0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
STC08IE120HV

STC08IE120HV

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247-4

  • 描述:

    TRANS ESBT 1200V 8A TO247-4LHV

  • 数据手册
  • 价格&库存
STC08IE120HV 数据手册
STC08IE120HV Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω General features VCS(ON) IC RCS(ON) 0.8 V 8A 0.10 W ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■ Squared RBSOA up to 1200V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time Flyback / forward SMPS ■ Sepic PFC ) s ( ct Description P e 23 4 TO247-4L HV Applications ■ du ro 1 ) s ( ct t e l Internal schematic diagrams o s b -O u d o The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. r P e t e l o s b O Order codes Part Number Marking Package Packaging STC08IE120HV C08IE120HV TO247-4L HV Tube January 2007 Rev 3 1/11 www.st.com 11 STC08IE120HV Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/11 s b O STC08IE120HV Electrical ratings Electrical ratings 1 Table 1. Absolute maximum rating Symbol Parameter Value Unit 1200 V VCS(SS) Collector-source voltage (V BS = VGS = 0 V) VBS(OS) Base-source voltage (IC = 0, V GS = 0 V) 30 V VSB(OS) Source-base voltage (IC = 0, V GS = 0 V) 17 V ± 17 V VGS IC ICM IB Gate-source voltage Collector current 8 Collector peak current (tP < 5ms) 24 Base peak current (tP < 5ms) Ptot Total dissipation at T c = 25°C Tstg Storage temperature TJ Table 2. ete ol bs Max. operating junction temperature O ) Thermal data s ( t c Symbol Rthj-case u d o Base current IBM Parameter Thermal resistance junction-case u d o ) s ( ct __max Pr 6 A A A 12 A 208 W -40 to 150 °C 150 °C Value Unit 0.6 °C/W r P e t e l o s b O 3/11 Electrical characteristics 2 STC08IE120HV Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter ICS(SS) Collector-source current (VBS = V GS = 0) VCE = 1200V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0) VBS(OS) = 30V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 17V 100 µA IGS(OS) Gate-source leakage VGS = ± 17V 100 nA VCS(ON) Collector-source ON voltage VGS = 10V _IC = 8A IB = 1.6A VGS = 10V_ IC = 4A IB = 0.4A 1 1.2 V V VGS = 10V_ IC = 8A VCS = 1V VGS = 10V_ IC = 4A_ VCS = 1V hFE DC current gain VBS(ON) Base Source ON voltage VGS(th) Gate threshold voltage CISS QGS(tot) ct t e l o bs O tf ts tf VCSW VCS(dyn) VCS(dyn) 4/11 s b O VGS = 10V_ IC = 8A IB = 1.6A IC = 4A 1.5 1.5 2 IB = 0.8A VGS = 10V RG = 47Ω tp = 4µs IC = 4A IB = 0.4A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs RG = 47Ω hFE = 5A IC = 8A Collector-source dynamic voltage (500ns) VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A Collector-source dynamic voltage VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A (1 µs) 5 7 VGS = 0 VClamp = 960V Maximum collectorsource voltage switched without snubber 0.8 0.5 VCS = 25V ______f = 1MHz INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time r P e VBS = VGS ______IB = 250µA VGS = 10V IBpeak = 4A IBpeak = 4A Typ. Max. Unit u d o VGS = 10V_ IC = 4A_ IB = 0.4A Gate-source charge r P e ts Min. ) s ( ct t e l o ) (s Input capacitance u d o Test Conditions 3 V V 4 V 550 pF 26 nC 670 ns 15 ns 340 ns 10.2 ns 1200 V 5.75 V 3.35 V tpeak = 500ns tpeak = 500ns STC08IE120HV 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain ) s ( ct Figure 3. Collector-source On voltage Figure 4. u d o Collector-source On voltage r P e t e l o ) (s s b O t c u Figure 5. d o r Base-source On voltage P e Figure 6. Base-source On voltage t e l o s b O 5/11 Electrical characteristics Figure 7. STC08IE120HV Figure 9. Reverse biased safe operting Figure 8. area Dynamic collector-emitter saturation voltage Gate threshold voltage vs temperature ) s ( ct u d o Figure 10. Inductive load switching time t e l o r P e ) (s t c u d o r s b O Figure 11. Inductive load switching time P e t e l o s b O 6/11 STC08IE120HV 2.2 Electrical characteristics Test circuits Figure 12. Inductive load switching and RBSOA test circuit ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 7/11 Package mechanical data 3 STC08IE120HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/11 s b O STC08IE120HV Package mechanical data TO247-4LHV MECHANICAL DATA mm. DIM. MIN. A 4.85 A1 2.20 TYP MAX. 5.15 2.50 A2 2.60 1.27 b 0.95 b2 2.50 c 0.40 D 23.85 1.10 2.90 0.80 21.50 15.45 e 2.54 e1 5.08 L 10.20 L1 2.20 L2 L3 ‡P 3.55 ) (s S u d o 24 D1 E ) s ( ct 1.30 15.60 e t e ol 2.50 s b O 24.15 Pr 15.75 10.80 2.80 18.50 3 3.65 5.50 t c u d o r P e t e l o s b O 7734874 9/11 Revision history 4 STC08IE120HV Revision history Table 4. Revision history Date Revision Changes 11-May-2006 1 Initial release. 16-Oct-2006 2 The lower temperature storage limit has been modified on page 3. 12-Jan-2007 3 The device’s commercial code has been changed from preliminary to full. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/11 s b O STC08IE120HV ) s ( ct Please Read Carefully: u d o IInformation in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. t e l o Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u d o r UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11
STC08IE120HV 价格&库存

很抱歉,暂时无法提供与“STC08IE120HV”相匹配的价格&库存,您可以联系我们找货

免费人工找货