STB8N65M5, STD8N65M5, STF8N65M5
Datasheet
N-channel 650 V, 0.56 Ω typ., 7 A MDmesh M5 Power MOSFETs in a D²PAK,
DPAK and TO-220FP packages
TAB
Features
TAB
2 3
1
2
1
3
Order codes
DPAK
VDS @ TJ max.
RDS(on) max.
ID
PTOT
2
D PAK
STB8N65M5
STD8N65M5
1
2
3
70 W
710 V
0.60 Ω
STF8N65M5
TO-220FP
D(2, TAB)
G(1)
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
7A
70 W
25 W
Applications
•
Switching applications
S(3)
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting products offer extremely low on-resistance, making them
particularly suitable for applications requiring high power and superior efficiency.
Product status links
STB8N65M5
STD8N65M5
STF8N65M5
DS6548 - Rev 6 - March 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
STB8N65M5, STD8N65M5, STF8N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VGS
Value
Parameter
D²PAK
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM
PTOT
dv/dt
(3)
VISO
TO-220FP
Unit
V
±25
ID
(2)
DPAK
7
7(1)
A
Drain current (continuous) at TC = 100 °C
4.4
4.4(1)
A
Drain current (pulsed)
28
28(1)
A
Total power dissipation at TC = 25 °C
70
25
W
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from all
three leads to external heat sink
V/ns
2500
V
(t = 1 s; TC = 25 °C)
Tj
Operating junction temperature range
Tstg
-55 to 150
Storage temperature range
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 7 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V.
Table 2. Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
RthJB
(1)
Thermal resistance, junction-to-board
Value
D²PAK
DPAK
1.79
30
TO-220FP
Unit
5
°C/W
62.5
°C/W
50
°C/W
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS6548 - Rev 6
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max.)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
D²PAK
DPAK
TO-220FP
Unit
2
A
120
mJ
page 2/27
STB8N65M5, STD8N65M5, STF8N65M5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test condition
Drain-source breakdown voltage
Min.
ID = 1 mA, VGS = 0 V
Typ.
650
Zero gate voltage drain current
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 3.5 A
VGS = 0 V, VDS = 650 V, TC = 125
1
µA
100
µA
±100
nA
4
5
V
0.56
0.60
Ω
Typ.
Max.
Unit
°C(1)
3
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
1. Specified by design, not tested in production.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Equivalent output capacitance
time related
Co(er) (2)
Equivalent output capacitance
energy related
Test condition
Min.
690
VDS = 100 V, f = 1 MHz, VGS = 0 V
pF
18
2
17
pF
52
pF
VDS = 0 to 520 V, VGS = 0 V
Rg
Gate input resistance
f = 1 MHz open drain
Qg
Total gate charge
VDD = 520 V, ID = 3.5 A,
15
Qgs
Gate-source charge
3.6
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 18. Test circuit for gate
charge behavior)
2
5
8
Ω
nC
6
1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated
value.
2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated
value.
Table 6. Switching times
Symbol
td(off)
DS6548 - Rev 6
Parameter
Test condition
Min.
Typ.
Max.
Turn-off delay time
VDD = 400 V, ID = 4 A,
-
50
-
tr(v)
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
-
14
-
tc(off)
Crossing time off
-
20
-
tf(i)
Current fall time
(see Figure 19. Test circuit for inductive
load switching and diode recovery times
and Figure 22. Switching time waveform)
-
11
-
Unit
ns
page 3/27
STB8N65M5, STD8N65M5, STF8N65M5
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
ISDM
(1)
VSD (2)
Parameter
Test condition
Min.
Typ.
Max.
Source-drain current
-
7
Source-drain current (pulsed)
-
28
1.5
Unit
A
Forward on voltage
ISD = 7 A, VGS = 0 V
-
trr
Reverse recovery time
ISD = 7 A, di/dt = 100 A/µs
-
200
ns
Qrr
Reverse recovery charge
-
1.6
μC
IRRM
Reverse recovery current
VDD = 100 V
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
16
A
trr
Reverse recovery time
ISD = 7 A, di/dt = 100 A/µs
-
263
ns
Qrr
Reverse recovery charge
-
1.9
μC
IRRM
Reverse recovery current
VDD = 100 V, TJ = 150 °C
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
15
A
V
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS6548 - Rev 6
page 4/27
STB8N65M5, STD8N65M5, STF8N65M5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for D²PAK
Figure 2. Thermal impedance for D²PAK
AM08194v1
ID
(A)
on
)
10µs
D
S(
O
Li p e r
m at
ite io
d ni
by n
m th is
ax a
R re a
is
10
1
100µs
1ms
Zth = k * RthJC
δ = tp / Ƭ
10ms
0.1
0.01
0.1
Tj=150°C
Tc=25°C
S ingle puls e
10
1
100
tp
Ƭ
VDS (V)
Figure 3. Safe operating area for DPAK
AM08195v1
10
10µs
)
on
D
S(
O
Li p e r
m at
ite io
d ni
by n
m th is
ax a
R re a
is
ID
(A)
Figure 4. Thermal impedance for DPAK
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
S ingle puls e
0.01
0.1
10
1
100
VDS (V)
Figure 5. Safe operating area for TO-220FP
AM08196v1
ID
(A)
)
on
100µs
1ms
DS6548 - Rev 6
Zth = k * RthJC
δ = tp / Ƭ
10-2
10ms
0.1
0.01
0.1
GC20940
10µs
D
1
K
10-1
S(
O
Li p e r
m at
ite io
d ni
by n
m th is
ax a
R re a
is
10
Figure 6. Thermal impedance for TO-220FP
Tj=150°C
Tc=25°C
S ingle puls e
1
10
100
10-3
VDS (V)
10-4
tp
Ƭ
10-3
10-2
10-1
100
tp (s)
page 5/27
STB8N65M5, STD8N65M5, STF8N65M5
Electrical characteristics (curves)
Figure 7. Output characterisics
Figure 8. Transfer characteristics
AM08197v1
ID (A)
12
VGS =10V
7.5V
VDS =20V
7V
10
10
6.5V
8
8
6
6
6V
4
2
0
4
2
5.5V
5
0
10
5V
VDS (V)
15
Figure 9. Gate charge vs gate-source voltage
AM03195v1
VDS
VGS
(V)
VDS
12
AM08198v1
ID (A)
12
(V)
VGS
VDD=520V
ID=3.5A
500
10
0
3
4
5
7
6
8
9
VGS (V)
Figure 10. Static drain-source on-resistance
AM08200v1
R DS (on)
(Ω)
VGS =10V
0.58
400
0.56
8
300
6
0.54
200
4
100
2
0
5
0
10
15
0
Q g (nC)
Figure 11. Capacitance variations
0.50
2
0
6
4
ID(A)
Figure 12. Output capacitance stored energy
AM08202v1
C
(pF)
0.52
AM08201v1
E os s
(µJ )
3.5
1000
Cis s
3.0
2.5
100
2.0
1.5
Cos s
10
Crs s
1
0.1
DS6548 - Rev 6
1
10
100
VDS (V)
1.0
0.5
0
0
100
200 300
400
500
600
VDS (V)
page 6/27
STB8N65M5, STD8N65M5, STF8N65M5
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs
temperature
AM08204v1
VGS (th)
(norm)
1.10
Figure 14. Normalized on-resistance vs temperature
AM08205v1
R DS (on)
(norm)
VGS =10V
ID=3.5A
ID=250 µA
2.0
1.00
1.5
0.90
1.0
0.80
0.70
-50 -25
0
25
50
75 100
TJ (°C)
Figure 15. Switching energy vs gate resistance
AM08206v1
E
(μJ )
0.5
-50 -25
0
25
50
75 100
TJ (°C)
Figure 16. Normalized V(BR)DSS vs temperature
AM10399v1
VDS
(norm)
ID=4A
VCL=400V
VGS =10V
1.08
Eoff
ID = 1mA
1.06
1.04
100
Eon
1.02
1.00
0.98
10
0.96
0.94
1
0
Note:
DS6548 - Rev 6
10
20
30
40
R G (Ω)
0.92
-50 -25
0
25
50
75 100
TJ (°C)
Eon including reverse recovery of a SiC diode.
page 7/27
STB8N65M5, STD8N65M5, STF8N65M5
Test circuits
3
Test circuits
Figure 18. Test circuit for gate charge behavior
Figure 17. Test circuit for resistive load switching times
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 20. Unclamped inductive load test circuit
Figure 19. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
A
B
B
B
L
100 µH
fast
diode
3.3
µF
D
G
+
RG
VD
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
_
D.U.T.
Vi
pulse width
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ID
V(BR)DSS
VDS
90%ID
90%VDS
VD
IDM
VGS
90%VGS
ID
VDD
VDD
10%VDS
10%ID
tr
VDS
td(V)
AM01472v1
DS6548 - Rev 6
tf
ID
tc(off)
AM05540v2
page 8/27
STB8N65M5, STD8N65M5, STF8N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
D²PAK (TO-263) type A package information
Figure 23. D²PAK (TO-263) type A package outline
0079457_26
DS6548 - Rev 6
page 9/27
STB8N65M5, STD8N65M5, STF8N65M5
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS6548 - Rev 6
Typ.
0.40
0°
8°
page 10/27
STB8N65M5, STD8N65M5, STF8N65M5
D²PAK (TO-263) type A package information
Figure 24. D²PAK (TO-263) recommended footprint (dimensions are in mm)
0079457_Rev26_footprint
DS6548 - Rev 6
page 11/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type A package information
4.2
DPAK (TO-252) type A package information
Figure 25. DPAK (TO-252) type A package outline
0068772_A_30
DS6548 - Rev 6
page 12/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type A package information
Table 9. DPAK (TO-252) type A mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS6548 - Rev 6
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 13/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type C package information
4.3
DPAK (TO-252) type C package information
Figure 26. DPAK (TO-252) type C package outline
0068772_C_30
DS6548 - Rev 6
page 14/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type C package information
Table 10. DPAK (TO-252) type C mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.25
E
6.50
E1
4.70
e
5.46
6.10
6.20
6.60
6.70
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
2.90 REF
0.90
L3
L4
1.25
0.51 BSC
0.60
L6
DS6548 - Rev 6
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 15/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type E package information
4.4
DPAK (TO-252) type E package information
Figure 27. DPAK (TO-252) type E package outline
0068772_typeE_rev.30
DS6548 - Rev 6
page 16/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type E package information
Table 11. DPAK (TO-252) type E mechanical data
Dim.
A
mm
Min.
Typ.
2.18
2.39
A2
0.13
b
0.65
0.884
b4
4.95
5.46
c
0.46
0.61
c2
0.46
0.60
D
5.97
6.22
D1
5.21
E
6.35
E1
4.32
6.73
e
2.286
e1
4.572
H
9.94
10.34
L
1.50
1.78
L1
L2
L4
DS6548 - Rev 6
Max.
2.74
0.89
1.27
1.02
page 17/27
STB8N65M5, STD8N65M5, STF8N65M5
DPAK (TO-252) type E package information
Figure 28. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_30
DS6548 - Rev 6
page 18/27
STB8N65M5, STD8N65M5, STF8N65M5
TO-220FP package information
4.5
TO-220FP package information
Figure 29. TO-220FP package outline
7012510_Rev_13_B
DS6548 - Rev 6
page 19/27
STB8N65M5, STD8N65M5, STF8N65M5
TO-220FP package information
Table 12. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
E
0.45
0.70
F
0.75
1.00
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.20
G1
2.40
2.70
H
10.00
10.40
L2
DS6548 - Rev 6
Typ.
16.00
L3
28.60
30.60
L4
9.80
10.60
L5
2.90
3.60
L6
15.90
16.40
L7
9.00
9.30
Dia
3.00
3.20
page 20/27
STB8N65M5, STD8N65M5, STF8N65M5
D²PAK and DPAK packing information
4.6
D²PAK and DPAK packing information
Figure 30. Tape outline
DS6548 - Rev 6
page 21/27
STB8N65M5, STD8N65M5, STF8N65M5
D²PAK and DPAK packing information
Figure 31. Reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 13. D²PAK tape and reel mechanical data
Tape
Dim.
DS6548 - Rev 6
Reel
mm
mm
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
330
13.2
26.4
30.4
page 22/27
STB8N65M5, STD8N65M5, STF8N65M5
D²PAK and DPAK packing information
Table 14. DPAK tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
B1
D
DS6548 - Rev 6
Reel
1.5
Min.
Max.
330
13.2
D1
1.5
G
16.4
E
1.65
1.85
N
50
18.4
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
22.4
page 23/27
STB8N65M5, STD8N65M5, STF8N65M5
Ordering information
5
Ordering information
Table 15. Order codes
Order codes
Marking
STB8N65M5
STD8N65M5
STF8N65M5
DS6548 - Rev 6
8N65M5
Package
Packing
D²PAK
Tape and reel
DPAK
Tape and reel
TO-220FP
Tube
page 24/27
STB8N65M5, STD8N65M5, STF8N65M5
Revision history
Table 16. Document revision history
Date
Revision
Changes
23-Oct-2009
1
First release.
14-Oct-2010
2
Document status promoted from preliminary data to datasheet.
05-Jul-2011
3
Table 7: Source drain diode has been updated.
– Updated: Figure 1, 10, 14 and 17.
04-Oct-2012
4
– Updated: note1 and 3 below the Table 2
– Updated the entire Section 4: Package mechanical data.
– Updated title and description on the cover page.
29-Oct-2012
5
– Updated Rg values in Table 5.
The part numbers STI8N65M5, STP8N65M5, STU8N65M5 have been moved
to a separate datasheet and the document has been updated accordingly.
03-Mar-2022
6
Modified Rg value in Table 5. Dynamic.
Updated Section 4 Package information.
Minor text changes.
DS6548 - Rev 6
page 25/27
STB8N65M5, STD8N65M5, STF8N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6
D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
DS6548 - Rev 6
page 26/27
STB8N65M5, STD8N65M5, STF8N65M5
IMPORTANT NOTICE – READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names
are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2022 STMicroelectronics – All rights reserved
DS6548 - Rev 6
page 27/27