STBV45
High voltage fast-switching NPN power transistor
Features
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
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Applications
■
Compact fluorescent lamps (CFLs)
■
SMPS for battery charger
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TO-92
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Description
Figure 1.
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The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV45G and STBV45G-AP are supplied
using halogen-free molding compound.
TO-92AP
Internal schematic diagram
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Table 1.
Device summary
Order codes
Marking
Package
Packaging
STBV45
BV45
TO-92
Bulk
STBV45G
BV45G
TO-92
Bulk
STBV45-AP
BV45
TO-92AP
Ammopack
STBV45G-AP
BV45G
TO-92AP
Ammopack
October 2008
Rev 6
1/10
www.st.com
10
Electrical ratings
1
STBV45
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Collector-emitter voltage (VBE = 0)
700
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0)
9
V
Collector current
0.75
A
Collector peak current (tP < 5 ms)
1.5
A
Base current
0.4
IBM
Base peak current (tP < 5 ms)
0.75
PTOT
Total dissipation at Tc = 25 °C
Tstg
Storage temperature
od
ICM
IB
Table 3.
Thermal resistance junction-case__________max
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Parameter
Rthj-case
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A
W
-65 to 150
Thermal data
Symbol
Pr
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0.95
Max. operating junction temperature
TJ
2/10
Unit
VCES
IC
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Value
°C
150
Value
Unit
131.6
°C/W
STBV45
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 700 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 9 V
VCEO(sus)
(1)
Collector-emitter sustaining
voltage (IB = 0)
IC = 1 mA
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 0.2 A
IC = 0.3 A
IC = 0.4 A
IB = 40 mA
IB = 75 mA
IB = 135 mA
IC = 0.2 A
IC = 0.3 A
IB = 40 mA
IB = 75 mA
Base-emitter saturation
VBE(sat) (1)
voltage
hFE
tf
DC current gain
Inductive load
Fall time
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IC = 0.5 mA
IC = 0.2 A
IC = 0.4 A
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VCE = 2 V
VCE = 5 V
VCE = 5 V
µA
1
mA
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400
du
0.2
0.3
0.4
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250
V
0.5
1
1.5
V
V
V
1
1.2
V
V
12
10
30
5
20
IC = 0.2 A _ Vclamp = 300 V
IB1 = -IB2 = 40 mA
Figure 8.
L = 3 mH
0.3
µs
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
2.1
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Electrical
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Figure 2.
Safe operating area
Figure 3.
Derating curve
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3/10
Electrical characteristics
Figure 4.
STBV45
Figure 6.
DC current gain
Figure 5.
Collector-emitter saturation
voltage
DC current gain
Figure 7.
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Base-emitter saturation
voltage
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4/10
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STBV45
2.2
Electrical characteristics
Test circuit
Figure 8.
Inductive load switching test circuit
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1) Fast electronic switch
2) Non-inductive resistor
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3) Fast recovery rectifier
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5/10
Package mechanical data
3
STBV45
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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6/10
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STBV45
Package mechanical data
TO-92 bulk shipment mechanical data
mm.
DIM.
MIN.
TYP
MAX.
A
4.32
4.95
b
0.36
0.51
D
4.45
4.95
E
3.30
e
2.41
e1
1.14
L
12.70
R
2.16
S1
0.92
W
0.41
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3.94
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V
2.67
1.40
15.49
2.41
1.52
0.56
5o
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0102782 D
7/10
Package mechanical data
STBV45
TO-92 ammopack shipment (suffix”-AP”) mechanical data
Dim.
mm
Typ
Min
A1
T
T1
T2
d
P0
P2
F1,F2
F3
delta H
W
W0
W1
W2
H
H3
H0
H1
D0
t
L
I1
delta P
12.50
5.65
2.44
4.98
-2.00
17.50
5.70
8.50
12.70
6.35
2.54
5.08
18.00
6.00
9.00
18.50
0.5
15.50
1
16.00
3.00
-1.00
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3.80
4.00
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1.00
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0050910S
8/10
Max
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
5.48
2.00
19.00
6.30
9.25
0.50
20.50
1.5
16.50
25.00
4.20
0.90
11.00
STBV45
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
Changes
13-Jul-2004
4
03-Jul-2008
5
Added halogen-free molding compound package.
22-Oct-2008
6
Updated Table 2 on page 2 and Table 4 on page 3
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STBV45
Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
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time, without notice.
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
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