STD11N65M5

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 Datasheet N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ M5 Power MOSFETs in a DPAK, D²PAK, TO-220FP and TO-220 packages TAB Features TAB 1 3 DPAK D2 PAK 2 3 1 Order code STD11N65M5 2 3 1 2 3 STF11N65M5 TO-220 TO-220FP Tjmax. RDS(on)max. ID 0.48 Ω 9A STB11N65M5 TAB 1 VDS @ D(2, TAB) G(1) 710 V STP11N65M5 • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications S(3) AM01475v1_noZen • Switching applications Description Product status STB11N65M5 These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. STD11N65M5 STF11N65M5 STP11N65M5 DS8920 - Rev 3 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol D2PAK Parameter TO-220FP DPAK Unit TO-220 VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 9 ID Drain current (continuous) at TC = 100 °C 5.6 5.6 (1) A IDM (2) Drain current (pulsed) 36 36 (1) A PTOT Total dissipation at TC = 25 °C 85 25 W dv/dt (3) Peak diode recovery voltage slope 9 15 2500 leads to external heat sink (t = 1 s; Tc = 25 °C) Tj Operating junction temperature range Tstg -55 to 150 Storage temperature range A V/ns Insulation withstand voltage (RMS) from all three VISO (1) V °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 9 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. Table 2. Thermal data Symbol Value Parameter D2PAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) DPAK TO-220FP TO-220 5.0 1.47 1.47 Thermal resistance junction-pcb 62.5 30 Unit °C/W °C/W 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol DS8920 - Rev 3 Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 2 A 130 mJ page 2/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source Breakdown voltage Test condition ID = 1 mA, VGS = 0 V Min. Typ. Max. 650 Unit V VGS = 0 V, VDS = 650 V 1 µA VGS = 0 V, VDS = 650 V, TC = 125 °C(1) 100 µA ±100 nA 4 5 V 0.43 0.48 Ω Typ. Max. Unit - pF IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 4.5 A 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Equivalent capacitance time related Co(er) (2) Equivalent capacitance energy related Test condition Min. 644 VDS = 100 V, f = 1 MHz, VGS = 0 V - 18 2.5 - 55 - pF - 17 - pF - 5 - Ω - nC VDS = 0 to 520 V, VGS = 0 V Rg Gate input resistance f = 1 MHz open drain Qg Total gate charge VDD = 520 V, ID = 4.5 A, Qgs Gate-source charge Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 20. Test circuit for gate charge behavior) 17 - 4.6 8.5 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Test condition Min. Typ. td(v) Voltage delay time VDD = 400 V, ID = 7.5 A, 23 tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V 10 Crossing time (see Figure 21. Test circuit for inductive load switching and diode recovery times and Figure 24. Switching time waveform) tc(off) tf(i) DS8920 - Rev 3 Parameter Fall time - 13 Max. Unit - ns 13.5 page 3/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test condition Source-drain current Min. Typ. 9 - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 9 A, VGS = 0 V trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 100 V (see Figure 21. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 100 V, Tj = 150 °C (see Figure 21. Test circuit for inductive load switching and diode recovery times) 36 - - - Max. 1.5 Unit A V 232 ns 2 μC 17.5 A 328 ns 2.8 μC 17 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS8920 - Rev 3 page 4/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK ID (A) 100 10µs 100µs Tj=150°C Tc=25°C 10-1 Single pulse 10-2 10-1 101 100 100 1ms 10ms 102 10-1 10-2 10-5 VDS(V) Figure 3. Safe operating area for TO-220FP 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220FP AM15399v1 ID (A) n) S( o O pe m ratio ite n d by in th m is ax ar RD ea is 101 10µs 100µs Li 100 GC20460 K O Li per m at ite io d ni by n m this ax a R rea D S( is on ) 101 Figure 2. Thermal impedance DPAK AM15398v1 1ms 10ms Tj=150°C Tc=25°C 10-1 Single pulse 10-2 10-1 100 101 102 VDS(V) Figure 5. Safe operating area for TO-220 and D2PAK AM15400v1 10µs 100µs 1ms Li 100 O pe m ratio ite n d by in th m is ax ar R ea i D S( s on ) ID (A) 101 Figure 6. Thermal impedance for TO-220 and D2PAK 10ms 10-1 10-2 10-1 DS8920 - Rev 3 Tj=150°C Tc=25°C Single pulse 100 101 102 VDS(V) page 5/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical characteristics curves Figure 8. Output characterisics ID (A) Figure 9. Transfer characteristics AM15401v1 VGS=10V 16 8V 14 12 10 10 8 8 6 6 4 4 2 2 0 VDS=25V 14 7V 12 AM15402v1 ID (A) 16 6V 0 5 10 25 VDS(V) 20 15 Figure 10. Gate charge vs gate-source voltage AM15403v1 VGS (V) 12 VDD=520V VDS (V) ID=4.5A 500 10 400 3 4 5 7 6 9 VGS(V) 8 Figure 11. Static drain-source on resistance AM15404v1 RDS(on) (W) 0.55 VGS=10V 0.5 0.45 8 300 0.4 6 200 4 100 2 0 0 0 5 10 15 20 0 Qg (nC) AM15405v1 1000 0.3 0.25 0 1 2 3 4 5 6 7 ID(A) 8 Figure 13. Output capacitance stored energy Figure 12. Capacitance variations C (pF) 0.35 Ciss AM15406v1 Eoss (µJ) 3.5 3 2.5 100 2 1.5 Coss 10 Crss 1 0.1 DS8920 - Rev 3 1 10 100 VDS(V) 1 0.5 0 0 200 400 600 VDS(V) page 6/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Electrical characteristics curves Figure 14. Normalized on-resistance vs temperature AM05460v1 RDS(on) (norm) 2.1 Figure 15. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 VGS = 10 V ID = 4.5 A VDS = VGS ID = 250 µA 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.5 -50 -25 25 0 50 0.70 -50 -25 TJ(°C) 75 100 Figure 16. Drain-source diode forward characteristics AM05461v1 VSD (V) 0 25 50 75 100 TJ(°C) Figure 17. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 2 4 6 8 0.92 -50 -25 10 ISD(A) 0 25 50 75 100 TJ(°C) Figure 18. Switching energy vs gate resistance AM15407v1 E (µJ) VDD=400V VGS=10V ID=6A 100 Eon 80 60 40 Eoff 20 0 DS8920 - Rev 3 0 5 10 15 20 25 30 35 40 45 RG(W) page 7/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Test circuits 3 Test circuits Figure 19. Test circuit for resistive load switching times Figure 20. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD IG= CONST VGS RG 1 kΩ 100 nF RL VGS 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A B L A B 3.3 µF D G + VD 100 µH fast diode B Figure 22. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 23. Unclamped inductive waveform V(BR)DSS Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay -off IDM Vgs 90%Vgs on ID Vgs(I(t )) VDD VDD 10%Vds 10%Id Vds Trise AM01472v1 DS8920 - Rev 3 Tfall Tcross --over AM05540v2_for_M5 page 8/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS8920 - Rev 3 page 9/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 25. D²PAK (TO-263) type A package outline 0079457_25 DS8920 - Rev 3 page 10/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS8920 - Rev 3 Typ. 0.40 0° 8° page 11/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 D²PAK (TO-263) type A package information Figure 26. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS8920 - Rev 3 page 12/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 D²PAK packing information 4.2 D²PAK packing information Figure 27. D²PAK tape outline DS8920 - Rev 3 page 13/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 D²PAK packing information Figure 28. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS8920 - Rev 3 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 14/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type A package information 4.3 DPAK (TO-252) type A package information Figure 29. DPAK (TO-252) type A package outline 0068772_A_25 DS8920 - Rev 3 page 15/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type A package information Table 10. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS8920 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 16/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type C2 package information 4.4 DPAK (TO-252) type C2 package information Figure 30. DPAK (TO-252) type C2 package outline 0068772_C2_25 DS8920 - Rev 3 page 17/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type C2 package information Table 11. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS8920 - Rev 3 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 18/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type E package information 4.5 DPAK (TO-252) type E package information Figure 31. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS8920 - Rev 3 page 19/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) type E package information Table 12. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 32. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS8920 - Rev 3 page 20/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) packing information 4.6 DPAK (TO-252) packing information Figure 33. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS8920 - Rev 3 page 21/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 DPAK (TO-252) packing information Figure 34. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 13. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS8920 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 22/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 TO-220FP package information 4.7 TO-220FP package information Figure 35. TO-220FP package outline 7012510_Rev_12_B DS8920 - Rev 3 page 23/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 TO-220FP package information Table 14. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS8920 - Rev 3 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 24/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 TO-220 type A package information 4.8 TO-220 type A package information Figure 36. TO-220 type A package outline 0015988_typeA_Rev_21 DS8920 - Rev 3 page 25/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 TO-220 type A package information Table 15. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS8920 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 26/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Ordering information 5 Ordering information Table 16. Order codes Order code Package STB11N65M5 D2PAK STD11N65M5 DPAK STF11N65M5 STP11N65M5 DS8920 - Rev 3 Marking 11N65M5 TO-220FP TO-220 Packing Tape and reel Tube page 27/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Revision history Table 17. Document revision history Date Version 23-Feb-2012 1 Changes First release. – Minor text changes in cover page – Added IPAK packages 03-Dec-2012 2 – Added Section 2.1: Electrical characteristics (curves) – Updated Section 5: Packaging mechanical data – Modified: note 2 on Table 2 – Updated: mechanical data for TO-220FP package The part number STU11N65M5 has been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 02-May-2018 3 Updated title and features in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics, Section 2.1 Electrical characteristics curves and Section 4 Package information. Minor text changes. DS8920 - Rev 3 page 28/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.6 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.8 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 DS8920 - Rev 3 page 29/30 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS8920 - Rev 3 page 30/30