STD110N8F6

STD110N8F6 N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features 7$%   Order code VDS RDS(on)max ID PTOT STD110N8F6 80 V 0.0065 Ω 80 A 167 W • Very low on-resistance • Very low gate charge  • High avalanche ruggedness • Low gate drive power loss '3$. Applications Figure 1. Internal schematic diagram • Switching applications Description '7$% This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube December 2014 This is information on a product in full production. DocID027274 Rev 1 1/16 www.st.com Contents STD110N8F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 DocID027274 Rev 1 STD110N8F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 72 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 167 W EAS Single pulse avalanche energy 180 mJ TJ Operating junction temperature Tstg Storage temperature IDM (1) PTOT (2) °C -55 to 175 °C 1. Pulse width is limited by safe operating area 2. Starting TJ = 25 °C, ID = 55 A, VDD = 60 V Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max. 0.9 °C/W Thermal resistance junction-pcb max. 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. DocID027274 Rev 1 3/16 16 Electrical characteristics 2 STD110N8F6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero-gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 100 µA VDS = 0, VGS = +20 V 100 nA 4.5 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance 2.5 VGS = 10 V, ID = 40 A 0.0056 0.0065 Ω Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 40 V, f = 1 MHz, VGS = 0 VDD = 40 V, ID = 80 A, VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 9130 - pF - 320 - pF - 225 - pF - 150 - nC - 40 - nC - 30 - nC Min. Typ. Max. Unit - 24 - ns - 61 - ns - 162 - ns - 48 - ns Table 6. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 40 V, ID = 55 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) Fall time DocID027274 Rev 1 STD110N8F6 Electrical characteristics Table 7. Source-drain diode Symbol VSD(1) trr Parameter Test conditions Forward on voltage ISD = 80 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15) Min. Typ. - Max. Unit 1.2 V - 30 ns - 34 nC - 2.3 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027274 Rev 1 5/16 16 Electrical characteristics 2.1 STD110N8F6 Electrical characteristics (curves) Figure 2. Safe operating area ,' $ Figure 3. Thermal impedance *,3*)65 . *,3*)65 į  2 S /L HU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D ' 6 LV    RQ   —V      PV 6LQJOHSXOVH 7M ƒ& 7F ƒ& 6LQJOHSXOVH    PV 9'69  Figure 4. Output characteristics  ,' $ 9*6 9 ,' $ WSV *,3*/0 9'6 9  9     Figure 5. Transfer characteristics *,3*/0              9       Figure 6. Gate charge vs gate-source *,3*)65 9*6 9 9'' 9 ,' $    9'69     9*69 Figure 7. Static drain-source on-resistance *,3*)65 5'6RQ Pȍ 9*6 9           6/16      4JQ&   DocID027274 Rev 1     ,'$ STD110N8F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature *,3*/0 & S) *,3*/0 9*6WK QRUP ,' —$   &LVV    &RVV &UVV          9'69 Figure 10. Normalized on-resistance *,3*/0 5'6RQ       7-ƒ& Figure 11. Normalized V(BR)DSS vs temperature *,3*/0 9%5'66 QRUP QRUP 9*6 9 ,' P$                7-ƒ&       7-ƒ& Figure 12. Drain-source diode forward characteristics *,3*/0 96' 9  7- ƒ&    7- ƒ& 7- ƒ&         ,6'$ DocID027274 Rev 1 7/16 16 Test circuits 3 STD110N8F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID027274 Rev 1 10% AM01473v1 STD110N8F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027274 Rev 1 9/16 16 Package information STD110N8F6 Figure 19. DPAK (TO-252) type A drawing B5 10/16 DocID027274 Rev 1 STD110N8F6 Package information Table 8. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID027274 Rev 1 11/16 16 Package information STD110N8F6 Figure 20. DPAK (TO-252) footprint (a) )3B5 a. All dimensions are in millimeters 12/16 DocID027274 Rev 1 STD110N8F6 5 Packing information Packing information Figure 21. Tape for DPAK (TO-252) SLWFKHVFXPXODWLYH WROHUDQFHRQWDSHPP 7 3 7RSFRYHU WDSH 3 ' ( ) % . )RUPDFKLQHUHIRQO\ LQFOXGLQJGUDIWDQG UDGLLFRQFHQWULFDURXQG% : % $ 3 ' 8VHUGLUHFWLRQRIIHHG 5 %HQGLQJUDGLXV 8VHUGLUHFWLRQRIIHHG $0Y DocID027274 Rev 1 13/16 16 Packing information STD110N8F6 Figure 22. Reel for DPAK (TO-252) 7 5(( /',0(16,216 PPPLQ $FFHVVKROH $WVO RWORFDWLRQ % ' & 1 $ )XOOUDGLXV *PHDVXUHGDWKXE 7DSHVORW LQFRUHIRU WDSHVWDUWPPPLQ ZLGWK $0Y Table 9. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/16 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID027274 Rev 1 18.4 22.4 STD110N8F6 6 Revision history Revision history Table 10. Document revision history Date Revision 15-Dec-2014 1 Changes First release. DocID027274 Rev 1 15/16 16 STD110N8F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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