40 - nC Test conditions Min. Typ. VDD = 27 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (Figure 13: Switching times test circuit for resistive load and Figure 18: Switching time waveform.) - 20 - ns - 110 - ns - 75 - ns - 35 - ns VDD = 27 V, ID = 80 A, VGS = 10 V, (Figure 14: Gate charge test circuit) Pulsed: pulse duration=300 μs, duty cycle 1.5% Table 7. Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID029701 Rev 1 Max. Unit STB80NF55-08AG, STP80NF55-08AG Electrical characteristics Table 8. Source drain diode Symbol ISD ISDM (1) Parameter Test conditions Min Typ. Max. Unit Source-drain current - 80 A Source-drain current (pulsed) - 320 A 1.5 V VSD Forward on voltage ISD = 80 A, VGS = 0 V - trr(2) Reverse recovery time - 80 ns Qrr Reverse recovery charge - 230 nC IRRM Reverse recovery current ISD = 80 A, VDD = 25 V, di/dt = 100 A/µs Tj = 150 °C (Figure 15: Test circuit for inductive load switching and diode recovery times) - 5.7 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID029701 Rev 1 5/18 18 Electrical characteristics 2.1 STB80NF55-08AG, STP80NF55-08AG Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance 7RHK .   WSV Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized V(BR)DSS vs temperature Figure 7. Static drain-source on resistance 6/18 DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics HV31600 V SD (V) 1.1 Tj=-40°C 25°C 0.9 150°C 0.7 0.5 0.3 0 20 40 60 DocID029701 Rev 1 80 I SD (A) 7/18 18 Test circuits 3 STB80NF55-08AG, STP80NF55-08AG Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST 2200 μF VD VGS 100Ω Vi=20V=VGMAX VDD RG D.U.T. VG 2.7kΩ D.U.T. 47kΩ PW 1kΩ PW AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit L A A A VD D G D.U.T. FAST DIODE B B 2200 μF L=100μH S 3.3 μF B 25 Ω 1000 μF D 3.3 μF VDD ID VDD G Vi RG D.U.T. S Pw AM01471v1 AM01470v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton VD tdon tf 90% 10% 10% 0 ID VDS 90% VDD VGS 0 AM01472v1 8/18 tdoff 90% IDM VDD toff tr DocID029701 Rev 1 10% STB80NF55-08AG, STP80NF55-08AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK package information Figure 19. D²PAK (TO-263) type A package outline B$BUHY DocID029701 Rev 1 9/18 18 Package information STB80NF55-08AG, STP80NF55-08AG Table 9. D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/18 Max. 0.4 0° 8° DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG Package information Figure 20. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters DocID029701 Rev 1 11/18 18 Package information 4.2 STB80NF55-08AG, STP80NF55-08AG TO-220 type A package information Figure 21. TO-220 type A package outline BW\SH$B5HYB 12/18 DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG Package information Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID029701 Rev 1 13/18 18 Packing information 5 STB80NF55-08AG, STP80NF55-08AG Packing information Figure 22. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed 14/18 DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG Packing information Figure 23. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID029701 Rev 1 Min. Max. 330 13.2 26.4 30.4 15/18 18 Revision history 6 STB80NF55-08AG, STP80NF55-08AG Revision history Figure 24. Document revision history 16/18 Date Revision 07-Sep-2016 1 Changes First release DocID029701 Rev 1 STB80NF55-08AG, STP80NF55-08AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029701 Rev 1 17/18 18 STB80NF55-08AG, STP80NF55-08AG 18/18 DocID029701 Rev 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STP80NF55-08AG STB80NF55-08AG