STC08DE150HV

STC08DE150HV Hybrid emitter switched bipolar transistor ESBT® 1500 V - 8 A - 0.075 Ω Features VCS(ON) IC RCS(ON) 0.6 V 8A 0.075 Ω ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1500 V ■ Very low CISS driven by RG = 47 Ω P e et 1 23 4 TO247-4L HV l o s Ob Figure 1. Single switch SMPS based on three-phase mains ) (s Description c u d ro Application ■ ) s t( Internal schematic diagrams t c u The STC08DE150HV is manufactured in a hybrid structure, using dedicated high voltage bipolar and low voltage MOSFET technologies, aimed at providing the best performance in an ESBT topology. d o r P e et l o s The STC08DE150HV is designed for use in auxiliary flyback SMPS for any three-phase application. Ob Table 1. Device summary Order code Marking Package Packing STC08DE150HV C08DE150HV TO247-4L HV Tube June 2009 Doc ID 12799 Rev 2 1/9 www.st.com 9 Electrical ratings 1 STC08DE150HV Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit 1500 V VCS(SS) Collector-source voltage (VBS = VGS = 0) VBS(OS) Base-source voltage (IC = 0, VGS = 0) 30 V VSB(OS) Source-base voltage (IC = 0, VGS = 0) 9 V VGS IC ICM IB Collector current 8 Collector peak current (tP < 5 ms) 15 Base peak current (tP < 1 ms) Ptot Total dissipation at Tc ≤ 25 °C Tstg Storage temperature ) s t( Symbol RthJC b O - Parameter uc Thermal resistance junction-case d o r e t e l o s Max. operating junction temperature Thermal data V ct u d o Base current Table 3. ) s ( ± 20 Gate-source voltage IBM TJ P e et l o s Ob 2/9 Value Doc ID 12799 Rev 2 Pr 8 A A A 15 A 156 W -40 to 150 °C 125 °C Value Unit 0.64 °C/W STC08DE150HV 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit µA ICS(SS) Collector cut-off current VCS = 1500 V (VBS = VGS = 0) 100 IBS(OS) Base cut-off current (IC = 0, VGS = 0) VBS = 30 V 10 ISB(OS) Source cut-off current (IC = 0, VGS = 0) VSB = 9 V IGS(OS) Gate-source leakage current (VBS = 0) VGS = ± 20 V VCS(ON) Collector-source ON voltage VGS = 10 V VGS = 10 V DC current gain IC = 8 A IC = 5 A hFE (1) Base-source ON VBS(ON) voltage VGS(th) Ciss od O t e l o s b O IC = 8 A IC = 5 A VGS = 10 V VGS = 10 V IB = 250 µA VCS = 25 V f = 1 MHz 500 nA 1.4 V V 1.5 1 2 V V 2.2 3 V 0.6 0.6 4.5 8 IB = 1.6 A IB = 0.5 A VBS = VGS µA 1.5 7.5 10 750 pF 12.5 nC VGS = 10 V IC = 8 A ts tf Inductive load Storage time Fall time VGS = 10 V VClamp = 1200 V IC = 5 A RG = 47 Ω tp = 4 µs IB = 0.5 A 526 8.5 ns ns ts tf Inductive load Storage time Fall time VGS = 10 V VClamp = 1200 V IC = 5 A RG = 47 Ω tp = 4 µs IB = 1 A 884 16 ns ns Maximum collectorsource voltage at turnoff without snubber RG = 47 Ω r P e bs t c u Input capacitance (VGS = VCB = 0) IB = 1.6 A IB = 0.5 A 100 d o r eP IC = 8 A IC = 5 A µA Gate-source charge VCB = 0 QGS(tot) t e l o ) (s t c u VCS = 1 V VCS = 1 V VGS = 10 V VGS = 10 V Gate threshold voltage ) s ( VCSW hFE = 5 VCS = 25 V IC = 8 A 1500 V Collector-source VCS(dyn) dynamic voltage (0.5 µs) VCC = VClamp = 300 V IC = 4 A VGS = 10 V tpeak = 500 ns IB = 0.8 A IBpeak = 8 A (2IC ) RG = 47 Ω 6 V Collector-source VCS(dyn) dynamic voltage (1 µs) VCC = VClamp = 300 V IC = 4 A VGS = 10 V tpeak = 500ns IB = 0.8 A RG = 47 Ω IBpeak = 8 A (2IC ) 2.2 V 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% Doc ID 12799 Rev 2 3/9 Electrical characteristics 2.1 STC08DE150HV Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Collector-source dynamic voltage ) s t( c u d Figure 4. DC current gain Figure 5. o r P Gate threshold voltage vs. temperature e t le o s b O ) s ( t c u d o let r P e Figure 6. o s b Collector-source ON voltage (hFE = 5) Figure 7. O 4/9 Doc ID 12799 Rev 2 Collector-source ON voltage (hFE = 10) STC08DE150HV Figure 8. Electrical characteristics Base-source ON voltage (hFE = 5) Figure 9. Base-source ON voltage (hFE = 10) ) s t( c u d Figure 10. Inductive load switching time Figure 11. Inductive load switching time (hFE = 5) (hFE = 10) e t le o r P o s b O ) s ( t c u d o r P e Figure 12. Reverse biased safe operating area t e l o s b O Doc ID 12799 Rev 2 5/9 Package mechanical data 3 STC08DE150HV Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 6/9 Doc ID 12799 Rev 2 o r P STC08DE150HV Package mechanical data TO247-4L HV mechanical data DIM. mm. TYP MIN. 4.85 2.20 A A1 A2 MAX. 5.15 2.60 2.50 1.27 b 0.95 b1 1.10 1.50 b2 c D D1 E 2.50 0.40 23.85 2.90 0.80 24.15 1.10 24 21.50 15.60 2.54 15.45 e 5.08 e1 L L1 L2 L3 øP S 10.20 2.20 2.50 18.50 3 e t le 3.55 o s b 1.30 ) s t( c u d 15.75 o r P 10.80 2.80 3.65 5.50 O ) s ( t c u d o r P e t e l o s b O 7734874_A Doc ID 12799 Rev 2 7/9 Revision history 4 STC08DE150HV Revision history Table 5. Document revision history Date Revision Changes 25-Oct-2006 1 First release. 17-Jun-2009 2 Document status promoted from preliminary data to datasheet. ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 8/9 Doc ID 12799 Rev 2 o r P STC08DE150HV ) s t( Please Read Carefully: c u d Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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