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STBP120BVDK6F

STBP120BVDK6F

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    WFDFN10_EP

  • 描述:

    IC OVP W/THERMAL SHUTDOWN 10TDFN

  • 数据手册
  • 价格&库存
STBP120BVDK6F 数据手册
STBP120 Overvoltage protection device with thermal shutdown Features ■ Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch ■ Low RDS(on) of 90 mΩ ■ Integrated charge pump ■ Thermal shutdown protection ■ Softstart feature to control the inrush current ■ Enable input (EN) ■ Fault indication output (FLT) ■ IN input ESD withstand voltage up to ±15 kV (air discharge), up to ±8 kV (contact discharge) in typical application circuit with 1µF input capacitor (±2 kV HBM for standalone device) ■ ■ Certain overvoltage options compliant with the China Communications Standard YD/T 15912006 (overvoltage protection only) Small, RoHS compliant 2.5 x 2 mm TDFN – 10-lead package. September 2009 TDFN – 10-lead (2.5 x 2 mm) Applications ■ Smart phones ■ Digital cameras ■ PDA and palmtop devices ■ MP3 players ■ Low-power handheld devices. Doc ID15492 Rev 5 1/36 www.st.com 1 Contents STBP120 Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 2.1 Input (IN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Power output (OUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Fault indication output (FLT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 Enable input (EN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.5 No Connect (NC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.6 Ground (GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.1 Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.2 Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.3 Undervoltage lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.4 Overvoltage lockout (OVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3.5 Thermal shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 Calculating the power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 Calculating the junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 PCB layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8 Typical application performance (STBP120DVDK6F) . . . . . . . . . . . . . 19 9 Typical thermal characteristics (STBP120DVDK6F) . . . . . . . . . . . . . . . 24 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2/36 Doc ID 15492 Rev 5 STBP120 Contents 11 Tape and reel specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 12 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 13 Package marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Doc ID 15492 Rev 5 3/36 List of tables STBP120 List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. 4/36 Pin description and signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC and AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical data dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Carrier tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Further tape and reel information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reel dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Doc ID 15492 Rev 5 .....8 . . . . 13 . . . . 14 . . . . 15 . . . . 15 . . . . 29 . . . . 30 . . . . 30 . . . . 31 . . . . 33 . . . . 34 . . . . 35 STBP120 List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Typical application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum MOSFET current at TA = 85 °C for various PCB thermal performance and TJ = 125 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disable (EN = high). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 FLT behavior in disable (EN = high) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Startup delay, ton . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 FLT indication delay (OK), tstart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Output turn-off time, toff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 FLT indication delay (FAULT), tstop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disable time, tdis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Startup to overvoltage and startup VO(FLT) delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Startup inrush current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Output short-circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Output short-circuit detail . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 ICC vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 ICC(STDBY) vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 ICC(UVLO) at 2.9 V vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 VOVLO vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 VUVLO vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 VOL(FLT) at 1 mA vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 RDS(on) at 1 A vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Tape and reel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Reel dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Tape trailer/leader. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Pin 1 orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Doc ID15492 Rev 5 5/36 Description 1 STBP120 Description The STBP120 device provides overvoltage protection for input voltage up to +28 V. Its low RDS(on) N-channel MOSFET switch protects the systems connected to the OUT pin against failures of the DC power supplies in accordance with the China MII Communications Standard YD/T 1591-2006. In the event of an input overvoltage condition, the device immediately disconnects the DC power supply by turning off an internal low R DS(on) N-channel MOSFET to prevent damage to protected systems. In addition, the device also monitors its own junction temperature and switches off the internal MOSFET if the junction temperature exceeds the specified limit. The device can be controlled by the microcontroller and can also provide status information about fault conditions. The STBP120 is offered in a small, RoHS-compliant TDFN – 10-lead (2.5 mm x 2 mm) package. Figure 1. Logic diagram IN OUT STBP120 EN FLT GND AM00240 Figure 2. Pinout(1) NC 1 GND 2 FLT 3 IN 4 PAD1 10 EN 9 NC 8 NC 7 OUT 6 OUT PAD2 IN 5 AM00239 1. Pin 1, PAD1 and PAD2 are No Connect (NC) and may be tied to IN or GND. 6/36 Doc ID 15492 Rev 5 STBP120 Pin descriptions 2 Pin descriptions 2.1 Input (IN) Input voltage pin. This pin is connected to the DC power supply. External low ESR ceramic capacitor of minimum value 1 µF must be connected between IN and GND. This capacitor is for decoupling and also protects the IC against dangerous voltage spikes and ESD events. This capacitor should be located as close to the IN pins as possible. All IN pins (4, 5) must be hardwired to common supply. 2.2 Power output (OUT) Output voltage pin. This pin is connected to the input through a low RDS(on) N-channel MOSFET switch. If no fault is detected and the STBP120 is not disabled (controlled by the EN input), this switch is turned on and the output voltage follows the input voltage. The output is disconnected from the input when the input voltage is under the UVLO threshold or above the OVLO threshold, when the chip temperature is above the thermal shutdown threshold or when the chip is disabled by the EN input. There is a 50 ms delay, ton, between input voltage or junction temperature returns to specified range and the power output is connected to the input (see Figure 6). All OUT pins (6, 7) must be hardwired to common supply. 2.3 Fault indication output (FLT) The fault indication output (active-low - open-drain) provides information on the STBP120 state to the application controller. When FLT is active (i.e. driven low), this indicates the STBP120 is in the undervoltage or overvoltage condition or thermal shutdown mode is active. When the input voltage and junction temperature is in specified range, the FLT output is in high impedance (Hi-Z) state. There is an additional 50 ms delay, tstart, between the power output is connected to the input and the FLT output is deactivated (i.e. in Hi-Z state) (see Figure 6). Since the FLT output is of open-drain type, it may be pulled up by an external resistor R P to the controller supply voltage. If there is no need to use this output, it may be left disconnected. The suitable RP resistor value is in range of 10 kΩ to 1 MΩ . To improve safety and to prevent damage to application circuits in the event of extreme voltage or current conditions, an optional protective resistor RFLT can be connected between the FLT output and the controller input. The suitable RFLT resistor value is in range of 22 kΩ to 100 kΩ. The function of the FLT output is not affected by the EN input state (see Figure 9). Doc ID 15492 Rev 5 7/36 Pin descriptions 2.4 STBP120 Enable input (EN) This logical input (active-low) can be used to enable or disable the device. When EN input is driven high, the STBP120 enters the standby mode and the power output is disconnected from the input. When EN input is driven low and all operating conditions are within specified limits, the power output is connected to the input. Since the EN input has no internal pull-down resistor, its logical level must be defined by the controller or by an external resistor. If there is no need to use this input, it should be connected to the GND. To improve safety and to prevent damage to application circuits in the event of extreme voltage or current conditions, an optional protective resistor REN can be connected between the EN input and the controller output. The suitable resistor value is in range of 22 kΩ to 100 kΩ . The EN input level has no impact on the functionality of FLT output (see Figure 8 and Figure 9). 2.5 No Connect (NC) Pins 1, 8, 9 and exposed pads PAD1, PAD2 are No Connect. Pin 1 and exposed pads PAD1, PAD2 may be tied to IN or GND if necessary. 2.6 Ground (GND) Ground. All voltages are referenced to GND. Table 1. 8/36 Pin description and signal names Pin Name Type Function 1, PAD1, PAD2 NC — No Connect. May be tied to IN or GND. 2 GND Supply Ground 3 FLT Output Fault indication output (open-drain) 4, 5 IN Input / supply Input voltage 6, 7 OUT Output Output voltage 8, 9 NC — No Connect 10 EN Input Enable input (no internal pull-down resistor) Doc ID 15492 Rev 5 STBP120 Figure 3. Pin descriptions Block diagram OUT IN Core negative protection ESD protection SUPPLY REGULATOR CHARGE PUMP MOSFET DRIVER OSCILLATOR OFF VCC VREF VOLTAGE REFERENCE COUNTERS Input overvoltage FLT MCU INTERFACE CONTROL LOGIC Input undervoltage EN Temperature Thermal shutdown detector ESD protection ESD protection GND AM00306 Figure 4. Typical application circuit(1),(2) AC adapter SYSTEM CONNECTOR OR PERIPHERAL SUPPLY CURRENT DC-DC CHARGING CURRENT C1 1 µF IN OUT STBP120 C2 1 µF EN CHARGER IC ENABLE POWERED PERIPHERALS RFLT FLT EN BATTERY PACK SUPPLY CIRCUITS RPU CONTROLLER REN GND APPLICATION AM00314a 1. Optional resistors REN, RFLT prevent damage to the controller under extreme voltage or current conditions and are not required. Low ESR ceramic capacitor C1 is necessary to ensure proper function of the STBP120. Capacitor C2 is not necessary for STBP120 but may be required by the charger IC. 2. The STBP120 MOSFET switch topology allows the current to also flow in the reverse direction, from OUT to IN, which can be useful for powering external peripherals from the system connector. The charger IC should not contain the reverse diode to prevent the battery pack voltage from appearing on the system connector. If the reverse current (supply current) is undesirable, it may be prevented by connecting a Schottky diode in series with the OUT pin. The voltage drop between IN and charger is increased by the voltage drop across the diode. Doc ID 15492 Rev 5 9/36 Operation 3 STBP120 Operation The STBP120 provides overvoltage protection for positive input voltage up to 28 V using a built-in low RDS(on) N-channel MOSFET switch. 3.1 Power-up At power-up, with EN = low, the MOSFET switch is turned on after a 50 ms delay, ton, after the input voltage exceeds the UVLO threshold to ensure the input voltage is stabilized. After an additional 50 ms delay, tstart, the FLT indication output is deactivated (see Figure 6). The FLT output state is valid for VIN input voltage 1.2 V or higher. 3.2 Normal operation The device continuously monitors the input voltage and its own internal temperature so the output voltage is kept within the specified range. Internal MOSFET switch is turned on and the FLT output is not active. The STBP120 enters normal operation state if the input voltage returns to the interval between VUVLO and VOVLO - VHYS(OVLO) and the junction temperature falls below TOFF THYS(OFF). Internal MOSFET is turned on after the 50 ms delay ton to ensure that the conditions have stabilized. Then, after an additional 50 ms delay, tstart, the FLT output is deactivated (i.e. driven high). This behavior is equivalent to the startup shown on Figure 6. Note: The STBP120 MOSFET switch topology allows the current to also flow in the reverse direction, i.e. from OUT to IN, which can be useful e.g. for powering external peripherals from the system connector (see the supply current in Figure 4). At first, the current flows through the MOSFET body diode. If the voltage that appears on the IN terminal is above the UVLO threshold, the MOSFET is (after the 50 ms startup delay) turned on so the voltage drop across STBP120 is significantly reduced. The charger IC should not contain the reverse diode to prevent the battery pack voltage from appearing on the system connector. If the reverse current is undesirable, it may be prevented by connecting a properly rated low drop Schottky diode in series with the OUT pin. The voltage drop between IN and charger is increased by the voltage drop across the diode. Due to the MOSFET body diode, thermal shutdown protection is not functional for the supply current. 3.3 Undervoltage lockout (UVLO) To ensure proper operation under any conditions, the STBP120 has an undervoltage lockout (UVLO) threshold. For rising input voltage, the output remains disconnected from input until VIN voltage exceeds the VUVLO threshold (3.25 V typ). The FLT output is driven low as long as VIN is below the UVLO threshold (assuming the input voltage is above 1.2 V). For falling input voltage, the UVLO circuit has a 50 mV hysteresis, VHYS(UVLO), to improve noise immunity under transient conditions. 10/36 Doc ID 15492 Rev 5 STBP120 3.4 Operation Overvoltage lockout (OVLO) If the input voltage VIN rises above the threshold level VOVLO, the MOSFET switch is immediately turned off (see Figure 7). At the same time, the fault indication output FLT is activated (i.e. driven low). This device is equipped with hysteresis, VHYS(OVLO), to improve noise immunity under transient conditions. For available OVLO thresholds and hystereses, please see the Table 5. 3.5 Thermal shutdown If the STBP120 internal junction temperature exceeds the TOFF threshold, internal MOSFET switch is turned off and the fault indication output FLT is driven low. To improve thermal stability, this circuit has a 20 °C hysteresis, THYS(OFF). Doc ID 15492 Rev 5 11/36 Application information STBP120 4 Application information 4.1 Calculating the power dissipation The maximum power dissipation of the STBP120 internal power MOSFET can be calculated using following formula: PD = I2 x RDS(on)(max), Where I is current flowing through the MOSFET and RDS(on)(max) is maximum value of MOSFET resistance. Example: Rload = 5 Ω, VIN = 5 V, R DS(on)(max) = 150 mΩ I = VIN / (RDS(on)(max) + R load) = 5 / (5 + 0.150) = 0.97 A PD = 0.972 x 0.15 = 0.14 W The power dissipation of reverse diode (in powering peripherals mode) can be estimated as PD = (VOUT - VIN) x I ≈ 0.7 x I. 4.2 Calculating the junction temperature The maximum junction temperature for given power dissipation, ambient temperature and thermal resistance junction - to - ambient can be calculated as TJ = TA + 1.15 x PD x RthJA = TA + 1.15 x I2 x RDS(on)(max) x RthJA, where TJ is junction temperature, TA is given ambient temperature, 1.15 is a derating factor and RthJA is thermal resistance junction - to - ambient, depending on shape, dimension and design of PCB. Two examples of PCB with appropriate thermal resistance are listed in Table 3. The junction temperature may not exceed 125 °C (see Table 4), due to TOFF (thermal shutdown threshold temperature). Maximum allowed MOSFET current for ambient temperature TA = 85 °C and various RthJA values are listed in Figure 5. Example: For conditions listed in previous example, well designed PCB (RthJA = 82 °C/W) and TA = 85 °C, the maximum junction temperature is 85 + 1.15 x 0.14 x 82 = 98.2 °C. 4.3 12/36 PCB layout recommendations ● This device is intended as a protection device to the application from overvoltage. It must be ensured that the clearances between PCB tracks satisfy the high voltage design rules. ● Input capacitor, C1, should be located as close as possible to the STBP120 device. It should be a Low-ESR ceramic capacitor. Also the protective resistors RFLT, REN (if used) should be located close to the STBP120. ● For good thermal performance, it is recommended to connect the STBP120 exposed thermal pads with the PCB ground plane. In most designs, this requires thermal vias between the copper pads on PCB and the ground plane. Doc ID 15492 Rev 5 STBP120 5 Maximum rating Maximum rating Stressing the device above the rating listed in the “absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 2. Absolute maximum ratings Symbol Value Unit –55 to 150 C 260 C Operating junction temperature range –40 to 150 C TA Operating ambient temperature range –40 to 85 C VIN Input voltage (pins IN) –0.3 to 30 V VIO(OUT) Input / output voltage (pins OUT) –0.3 to 12 V VIO Input / output voltage (other pins) –0.3 to 7 V 2000 mA 15 mA ±15 (air), ±8 (contact) kV Human body model (HBM), Model = 2(4) 2000 V Machine model (MM), Model = B(5) 200 V TSTG TSLD(1) (2) TJ Parameter Storage temperature (VIN off) Lead solder temperature for 10 seconds IIN, Input / output current through MOSFET (pins IN, OUT) IOUT(MOSFET) I(FLT) Output current (pin FLT) ESD withstand voltage (IEC 61000-4-2, pins IN only)(3) VESD 1. Reflow at peak temperature of 260 °C. The time above 255 °C must not exceed 30 seconds. 2. Maximum junction temperature is internally limited by the thermal shutdown circuit (not valid for reverse current, see Chapter 3.2). 3. System-level value (see Figure 4, C1 ≥ 1 µF low ESR ceramic capacitor). 4. Human body model, 100 pF discharged through a 1.5kΩ resistor according the JESD22/A114 specification. 5. Machine model, 200 pF discharged through all pins according the JESD22/A115 specification. Doc ID 15492 Rev 5 13/36 Maximum rating STBP120 . Table 3. Thermal data Symbol Parameter RthJA Thermal resistance (junction to ambient) RthJC Thermal resistance (junction to case) Value Unit 204(1) 82(2) °C/W 43 °C/W 1. The package is mounted on a 2-layers (1S) JEDEC board as per JESD51-7 without thermal vias underneath the exposed pads. 2. The package is mounted on a 4-layers (2S2P) JEDEC board as per JESD51-7 with 2 thermal vias (one underneath each exposed pad) as per JESD-51-5. Thermal vias connected from exposed pad to 1'st buried copper plane of PCB. Figure 5. Maximum MOSFET current at TA = 85 °C for various PCB thermal performance and TJ = 125 °C 2.10 1.90 1.70 I (MOSFET) 1.50 [A] 1.30 1.10 0.90 0.70 50 100 150 200 250 300 350 Rth JA [˚C/W] AM00428b 14/36 Doc ID 15492 Rev 5 STBP120 6 DC and AC parameters DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement conditions summarized in Table 4. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 4. Operating and AC measurement conditions Parameter Value Unit 5 V Ambient operating temperature (TA) –40 to 85 °C Junction operating temperature (TJ) –40 to 125 °C 5 Ω Input voltage (VIN) Output load resistance (Rload) Table 5. DC and AC characteristics Test condition(1) Symbol Description VIN Input voltage range 1.2 VUVLO Input undervoltage lockout threshold 3.1 VHYS(UVLO) Undervoltage lockout hysteresis 20 VOVLO Overvoltage lockout threshold Min Typ Max Unit 28 V 3.25 3.4 V 50 100 mV VIN rises up OVLO threshold, OVLO option A 5.25 5.375 5.50 VIN rises up OVLO threshold, OVLO option B 5.30 5.50 5.70 VIN rises up OVLO threshold, OVLO option C 5.71 5.90 6.10 VIN rises up OVLO threshold, OVLO option D 5.70 6.02 6.40 30 60 90 mV V VHYS(OVLO) Input overvoltage hysteresis RDS(on) IN to OUT resistance EN = 0 V, VIN = 5 V, Rload connected to OUT 90 150 mΩ ICC Operating current EN = 0 V, no load on OUT, VIN = 5 V 170 250 µA ICC(STDBY) Standby current EN = 5 V, no load on OUT, VIN = 5 V 96 150 µA ICC(UVLO) UVLO operating current VIN = 2.9 V 70 100 µA VOL(FLT) FLT output low level voltage 1.2 V < VIN < VUVLO, ISINK(FLT) = 50 µA 20 400 mV 400 mV IL(FLT) FLT output leakage current VIL(EN) EN low level input voltage VIH(EN) EN high level input voltage IL(EN) EN input leakage current VIN > VOVLO, ISINK(FLT) = 1 mA V(FLT) = 5 V 5 nA 0.4 1.2 V(EN) = 0 V or 5 V Doc ID 15492 Rev 5 V V 5 nA 15/36 DC and AC parameters Table 5. STBP120 DC and AC characteristics (continued) Description Test condition(1) Min Typ ton Startup delay Time measured from VIN > VUVLO to VOUT = 0.3 V (see Figure 6) 30 50 70 ms tstart FLT indication delay (OK) Time measured from VOUT = 0.3 V to V(FLT) = 1.2 V (see Figure 6) 30 50 70 ms toff(2) Output turn-off time Time measured from VIN > VOVLO to VOUT ≤ 0.3 V. VIN increasing from 5.0 V to 8.0 V at 3.0 V/µs, Rload connected to OUT. (see Figure 7) 1.5 5 µs tstop(2) FLT indication delay (FAULT) Time measured from VIN > VOVLO to V(FLT) ≤ 0.4 V. VIN increasing from 5.0 V to 8.0 V at 3.0 V/µs, Rload connected to OUT. (see Figure 7) 1 tdis(2) Disable time Time measured from V(EN) ≥ 1.2 V to VOUT < 0.3 V. Rload connected to OUT. (see Figure 8) 1 Symbol Max Unit Timing parameters µs 5 µs Thermal shutdown TOFF Thermal shutdown threshold temperature THYS(OFF) Thermal shutdown hysteresis 130 1. Test conditions described in Table 4 (except where noted). 2. Guaranteed by design. Not tested in production. 16/36 Doc ID 15492 Rev 5 145 °C 20 °C STBP120 7 Timing diagrams Timing diagrams Figure 6. Startup(1) OVLO UVLO VIN ton 0.3 V VOUT 1.2 V tstart V(FLT) AM00335 1. EN input is low. Figure 7. Overvoltage protection(1) OVLO VIN VOUT UVLO toff 0.3 V tstop 0.4 V V(FLT) AM00336 1. EN input is low. Doc ID 15492 Rev 5 17/36 Timing diagrams Figure 8. STBP120 Disable (EN = high)(1) 1.2 V V(EN) OVLO VIN UVLO tdis 0.3 V VOUT AM00337 1. FLT output still indicates the VIN status. Figure 9. FLT behavior in disable (EN = high) 1.2 V V(EN) OVLO UVLO VIN equiv. to ton + tstart 1.2 V VFLT AM00338 18/36 Doc ID 15492 Rev 5 STBP120 8 Typical application performance (STBP120DVDK6F) Typical application performance (STBP120DVDK6F) Figure 10. Startup delay, ton 1. No load on the output. The “leakage” on the VOUT trace is a crosstalk caused mainly by the parasitic capacitances of the MOSFET switch. Figure 11. FLT indication delay (OK), tstart Doc ID 15492 Rev 5 19/36 Typical application performance (STBP120DVDK6F) Figure 12. Output turn-off time, toff 1. 5 Ω load on the output. Figure 13. FLT indication delay (FAULT), tstop 1. 5 Ω load on the output. 20/36 Doc ID 15492 Rev 5 STBP120 STBP120 Typical application performance (STBP120DVDK6F) Figure 14. Disable time, tdis 1. No change in VO(FLT) status during disable. 2. 5 Ω load on the output. Figure 15. Startup to overvoltage and startup VO(FLT) delay 1. 5 Ω load on the output. Doc ID 15492 Rev 5 21/36 Typical application performance (STBP120DVDK6F) STBP120 Figure 16. Startup inrush current 1. Output load 5 Ω in parallel with C = 100 µF, power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω. Figure 17. Output short-circuit 1. See also details on Figure 18. 2. Power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω. 22/36 Doc ID 15492 Rev 5 STBP120 Typical application performance (STBP120DVDK6F) Figure 18. Output short-circuit detail 1. Due to power supply cable impedance, during the output short-circuit the input voltage falls below the VUVLO threshold, resulting in turning off the power MOSFET and preventing any damage to the components. 2. Power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω. Doc ID 15492 Rev 5 23/36 Typical thermal characteristics (STBP120DVDK6F) 9 STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 19. ICC vs. temperature 180 170 160 150 140 ICC [µA] 130 120 110 100 90 80 –50 0 50 100 150 Temperature [˚C] AM00415 Figure 20. ICC(STDBY) vs. temperature 120 110 100 90 ICC(STDBY) [µA] 80 70 60 50 40 –50 0 50 100 150 Temperature [˚C] AM00416 24/36 Doc ID 15492 Rev 5 STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 21. ICC(UVLO) at 2.9 V vs. temperature 80.0 70.0 60.0 ICC(UVLO) [µA] 50.0 40.0 30.0 20.0 –50 0 50 100 150 Temperature [˚C] AM00417 Figure 22. VOVLO vs. temperature 6.3 6.2 6.1 VOVLO [V] 6 5.9 5.8 –50 0 50 100 150 Temperature [˚C] AM00420 Doc ID 15492 Rev 5 25/36 Typical thermal characteristics (STBP120DVDK6F) STBP120 Figure 23. VUVLO vs. temperature 3.4 3.35 3.3 VUVLO [V] 3.25 3.2 3.15 3.1 –50 0 50 100 150 Temperature [˚C] AM00422 Figure 24. VOL(FLT) at 1 mA vs. temperature 0.1 0.09 0.08 VOL(FLT) [V] 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 –50 0 50 100 150 Temperature [˚C] AM00424 26/36 Doc ID 15492 Rev 5 STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 25. RDS(on) at 1 A vs. temperature 140.0 120.0 100.0 RDS(on) [mΩ] 80.0 60.0 40.0 20.0 0.0 –50 0 50 100 150 Temperature [˚C] AM00427 Doc ID 15492 Rev 5 27/36 Package mechanical data 10 STBP120 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 26. TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical drawing D A B INDE X AREA E 0.10 C 2x 0.10 C 2x TOP VIEW 0.10 C A1 C A SEATING PLANE SIDE VIEW 0.08 C D2 -2 LEADS COPLA NARITY e 1 5 PI N#1 ID K (x10) 0.350 INDEX AR EA E2 0.195 0.195 L (x10) b (x 10) 0.10 10 0.02 5 D2- 1 C A B BOTTOM VIEW 10L_ME 28/36 Doc ID 15492 Rev 5 STBP120 Package mechanical data Table 6. TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical data dimensions(1) (mm) (inches) Symbol Note Min. Nom. Max. Min. Nom. Max. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.18 0.25 0.30 0.007 0.010 0.012 D BSC 2.50 0.098 D2-1 0.53 0.68 0.78 0.021 0.027 0.031 D2-2 0.93 1.08 1.18 0.037 0.043 0.046 E BSC E2 2.00 0.75 e 0.90 0.079 1.00 0.030 0.50 L 0.20 K 0.20 0.30 0.035 0.039 0.020 0.40 0.008 0.012 0.016 0.008 N 10 10 (2) 1. Controlling dimension: millimeters. 2. N is the total number of terminals. Doc ID 15492 Rev 5 29/36 Tape and reel specification 11 STBP120 Tape and reel specification Figure 27. Tape and reel P0 D P2 T E A0 F Top cover tape W B0 Center lines of cavity K0 P1 User direction of feed AM03073v2 Table 7. Tape size W D E 12 12.00 ± 0.30 1.50 +0.10 / –0.00 1.75 ± 0.10 Table 8. 30/36 Carrier tape dimensions Po P2 4.00 ± 0.10 2.00 ± 0.10 F 5.50 ± 0.05 Further tape and reel information Package code W Ao Bo 2 x 2.5mm TDFN 10 lead 12 2.30 ± 0.10 2.80 ± 0.10 Doc ID 15492 Rev 5 Ko P1 T 1.10 ± 4.00 ± 0.30 ± 0.01 0.10 0.05 Bulk Qty. Reel Diameter 3000 13 STBP120 Tape and reel specification Figure 28. Reel dimensions T 40 mm min. acces hole at slot location B D C N A Full radius Tape slot in core for tape start 25 mm min width G measured at hub AM00443 Table 9. Reel dimensions Tape size A max. B min. C D min. N min. G T max. 12 mm 330 (13 inch) 1.5 13 ± 0.2 20.2 60 12.4 + 2 / – 0 18.4 Doc ID 15492 Rev 5 31/36 Tape and reel specification STBP120 Figure 29. Tape trailer/leader End Top cover tape Start No components Components 100 mm min. T RA IL ER No components L EA D ER 160 mm min. 400 mm min. Sealed with cover tape User direction of feed AM00444 Figure 30. Pin 1 orientation Direction of feed Note: 32/36 1 Drawings are not to scale. 2 All dimensions are in mm, unless otherwise noted. Doc ID 15492 Rev 5 AM00442a STBP120 12 Part numbering Part numbering Table 10. Ordering information scheme STBP120 D V DK 6 F Device type STBP120 Overvoltage threshold A = 5.375 V B = 5.50 V C = 5.90 V D = 6.02 V Undervoltage threshold V = 3.25 V Package DK = TDFN – 10-lead, 2.5 x 2 mm Temperature range 6 = –40 °C to +85 °C Shipping method F = ECOPACK® package, tape and reel Note: Other overvoltage thresholds are offered. Minimum order quantities may apply. Contact local sales office for availability. Doc ID 15492 Rev 5 33/36 Package marking information 13 STBP120 Package marking information Table 11. Marking description Part number(1) Overvoltage threshold (V) Topside marking STBP120AVxxxx 5.375 P12A STBP120BVxxxx 5.50 P12B STBP120CVxxxx 5.90 P12C STBP120DVxxxx 6.02 P12D 1. Other overvoltage thresholds are offered. Minimum order quantities may apply. Contact local sales office for availability. 34/36 Doc ID 15492 Rev 5 STBP120 14 Revision history Revision history Table 12. Document revision history Date Revision Changes 20-Mar-2009 1 Initial release. 07-Apr-2009 2 Updated Section 2, Section 3, Figure 5, ton and tstart in Table 5 and shipping method in Table 10, added Section 8 and Section 9. 29-Apr- 2009 3 Updated the revision history table - removed the draft revisions. 01-Jun-2009 4 Updated Features, Section 4.3, Table 2, Figure 5, Table 5, Figure 10, Figure 12, Figure 13, Figure 14, Figure 15, Figure 16, Figure 17, Figure 18, removed Figure 22, Figure 23, Figure 25, Figure 27, Figure 29, Figure 30, added Section 11: Tape and reel specification. 25-Sep-2009 5 Document reformatted, updated overvoltage threshold option C in Table 5, Table 10 and Table 11. Doc ID 15492 Rev 5 35/36 STBP120 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 36/36 Doc ID 15492 Rev 5
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