STD1NK80Z-1

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 < 16 < 16 < 16 ■ ■ ■ ■ ■ ■ Ω Ω Ω Ω ID Pw 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W 2 TYPICAL RDS(on) = 13Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 TO-92 (Ammopack) 3 3 DPAK 3 SOT-223 2 1 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 2 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ AC ADAPTORS AND BATTERY CHARGERS ■ SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STQ1NK80ZR-AP Q1NK80ZR TO-92 AMMOPAK STN1NK80Z N1NK80Z SOT-223 TAPE & REEL STD1NK80ZT4 D1NK80Z DPAK TAPE & REEL STD1NK80Z-1 D1NK80Z IPAK TUBE Rev. 3 January 2006 1/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value TO-92 VDS VDGR VGS SOT-223 Unit DPAK/IPAK Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.3 0.25 1.0 A ID Drain Current (continuous) at TC = 100°C 0.19 0.16 0.63 A IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C 5 Derating Factor VESD(G-S) dv/dt (1) Tj Tstg A 3 2.5 45 W 0.025 0.02 0.36 W /°C Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1000 V 4.5 V/ns -55 to 150 °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 640 Table 4: Thermal Data Rthj-case Rthj-amb(#) Rthj-lead Tl TO-92 SOT-223 DPAK/IPAK Unit -- -- 2.78 °C/W 120 50 100 °C/W Thermal Resistance Junction-lead Max 40 -- -- °C/W Maximum Lead Temperature For Soldering Purpose 260 -- 300 °C Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max (#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 1 A 50 mJ Table 6: GATE-SOURCE ZENER DIODE Symbol Parameter BVGSO Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. 800 Unit Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A 13 16 Ω Typ. Max. Unit 3 V Table 8: Dynamic Symbol gfs (1) Parameter Test Conditions Min. Forward Transconductance VDS = 15 V, ID = 0.5 A 0.8 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 160 26 6.7 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 640V 9.5 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (see Figure 21) 8 30 22 55 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640V, ID = 1.0 A, VGS = 10V (see Figure 24) 7.7 1.4 4.5 nC nC nC Ciss Coss Crss Coss eq. (3) Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see Figure 22) 365 802 4.4 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see Figure 22) 388 802.7 4.6 ns nC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 1.0 5 A A 1.6 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 3: Safe Operating Area for SOT-223 Figure 6: Thermal Impedance for SOT-223 Figure 4: Safe Operating Area for TO-92 Figure 7: Thermal Impedance for TO-92 Figure 5: Safe Operating Area for IPAK-DPAK Figure 8: Thermal Impedance for DPAK-IPAK 4/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 15: Normalized Gate Thereshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Diode Forward Characteristics Figure 19: Normalized BVdss vs Temperature Figure 17: Avalanche Energy vs Starting Tj 6/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 20: Unclamped Inductive Load Test Circuit Figure 23: Unclamped Inductive Wafeform Figure 21: Switching Times Test Circuit For Resistive Load Figure 24: Gate Charge Test Circuit Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 9/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 TO-92 MECHANICAL DATA mm. inch DIM. MIN. MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 10/15 TYP 5° 5° STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 11/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 12/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 10: Revision History Date Revision 08-Jun-2005 06-Sep-2005 16-Jan-2006 1 2 3 14/15 Description of Changes First Release Inserted Ecopack indication Corrected value on Table 3 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2006 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15