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STD10NM60N

STD10NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO252

  • 描述:

    表面贴装型 N 通道 600 V 10A(Tc) 70W(Tc) DPAK

  • 数据手册
  • 价格&库存
STD10NM60N 数据手册
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features 7$% Order code      DPAK VDS @TJ max. STP10NM60N 7$% ID PTOT STD10NM60N STF10NM60N TO-220FP RDS(on) max. 70 W 650 V 0.55 Ω 25 W 10 A 70 W STU10NM60N 7$% • 100% avalanche tested       IPAK TO-220 • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram Applications • Switching applications ' 7$% Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. *  6  $0Y Table 1. Device summary Order code Marking Package Packing STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube December 2015 This is information on a product in full production. DocID028726 Rev 1 1/28 www.st.com Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits .............................................. 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 STD10NM60N, DPAK (TO-252) package information . . . . . . . . . . . . . . . 10 4.2 STF10NM60N, TO-220FP package information . . . . . . . . . . . . . . . . . . . 17 4.3 STP10NM60N, TO-220 package information . . . . . . . . . . . . . . . . . . . . . . 19 4.4 STU10NM60N, IPAK (TO-251) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP IPAK DPAK VGS Gate- source voltage ± 25 ID Drain current (continuous) at TC = 25 °C 10 (1) ID Drain current (continuous) at TC = 100 °C 5 IDM(2) Drain current (pulsed) 32 PTOT Total dissipation at TC = 25 °C 70 dv/dt(3) VISO 10 5 (1) 32 (1) 25 Peak diode recovery voltage slope Operating junction temperature Tstg Storage temperature 10 A 5 A 32 A 70 W 15 Insulation withstand voltage (RMS) from all three leads to external heat sink (t =1 s; TC = 25 °C) TJ V V/ns 2500 V - 55 to 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP IPAK DPAK Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. Rthj-pcb Thermal resistance junction-pcb max. 1.79 5 1.79 62.50 °C/W 100 °C/W 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max.) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 200 mJ DocID028726 Rev 1 3/28 28 Electrical characteristics 2 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On/off-states Symbol V(BR)DSS Parameter Test conditions ID = 1 mA, VGS = 0 Drain-source breakdown voltage Min. VDS = 600 V Zero-gate voltage drain current (VGS = 0) VDS = 600 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 4 A resistance Unit V 650 1 µA 100 VGS = ± 25 V VGS(th) Max. 600 ID = 1 mA, VGS = 0, TC = 150 °C IDSS Typ. ± 100 nA 3 4 V 0.53 0.55 Ω Min. Typ. Max. Unit - 540 - pF - 44 - pF - 1.2 - pF 2 Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq(1) Equivalent capacitance time related VDS = 0 to 480 V, VGS = 0 - 110 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Ω Qg Total gate charge - 19 - nC Qgs Gate-source charge - 3 - nC Qgd Gate-drain charge VDD = 480 V, ID = 8 A, VGS = 10 V (see Figure 17) - 10 - nC VDS = 50 V, f = 1 MHz, VGS = 0 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Rise time Turn-off-delay time Fall time Min. Typ. Max. Unit - 10 - ns - 12 - ns - 32 - ns - 15 - ns Table 8. Source-drain diode Symbol ISD Parameter Test conditions Source-drain current Min. Typ. Max. Unit - 8 A ISDM(1) Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 8 A, VGS = 0 - trr Reverse recovery time - 250 ns Qrr Reverse recovery charge - 2.12 µC IRRM Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD= 60 V (see Figure 18) 17 A ISD = 8 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 18) - 315 ns 2.6 µC 16.5 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 32 1.3 V 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID028726 Rev 1 5/28 28 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics (curves) 2.1 Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 $0Y ,' $ —V   2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD  5 UH D ' 6 LV RQ —V —V PV PV 7M ƒ& 7F ƒ&  6LQJOH SXOVH      9'6 9 Figure 4. Safe operating area for TO-220FP RQ 2 S /L HUD P WL LWH RQ G LQ E\ W P KLV D[ D 5 UHD LV ,' $ —V ' 6   Figure 5. Thermal impedance for TO-220FP $0Y —V PV 7M ƒ& 7F ƒ&  PV 6LQJOH SXOVH      9'6 9 Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK $0Y ,' $ —V  RQ —V ' 6 2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D LV —V  PV PV 7M ƒ& 7F ƒ&  6LQJOH SXOVH   6/28    9'6 9 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 8. Output characteristics Figure 9. Transfer characteristics $0Y ,' $  Electrical characteristics 9*6 9 $0Y ,' $  9'6 9 9         9     9         Figure 10. Normalized VDS vs. temperature $0Y 9'6 QRUP ,' P$    9'6 9      9*6 9 Figure 11. Static drain-source on-resistance $0Y 5'6 RQ :         9*6 9             7- ƒ& Figure 12. Gate charge vs. gate-source voltage $0Y 9*6 9 9'' 9   ,' $       ,' $ Figure 13. Capacitance variations $0Y & S)  9'6 &LVV    &RVV     &UVV      4J Q& DocID028726 Rev 1      9'6 9 7/28 28 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 14. Normalized gate threshold voltage vs. temperature 9*6 WK QRUP $0Y ,' —$  Figure 15. Normalized on-resistance vs. temperature $0Y 5'6 RQ QRUP   ,' $ 9*6 9                8/28      7- ƒ& DocID028726 Rev 1      7- ƒ& STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit 9'' 9 Nȍ Nȍ Q)  P)  5/ P) 9*6 ,* &2167 9'' : 9L 9 9*0$; 9' 5*  —) '87 '87 9* Nȍ 3: Nȍ Nȍ 3: $0Y Figure 18. Test circuit for inductive load switching and diode recovery times $ $ '87 )$67 ',2'( % % $0Y Figure 19. Unclamped inductive load test circuit / $ ' * 6 9' / —+  —) %  ȍ  —) ' 9''  —)  —) 9'' ,' * 5* 6 9L '87 3Z $0Y $0Y Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform WRQ 9 %5 '66 WGRQ 9' WRII WU WGRII   ,'0 WI  ,' 9''   9'' 9'6  9*6 $0Y  DocID028726 Rev 1  $0Y 9/28 28 Package information 4 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 STD10NM60N, DPAK (TO-252) package information Figure 22. DPAK (TO-252) type A package outline B 10/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 6.60 1.00 R V2 5.25 0.20 0° 8° DocID028726 Rev 1 11/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 23. DPAK (TO-252) type C2 outline W\SH& 12/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 10. DPAK (TO-252) type C2 package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 5.33 6.10 6.60 6.70 5.50 2.90 REF 0.90 1.25 L3 L4 6.20 5.60 (L1) L2 5.46 0.51 BSC 0.60 0.80 L6 1.00 1.80 BSC Ɵ1 5° 7° 9° Ɵ2 5° 7° 9° V2 0° 8° DocID028726 Rev 1 13/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 24. DPAK (TO-252) type E package outline BW\SH( 14/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 11. DPAK (TO-252) type E mechanical data mm Dim. Min. A Typ. 2.18 Max. 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 1.27 L4 1.02 DocID028726 Rev 1 15/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 25. DPAK (TO-252) type A, C2, E recommended footprint (a) a. All dimensions are in millimeters 16/28 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 4.2 Package information STF10NM60N, TO-220FP package information Figure 26. TO-220FP package outline B5HYB.B% DocID028726 Rev 1 17/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 12. TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 18/28 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 4.3 Package information STP10NM60N, TO-220 package information Figure 27. TO-220 type A package outline BW\SH$B5HYB7 DocID028726 Rev 1 19/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 13. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 20/28 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028726 Rev 1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 4.4 Package information STU10NM60N, IPAK (TO-251) Figure 28. IPAK (TO-251) type A outline B,.BW\SH$BUHY DocID028726 Rev 1 21/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 14. IPAK (TO-251) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 22/28 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID028726 Rev 1 1.00 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Figure 29. IPAK (TO-251) type C package outline B,.BW\SH&BUHY DocID028726 Rev 1 23/28 28 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 15. IPAK (TO-251) type C package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 24/28 0.90 b4 5.23 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.90 1.00 1.20 L2 0.90 1.08 1.25 Ɵ1 3° 5° 7° Ɵ2 1° 3° 5° DocID028726 Rev 1 5.33 5.43 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 5 Packing information Packing information Figure 30. Tape for DPAK (TO-252) SLWFKHVFXPXODWLYH WROHUDQFHRQWDSHPP 7 3 7RSFRYHU WDSH 3 ' ( ) % . )RUPDFKLQHUHIRQO\ LQFOXGLQJGUDIWDQG UDGLLFRQFHQWULFDURXQG% : % $ 3 ' 8VHUGLUHFWLRQRIIHHG 5 %HQGLQJUDGLXV 8VHUGLUHFWLRQRIIHHG $0Y DocID028726 Rev 1 25/28 28 Packing information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 31. Reel for DPAK (TO-252) 7 5((/',0(16,216 PPPLQ $FFHVVKROH $WVO RWORFDWLRQ % ' & 1 $ )XOOUDGLXV *PHDVXUHGDWKXE 7DSHVORW LQFRUHIRU WDSHVWDUWPPPLQ ZLGWK $0Y Table 16. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 26/28 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base quantity 2500 P1 7.9 8.1 Bulk quantity 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID028726 Rev 1 18.4 22.4 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 6 Revision history Revision history Table 17. Document revision history Date Revision Changes 04-Dec-2015 1 First release. Part numbers previously included in the datasheet with DocID15764. DocID028726 Rev 1 27/28 28 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 28/28 DocID028726 Rev 1
STD10NM60N 价格&库存

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STD10NM60N
  •  国内价格
  • 1+5.90491
  • 10+5.68621
  • 100+5.03010
  • 500+4.89888

库存:40