STC20DE90HP
Hybrid emitter switched bipolar transistor
ESBT® 900 V - 20 A - 0.06 W
Preliminary Data
General features
Table 1.
General features
VCS(ON)
IC
RCS(ON)
1.2 V
20 A
0.06 Ω
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Squared RBSOA, up to 900 V
■
Very low CISS driven by RG = 47 Ω
■
In compliance with the 2002/93/EC European
Directive
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TO247-4L HP
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Description
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Internal schematic diagrams
The STC20DE90HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC20DE90HP is designed for use in power
supply forward converter and three-phase power
factor corrector applications.
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Applications
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■
SMPS forward converter
■
Three-phase power factor corrector
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Order codes
Part Number
Marking
Package
Packing
STC20DE90HP
C20DE90HP
TO247-4L HP
Tube
October 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
STC20DE90HP
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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2/11
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STC20DE90HP
Electrical ratings
Electrical ratings
1
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCS(SS)
Collector-source voltage (V BS =VGS =0V)
900
V
VBS(OS)
Base-source voltage (IC =0, VGS =0V)
30
V
VSB(OS)
Source-base voltage (IC =0, VGS =0V)
9
V
± 20
V
VGS
IC
ICM
IB
Gate-source voltage
Collector current
20
Collector peak current (tP < 5ms)
60
5
Base peak current (tP < 1ms)
Ptot
Total dissipation at T c ≤ 25°C
Tstg
Storage temperature
TJ
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Thermal data
t(s
Symbol
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Max. operating junction temperature
Table 3.
Rthj-case
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Base current
IBM
Parameter
uc
Thermal resistance junction-case
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max
Pr
A
A
A
20
A
46
W
-40 to 150
°C
150
°C
Value
Unit
2.7
°C/W
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3/11
Electrical characteristics
2
STC20DE90HP
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Max.
Unit
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
hFE
DC current gain
VBS(ON)
Base-source ON
voltage
VGS(th)
Gate threshold voltage
let
ts
tf
ts
tf
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Input capacitance
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VCS(dyn)
4/11
Typ.
Collector-source current
VCS(SS) =900V
(VBS =V GS =0V)
QGS(tot)
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Min.
ICS(SS)
Ciss
so
Test Conditions
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(500ns)
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VGS =10V
IC =20A
VGS =10V
IC =10A
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IB =4A
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IB =1A
1.2
0.65
VCS =1V
V GS =10V IC =20A
4
VCS =1V
V GS =10V IC =10A
12
bs
VGS =10V IC =20A
IB =4A
VGS =10V IC =10A
IB =1A
-O
VBS =V GS
IB =250µA
VCS =25V
f =1MHz
VGS=VCB=0V
VCS=25V
V GS=10V
VCB=0V
IC =20A
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =10A
IB =2A
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =10A
IB =1A
V
V
1.8
1.2
1.5
2.2
V
V
3
V
750
pF
12.5
nC
775
ns
7
ns
510
ns
5
ns
2.3
V
VCC =VClamp =400V
VGS =10V
IC =10A
IB = 2A
R G =47Ω
tpeak =500ns
IBpeak =10A
STC20DE90HP
Electrical characteristics
Table 4.
Symbol
Electrical characteristics
Parameter
VGS =10V
IC =10A
IB = 2A
RG =47Ω
tpeak =500ns
IBpeak =10A
Maximum collectorsource voltage switched RG =47Ω
without snubber
VCSW
Min.
Typ.
Max.
hFE =5
IC =20A
1
V
900
V
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
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Electrical characteristics (curves)
Figure 1.
Unit
VCC =VClamp =400V
Collector-source
dynamic voltage
(1µs)
VCS(dyn)
Test Conditions
Output characteristics
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Figure 2.
Dynamic collector-source
saturation voltage
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Figure 3.
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DC current gain
Figure 4.
Gate threshold voltage vs
temperature
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5/11
Electrical characteristics
Figure 5.
STC20DE90HP
Figure 7.
Collector-source On voltage
Base-source On voltage
Figure 6.
Collector-source On voltage
Figure 8.
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Base-source On voltage
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Figure 9.
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6/11
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Inductive load switching time Figure 10. Inductive load switching time
STC20DE90HP
Electrical characteristics
Figure 11. Reverse biased safe
operating area
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7/11
Package mechanical data
3
STC20DE90HP
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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8/11
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STC20DE90HP
Package mechanical data
TO247-4LHP MECHANICAL DATA
DIM.
mm.
TYP
5.65
3.15
1.92
3.18
1.10
MIN.
5.50
2.85
A
A1
A2
A3
b
b1
b2
c
D
D1
E
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e1
L
L1
L2
L3
øP
S
0.95
1.10
2.50
0.40
23.85
MAX.
5.80
3.25
24
21.50
15.60
1.30
1.50
2.90
0.80
24.15
15.45
2.54
3.55
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2.50
18.50
3
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5.08
10.20
2.20
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15.75
10.80
2.80
3.65
5.50
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7908765A
9/11
Revision history
4
STC20DE90HP
Revision history
26
Table 5.
Revision history
Date
Revision
10-Oct-2006
1
Changes
First release.
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STC20DE90HP
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
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