STC08IE120HV
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 Ω
General features
VCS(ON)
IC
RCS(ON)
0.8 V
8A
0.10 W
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
very fast-switch up to 150 kHz
■
Squared RBSOA up to 1200V
■
Very low Ciss driven by RG = 47Ω
■
Very low turn-off cross over time
Flyback / forward SMPS
■
Sepic PFC
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Description
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4
TO247-4L HV
Applications
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Internal
schematic diagrams
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The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topologies.
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Order codes
Part Number
Marking
Package
Packaging
STC08IE120HV
C08IE120HV
TO247-4L HV
Tube
January 2007
Rev 3
1/11
www.st.com
11
STC08IE120HV
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STC08IE120HV
Electrical ratings
Electrical ratings
1
Table 1.
Absolute maximum rating
Symbol
Parameter
Value
Unit
1200
V
VCS(SS)
Collector-source voltage (V BS = VGS = 0 V)
VBS(OS)
Base-source voltage (IC = 0, V GS = 0 V)
30
V
VSB(OS)
Source-base voltage (IC = 0, V GS = 0 V)
17
V
± 17
V
VGS
IC
ICM
IB
Gate-source voltage
Collector current
8
Collector peak current (tP < 5ms)
24
Base peak current (tP < 5ms)
Ptot
Total dissipation at T c = 25°C
Tstg
Storage temperature
TJ
Table 2.
ete
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Max. operating junction temperature
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Thermal data
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Symbol
Rthj-case
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Base current
IBM
Parameter
Thermal resistance junction-case
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__max
Pr
6
A
A
A
12
A
208
W
-40 to 150
°C
150
°C
Value
Unit
0.6
°C/W
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Electrical characteristics
2
STC08IE120HV
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
ICS(SS)
Collector-source current
(VBS = V GS = 0)
VCE = 1200V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 30V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 8A
IB = 1.6A
VGS = 10V_ IC = 4A
IB = 0.4A
1
1.2
V
V
VGS = 10V_ IC = 8A
VCS = 1V
VGS = 10V_ IC = 4A_
VCS = 1V
hFE
DC current gain
VBS(ON)
Base Source ON voltage
VGS(th)
Gate threshold voltage
CISS
QGS(tot)
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tf
VCSW
VCS(dyn)
VCS(dyn)
4/11
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VGS = 10V_ IC = 8A
IB = 1.6A
IC = 4A
1.5
1.5
2
IB = 0.8A VGS = 10V
RG = 47Ω
tp = 4µs
IC = 4A
IB = 0.4A VGS = 10V
VClamp = 960V RG = 47Ω
tp = 4µs
RG = 47Ω
hFE = 5A IC = 8A
Collector-source
dynamic voltage
(500ns)
VCC = VClamp = 400V V GS = 10V
RG = 47Ω IC = 4A IB = 0.8A
Collector-source
dynamic voltage
VCC = VClamp = 400V V GS = 10V
RG = 47Ω IC = 4A IB = 0.8A
(1 µs)
5
7
VGS = 0
VClamp = 960V
Maximum collectorsource voltage switched
without snubber
0.8
0.5
VCS = 25V ______f = 1MHz
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
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VBS = VGS ______IB = 250µA
VGS = 10V
IBpeak = 4A
IBpeak = 4A
Typ. Max. Unit
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VGS = 10V_ IC = 4A_ IB = 0.4A
Gate-source charge
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Min.
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Input capacitance
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Test Conditions
3
V
V
4
V
550
pF
26
nC
670
ns
15
ns
340
ns
10.2
ns
1200
V
5.75
V
3.35
V
tpeak = 500ns
tpeak = 500ns
STC08IE120HV
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
DC current gain
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Figure 3.
Collector-source On voltage
Figure 4.
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Collector-source On voltage
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Figure 5.
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Base-source On voltage
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Figure 6.
Base-source On voltage
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5/11
Electrical characteristics
Figure 7.
STC08IE120HV
Figure 9.
Reverse biased safe operting Figure 8.
area
Dynamic collector-emitter
saturation voltage
Gate threshold voltage vs
temperature
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Figure 10. Inductive load switching time
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Figure 11. Inductive load switching time
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STC08IE120HV
2.2
Electrical characteristics
Test circuits
Figure 12. Inductive load switching and RBSOA test circuit
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Package mechanical data
3
STC08IE120HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STC08IE120HV
Package mechanical data
TO247-4LHV MECHANICAL DATA
mm.
DIM.
MIN.
A
4.85
A1
2.20
TYP
MAX.
5.15
2.50
A2
2.60
1.27
b
0.95
b2
2.50
c
0.40
D
23.85
1.10
2.90
0.80
21.50
15.45
e
2.54
e1
5.08
L
10.20
L1
2.20
L2
L3
P
3.55
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D1
E
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1.30
15.60
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2.50
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24.15
Pr
15.75
10.80
2.80
18.50
3
3.65
5.50
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7734874
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Revision history
4
STC08IE120HV
Revision history
Table 4.
Revision history
Date
Revision
Changes
11-May-2006
1
Initial release.
16-Oct-2006
2
The lower temperature storage limit has been modified on page 3.
12-Jan-2007
3
The device’s commercial code has been changed from preliminary to
full.
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STC08IE120HV
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Please Read Carefully:
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
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