STD12NF06L-1

STD12NF06L-1 N-channel 60 V, 0.07 Ω typ.,12 A, STripFET™ II Power MOSFET in an IPAK package Datasheet - production data Features    ,3$. Order code VDS RDS(on) max. ID STD12NF06L-1 60 V 0.09 Ω 12 A • Exceptional dv/dt capability • Low gate charge Figure 1. Internal schematic diagram Applications • Switching applications '7$% Description * 6 $0Y This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Table 1. Device summary Order code Marking Package Packaging STD12NF06L-1 D12NF06L IPAK Tube November 2014 This is information on a product in full production. DocID026644 Rev 3 1/14 www.st.com Contents STD12NF06L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 DocID026644 Rev 3 STD12NF06L-1 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 16 V ID Drain current (continuous) at TC = 25 °C 12 A ID Drain current (continuous) at TC = 100 °C 8.5 A IDM(1) Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 30 W Derating factor 0.2 W/°C dv/dt(2) Peak diode recovery voltage slope 15 V/ns EAS(3) Single pulse avalanche energy 100 mJ -55 to 175 °C Value Unit 5 °C/W 100 °C/W Tstg Storage temperature TJ Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDS ≤ 40 V, TJ ≤ TJMAX 3. Starting TJ = 25 °C, ID = 6 A, VDD = 30 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. DocID026644 Rev 3 3/14 14 Electrical characteristics 2 STD12NF06L-1 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 250 μA, Min. Typ. Max. 60 Unit V VGS = 0, VDS = 60 1 µA VGS = 0, VDS = 60 TC = 125 °C 10 µA ±100 nA 2 V IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 VGS = ± 16 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on-resistance VGS = 10 V, ID = 6 A 0.07 0.09 Ω RDS(on) VGS = 5 V, ID = 6 A 0.08 0.10 Ω Typ. Max. Unit 1 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS = 25 V, f = 1 MHz, VGS = 0 350 pF 75 pF 30 pF 7.5 VDD = 48 V, ID = 12 A VGS = 5 V (see Figure 14) 10 nC 2.5 nC 3.0 nC Table 6. Switching times Symbol td(on) tr td(off) tf 4/14 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 30 V, ID = 6 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 13) Fall time DocID026644 Rev 3 Min. Typ. Max. Unit 10 ns 35 ns 20 ns 13 ns STD12NF06L-1 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM VSD (1) (2) Parameter Test conditions Max. Unit Source-drain current 12 A Source-drain current (pulsed) 48 A 1.5 V Forward on voltage ISD = 12 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD = 16 V, TJ = 150 °C (see Figure 15) Min. Typ. 50 ns 65 nC 2.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID026644 Rev 3 5/14 14 Electrical characteristics 2.1 STD12NF06L-1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Tj=175°C Tc=25°C Single Pulse Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized V(BR)DSS vs. temperature Figure 7. Static drain-source on-resistance V(BR)DSS 6/14 ID= 250μA DocID026644 Rev 3 STD12NF06L-1 Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on-resistance vs. temperature VGS= 10 V ID=6 A VDS= VGS ID=250 μA Figure 12. Source-drain diode forward characteristics DocID026644 Rev 3 7/14 14 Test circuit 3 STD12NF06L-1 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VDD IG=CONST VD VGS 100Ω Vi=20V=VGMAX RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. L=100μH S 3.3 μF B B B 25 Ω VD 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 DocID026644 Rev 3 10% AM01473v1 STD12NF06L-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 19. IPAK (TO-251) type A drawing 0068771_L DocID026644 Rev 3 9/14 14 Package mechanical data STD12NF06L-1 Table 8. IPAK (TO-251) type A mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 10/14 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID026644 Rev 3 1.00 STD12NF06L-1 Package mechanical data Figure 20. IPAK (TO-251) type C drawing 7\SH&5HY/ DocID026644 Rev 3 11/14 14 Package mechanical data STD12NF06L-1 Table 9. IPAK (TO-251) type C mechanical data mm Dim. min. typ. max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 12/14 0.90 b4 5.23 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° DocID026644 Rev 3 5.33 5.43 STD12NF06L-1 5 Revision history Revision history Table 10. Document revision history Date Revision 03-Jul-2014 1 Initial release.The part number STD12NF06L-1 previously included in datasheet with docID8179. 15-Oct-2014 2 Updated Section 4: Package mechanical data. 3 Updated title in cover page and Table 4: On/off states. Updated Figure 2: Safe operating area ,Figure 3: Thermal impedance,.Figure 10: Normalized gate threshold voltage vs. temperature and Figure 11: Normalized on-resistance vs. temperature. Minor text changes. 14-Nov-2014 Changes DocID026644 Rev 3 13/14 14 STD12NF06L-1 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 14/14 DocID026644 Rev 3