STD134N4F7AG

STD134N4F7AG Automotive-grade N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Figure 1: Internal schematic diagram Order code VDS RDS(on) max. ID PTOT STD134N4F7AG 40 V 3.5 mΩ 80 A 134 W      AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications D(2, TAB)  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STD134N4F7AG 134N4F7 DPAK Tape and reel December 2016 DocID030109 Rev 1 This is information on a product in full production. 1/16 www.st.com Contents STD134N4F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/16 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 Revision history ............................................................................ 15 DocID030109 Rev 1 STD134N4F7AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 80 Drain current (continuous) at Tcase = 100 °C 80 IDM(2) Drain current (pulsed) 320 A PTOT Total dissipation at Tcase = 25 °C 134 W EAS(3) Single pulse avalanche energy 325 mJ -55 to 175 °C Value Unit ID(1) Tstg Storage temperature range TJ Operating junction temperature range A Notes: (1)Current (2)Pulse is limited by package width is limited by safe operating area (3)Starting Tj = 25 °C, ID = 40 A, VDD = 20 V Table 3: Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Thermal resistance junction-case 1.12 Thermal resistance junction-pcb 50 °C/W Notes: (1)When mounted on a 1-inch² FR-4, 2 Oz copper board. DocID030109 Rev 1 3/16 Electrical characteristics 2 STD134N4F7AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 1 IDSS Zero gate voltage drain current VGS = 0 V, VDS = 40 V, Tcase = 125 °C(1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 40 A 2.5 3.5 mΩ Min. Typ. Max. Unit - 2790 - - 890 - - 60 - - 41 - - 15 - - 11 - Min. Typ. Max. - 18 - - 17.5 - - 26 - - 13 - 2 µA Notes: (1)Defined by design, not subject to production test. Symbol Parameter Table 5: Dynamic Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 20 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") DocID030109 Rev 1 Unit ns STD134N4F7AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions ISD(1) Source-drain current ISDM(1) Source-drain current (pulsed) VSD(2) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min. Typ. Max. Unit - 80 A - 320 A VGS = 0 V, ISD = 80 A - 1.2 V ISD = 80 A, di/dt = 100 A/µs, VDD = 32 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 37 ns - 28.5 nC - 1.5 A Notes: (1)Current (2)Pulse is limited by package test: pulse duration = 300 µs, duty cycle 1.5% DocID030109 Rev 1 5/16 Electrical characteristics 2.1 6/16 STD134N4F7AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID030109 Rev 1 STD134N4F7AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID030109 Rev 1 7/16 Test circuits 3 8/16 STD134N4F7AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID030109 Rev 1 STD134N4F7AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID030109 Rev 1 9/16 Package information 4.1 STD134N4F7AG DPAK (TO-252) type A2 package information Figure 19: DPAK (TO-252) type A2 package outline 0068772_type-A2_rev21 10/16 DocID030109 Rev 1 STD134N4F7AG Package information Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID030109 Rev 1 8° 11/16 Package information STD134N4F7AG Figure 20: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm) 12/16 DocID030109 Rev 1 STD134N4F7AG 4.2 Package information DPAK (TO-252) packing information Figure 21: DPAK (TO-252) tape outline DocID030109 Rev 1 13/16 Package information STD134N4F7AG Figure 22: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 14/16 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID030109 Rev 1 18.4 22.4 STD134N4F7AG 5 Revision history Revision history Table 10: Document revision history Date Revision 05-Dec-2016 1 Changes First release DocID030109 Rev 1 15/16 STD134N4F7AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 16/16 DocID030109 Rev 1