STC03DE150

STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1500 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS(ON) IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 4.7 W APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE150 is designed for use in aux flyback smps for any three phase application. ) s ( ct 3 uc 1 2 ) s t( 4 d o r TO247-4L P e let Figure 2: Internal Schematic Diagram o s b O - u d o r P e t e l o s b O Electrical Symbol Device Structure Table 2: Order Code Part Number Marking Package Packaging STC03DE150 STC03DE150 TO247-4L TUBE October 2004 Rev. 2 1/9 STC03DE150 Table 3: Absolute Maximum Ratings Symbol Parameter VCS(SS) Collector-Source Voltage (VBS = VGS = 0 V) VBS(OS) Base-Source Voltage (IC= 0, VGS = 0 V) VSB(OS) Source-Base Voltage (IC= 0, VGS = 0 V) VGS IC ICM IB Value Unit 1500 V 30 V 9 V ± 20 V Collector Current 3 A Collector Peak Current (tp < 5ms) 6 A Base Current 2 A Gate-Source Voltage IBM Base Peak Current (tp < 1ms) 4 A Ptot Total Dissipation at TC = 25 oC 100 W Tstg Storage Temperature -65 to 125 °C TJ Max. Operating Junction Temperature 125 °C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max o r P Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICS(SS) Collector-Source Current (VBS = VGS = 0 V) VCS(SS) = 1500 V IBS(OS) Base-Source Current VBS(OS) = 30 V (IC = 0 , VGS = 0 V) ISB(OS) Source-Base Current VSB(OS) = 9 V (IC = 0 , VGS = 0 V) (t s) e t le VGS = ± 20 V VGS = 10 V IC = 1.8 A IB = 0.36 A VGS = 10 V IC = 0.7 A IB = 70 mA o r P e c u d VBS(ON) Base-Source ON Voltage t e l o Typ. b O - IGS(OS) Gate-Source Leakage DC Current Gain Min. so VCS(ON) Collector-Source ON Voltage hFE c u d 1 VGS = 10 V ) s t( Unit o C/W Max. Unit 100 mA 10 mA 100 mA 500 nA 1 1.5 V 1 1.3 V IC = 1.8 A VCS = 1 V IC = 0.7 A VCS = 1 V VGS = 10 V VGS = 10 V IC = 1.8 A IB = 0.36 A 1 1.2 V IB = 70 mA 0.8 1 V 2.2 3 V VGS = 10 V IC = 0.7 A 3.5 5 6 10 VGS(th) Gate Threshold Voltage VBS = VGS IB = 250 mA bs Input Capacitance VCS = 25 V f = 1MHZ 750 pF VCS = 15 V VGS = 10 V 12.5 nC VCB = 0 IC = 1.8 A 760 ns 14 ns Ciss O QGS(tot) Gate-Source Charge 2/9 1.5 VGS = VCB = 0 INDUCTIVE LOAD VGS = 10 V ts Storage Time RG = 47 W tf Fall Time tp = 4 ms VClamp = 1200 V IC = 1.8 A IB = 0.36 A STC03DE150 Symbol Parameter Test Conditions INDUCTIVE LOAD VGS = 10 V ts Storage Time RG = 47 W tf Fall Time tp = 4 ms Min. VClamp = 1200 V IC = 0.7 A IC = 3 A VGS = 10 V Max. Unit 690 ns 32 ns IB = 70 mA Maximum Collector-Source RG = 47 W hFE = 5 A Voltage without Snubber VCS(dyn) Collector-Source Dynamic VCC = VClamp = 400 V Voltage RG = 47 W (500 ns) IB = 0.1 A VCSW Typ. 1500 V 3.9 V 2.2 V IC = 0.5 A IBpeak = 1 A tpeak = 500 ns VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 400 V VGS = 10 V RG = 47 W IC = 0.5 A IB = 0.1 A IBpeak = 1 A tpeak = 500 ns c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 3/9 STC03DE150 Figure 3: Safe Operating Area Figure 6: Output Characteristics Figure 4: Reverse Biased Safe Operating Area Figure 7: Gate Threshold Voltage vs Temperature c u d e t le Figure 5: DC Current Gain u d o ) s ( ct r P e t e l o s b O 4/9 o r P o s b O - Figure 8: DC Current Gain ) s t( STC03DE150 Figure 9: Collector-Source On Voltage Figure 12: Collector-Source On Voltage Figure 10: Base-Source On Voltage Figure 13: Base-Source On Voltage c u d e t le ) s ( ct Figure 11: Inductive Load Switching Time u d o ) s t( o r P o s b O - Figure 14: Inductive Load Switching Time r P e t e l o s b O 5/9 STC03DE150 Figure 15: Dynamic Collector-Emitter Saturation Voltage Figure 16: Inductive Load Enlargement FBSOA Circuit c u d e t le Table 6: Components, Values D1 = BA157 t e l o R2 = 100 W bs R3 = VCC / I Cn Rg = 47 W O 6/9 u d o r P e VB1 = 4.16 V R1 = 1 W ) s ( ct C1 = 220 nF C2 ≤ 70 pF C3 = 50 nF Vg = 10 V Pulse Time = 5 ms o s b O - o r P ) s t( STC03DE150 TO247-4L MECHANICAL DATA mm DIM. MIN. TYP. MAX. A 4.85 5.15 A1 2.20 2.60 b 0.95 b1 1.30 1.10 1.70 b2 2.50 2.90 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 2.54 e1 5.08 L 14.20 L1 3.70 L2 3.55 ØR 4.50 c u d ) s t( 14.80 4.30 18.50 ØP 1.30 e t le S o r P 3.65 5.50 5.50 ) s ( ct o s b O - u d o r P e t e l o s b O 7536918A 7/9 STC03DE150 Table 7: Revision History Date Release 13-Sep-2004 04-Oct-2004 1 2 Change Designator First Release. Figure 15 has been updated on page 6. c u d e t le ) s ( ct u d o r P e t e l o s b O 8/9 o s b O - o r P ) s t( STC03DE150 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. t e l o bs O The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9