STD10NM50N

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET Features VDSS (@Tjmax) Type TAB RDS(on) max ID 3 1 STD10NM50N STF10NM50N 550 V < 0.63 Ω 3 1 DPAK 7A 2 TO-220FP TAB STP10NM50N ■ 100% avalanche tested ■ Low input capacitance and gate charge 3 1 ■ Low gate input resistance 2 TO-220 Applications ■ Switching applications Figure 1. Internal schematic diagram Description $4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD10NM50N STF10NM50N 10NM50N TO-220FP Tube STP10NM50N October 2011 TO-220 Doc ID 16929 Rev 3 1/18 www.st.com 18 Contents STD10NM50N, STF10NM50N, STP10NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP VDS Drain-source voltage 500 V VGS Gate- source voltage ± 25 V 7 7 (1) A 5 5 (1) A Drain current (pulsed) 28 28 (1) A PTOT Total dissipation at TC = 25 °C 70 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID IDM (2) dv/dt (3) Tstg Peak diode recovery voltage slope Storage temperature 15 V/ns - 55 to 150 °C 150 °C Max. operating junction temperature Tj 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area 3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max TO-220 TO-220FP 1.79 5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb minimum footprint Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Doc ID 16929 Rev 3 Value Unit 2 A 143 mJ 3/18 Electrical characteristics 2 STD10NM50N, STF10NM50N, STP10NM50N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source V(BR)DSS breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 500 V VDS = 500 V, TC = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V 0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.5 A 0.53 0.63 Ω Min. Typ. Max. Unit Table 6. Symbol 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 450 38 1.3 - pF pF pF Equivalent output catacitance VGS = 0, VDS = 0 to 400 V - 167 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 7 A, VGS = 10 V, (see Figure 18) - 17 3.3 8.5 - nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 4.7 - Ω Ciss Coss Crss Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/18 Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N Table 7. Symbol td(on) tr td(off) tf Table 8. Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 250 V, ID = 3.5 A RG = 4.7 Ω VGS = 10 V (see Figure 17) Min. Typ. Max. Unit - 7.8 4.4 7.8 12 - ns ns ns ns Min Typ. Max Unit - 7 28 A A 1.3 V Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 7 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 177 1.4 16 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 216 1.7 15.4 ns µC A trr Qrr IRRM trr Qrr IRRM Test conditions 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 16929 Rev 3 5/18 Electrical characteristics STD10NM50N, STF10NM50N, STP10NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Thermal impedance for DPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-220 AM08150v1 ID (A) is 10µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea 10 Figure 3. 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 4. Tj=150°C Tc=25°C Single pulse 10 1 100 VDS(V) Safe operating area for TO-220FP AM08151v1 ID (A) 10µs ) on D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 6. Tj=150°C Tc=25°C Single pulse 10 1 100 Safe operating area for TO-220 AM08149v1 ID (A) ) 10µs D S( on O Li per m at ite io d ni by n m this ax a R rea is 10 1 VDS(V) 100µs 1ms 10ms 0.1 0.01 0.1 6/18 Tj=150°C Tc=25°C Single pulse 1 10 100 VDS(V) Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N Figure 8. Electrical characteristics Output characteristics Figure 9. AM08152v1 ID (A) VGS=10V Transfer characteristics AM08153v1 ID (A) VDS=20V 12 12 6V 10 10 8 8 6 6 4 4 5V 2 2 0 0 5 10 20 15 30 25 0 0 VDS(V) 2 4 8 6 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08154v1 VGS (V) VDS VDD=400V ID=7A 12 450 AM08155v1 RDS(on) (Ω) VGS=10V 400 0.55 350 10 300 8 250 6 200 0.54 0.53 150 4 100 2 0.52 0.51 50 0 0 10 5 15 0 25 Qg(nC) 20 Figure 12. Capacitance variations 2 4 6 ID(A) Figure 13. Output capacitance stored energy AM08156v1 C (pF) 0.50 0 AM08157v1 Eoss (µJ) 16 1000 Ciss 14 12 100 10 8 Coss 10 6 4 2 1 0.1 1 10 100 Crss VDS(V) Doc ID 16929 Rev 3 0 0 100 200 300 400 500 600 VDS(V) 7/18 Electrical characteristics STD10NM50N, STF10NM50N, STP10NM50N Figure 14. Normalized gate threshold voltage vs temperature AM08158v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08159v1 RDS(on) (norm) 1.10 ID=250µA 2.1 1.9 ID = 3.5 A 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Figure 16. Normalized BVDSS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 8/18 0 25 50 75 100 TJ(°C) Doc ID 16929 Rev 3 0 25 50 75 100 TJ(°C) STD10NM50N, STF10NM50N, STP10NM50N 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16929 Rev 3 10% AM01473v1 9/18 Package mechanical data 4 STD10NM50N, STF10NM50N, STP10NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/18 Max. 0.20 0° 8° Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N Package mechanical data Figure 23. DPAK (TO-252) drawing 0068772_H Figure 24. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters Doc ID 16929 Rev 3 11/18 Package mechanical data Table 10. STD10NM50N, STF10NM50N, STP10NM50N TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 12/18 Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16929 Rev 3 13/18 Package mechanical data STD10NM50N, STF10NM50N, STP10NM50N Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S 14/18 Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N 5 Packaging mechanical data Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 16929 Rev 3 18.4 22.4 15/18 Packaging mechanical data STD10NM50N, STF10NM50N, STP10NM50N Figure 27. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 28. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 Doc ID 16929 Rev 3 STD10NM50N, STF10NM50N, STP10NM50N 6 Revision history Revision history Table 13. Document revision history Date Revision 16-Dec-2009 1 First release. 08-Sep-2010 2 Document status promoted from preliminary data to datasheet. 3 Updated VDSS (@Tjmax) in cover page. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. 26-Oct-2011 Changes Doc ID 16929 Rev 3 17/18 STD10NM50N, STF10NM50N, STP10NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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