STD12NF06T4

STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package Features TAB 2 3 1 • • • DPAK Order code VDS RDS(on) max. ID PTOT STD12NF06T4 60 V 0.1 Ω 12 A 30 W Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, TAB) Applications • G(1) Switching applications Description S(3) AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD12NF06T4 Product summary Order code STD12NF06T4 Marking D12NF06 Package DPAK Packing Tape and reel DS2577 - Rev 8 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STD12NF06T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage 60 V Drain-gate voltage (RGS = 20 kΩ) 60 V Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 12 Drain current (continuous) at TC = 100 °C 8.5 IDM(1) Drain current (pulsed) 48 A PTOT Total power dissipation at TC = 25 °C 30 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns EAS(3) Single pulse avalanche energy 140 mJ -55 to 175 °C Value Unit VDS VDGR VGS ID Tstg TJ Parameter Storage temperature range Operating junction temperature range A 1. Pulse width is limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 200 A/ns, VDD = 80% V(BR)DSS 3. Starting TJ = 25 °C, ID = 6 A, VDD = 30 V. Table 2. Thermal data Symbol DS2577 - Rev 8 Parameter RthJC Thermal resistance, junction-to-case 5 RthJA Thermal resistance, junction-ambient 100 °C/W page 2/15 STD12NF06T4 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V, TC = 125 °C(1) 10 IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 80 100 mΩ Min. Typ. Max. Unit - 5 S - 315 pF - 70 pF - 30 pF - 10 - 3.0 nC - 3.5 nC Min. Typ. Max. Unit - 7 - ns - 18 - ns - 17 - ns - 6 - ns 2 µA 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter gfs Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 15 V, ID = 6 A VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 48 V, ID = 20 A, VGS = 10 V, RG = 4.7 Ω (see Figure 14. Test circuit for gate charge behavior) 12 nC Table 5. Switching times Symbol td(on) tr td(off) tf DS2577 - Rev 8 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30 V, ID = 12 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times) page 3/15 STD12NF06T4 Electrical characteristics Table 6. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 12 A ISDM Source-drain current (pulsed) - 48 A VSD(2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.3 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 50 ns Qrr Reverse recovery charge VDD = 30 V, TJ = 150 °C - 65 nC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 3.5 A (1) 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS2577 - Rev 8 page 4/15 STD12NF06T4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Transconductance Figure 6. Typical drain-source on-resistance DS2577 - Rev 8 page 5/15 STD12NF06T4 Electrical characteristics (curves) Figure 7. Typical gate charge characteristics Figure 8. Typical capacitance characteristics Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Typical reverse diode forward characteristics DS2577 - Rev 8 Figure 12. Normalized breakdown voltage vs temperature page 6/15 STD12NF06T4 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS2577 - Rev 8 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/15 STD12NF06T4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type C package information Figure 19. DPAK (TO-252) type C package outline 0068772_C_31 DS2577 - Rev 8 page 8/15 STD12NF06T4 DPAK (TO-252) type C package information Table 7. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.15 5.40 5.65 E 6.50 6.60 6.70 E1 4.70 4.85 5.00 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 0.90 1.25 0.51 BSC 0.60 L6 DS2577 - Rev 8 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 9/15 STD12NF06T4 DPAK (TO-252) type C package information Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_31 DS2577 - Rev 8 page 10/15 STD12NF06T4 DPAK (TO-252) packing information 4.2 DPAK (TO-252) packing information Figure 21. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS2577 - Rev 8 page 11/15 STD12NF06T4 DPAK (TO-252) packing information Figure 22. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 8. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS2577 - Rev 8 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 12/15 STD12NF06T4 Revision history Table 9. Document revision history DS2577 - Rev 8 Date Revision Changes 09-Sep-2004 3 Complete document 07-Aug-2006 4 The document has been reformatted 19-Feb-2007 5 Typo mistake on page 1 15-Apr-2009 6 Table 1: Device summary has been updated Mechanical data updated 26-Nov-2009 7 Updated Qrr in Table 7: Source drain diode. 06-Oct-2022 8 The part number STD12NF06 has been removed and the document has been updated accordingly. page 13/15 STD12NF06T4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS2577 - Rev 8 page 14/15 STD12NF06T4 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS2577 - Rev 8 page 15/15