STD20NF20

STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID PW STD20NF20 200 V < 0.125 Ω 18 A 110 W STF20NF20 200 V < 0.125 Ω 18 A 30 W STP20NF20 200 V < 0.125 Ω ■ Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 18 A 110 W 3 1 3 2 1 2 TO-220 TO-220FP 3 1 DPAK Application ■ Switching applications Figure 1. Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD20NF20 20NF20 DPAK Tape and reel STF20NF20 20NF20 TO-220FP Tube STP20NF20 20NF20 TO-220 Tube December 2009 Doc ID 13154 Rev 4 1/15 www.st.com 15 Contents STD20NF20, STF20NF20, STP20NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 200 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 18 A ID Drain current (continuous) at TC = 100 °C 11 A IDM (1) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 110 30 W Derating factor 0.72 0.2 W/°C dv/dt (2) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) Tstg Storage temperature Tj 15 V/ns 2500 -55 to 175 V °C Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS Table 3. Symbol Thermal data Parameter TO-220 DPAK TO-220FP Unit Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1) 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 1. When mounted on 1inch² FR-4, 2 Oz copper board. Table 4. Symbol Avalanche characteristics Parameter Max value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 18 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 110 mJ Doc ID 13154 Rev 4 3/15 Electrical characteristics 2 STD20NF20, STF20NF20, STP20NF20 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10 A Table 6. Symbol Test conditions Typ. Max. 200 Unit V 1 10 µA µA ±100 nA 3 4 V 0.10 0.125 Ω Min. Typ. Max. Unit - 13 - 940 197 30 2 Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 td(on) tr td(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 100 V, ID = 10 A, RG= 4.7 Ω VGS = 10 V (see Figure 15) - 15 30 40 10 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 160 V, ID = 20 A, VGS = 10 V (see Figure 16) - 28 5.6 14.5 VDS = 25 V, ID= 10 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/15 Min. Doc ID 13154 Rev 4 S pF pF pF ns ns ns ns 39 nC nC nC STD20NF20, STF20NF20, STP20NF20 Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD trr Qrr IRRM trr Qrr IRRM ISD = 20 A, VGS = 0 Reverse recovery time ISD = 20 A, di/dt = 100A/µs Reverse recovery charge VDD = 50 V Reverse recovery current (see Figure 20) Reverse recovery time ISD = 20 A, di/dt = 100 A/µs Reverse recovery charge VDD = 50 V, Tj = 150 °C Reverse recovery current (see Figure 20) Min. Typ. Max. Unit - 18 72 A A - 1.6 V - 155 775 10 ns nC A - 183 1061 11.6 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Doc ID 13154 Rev 4 5/15 Electrical characteristics STD20NF20, STF20NF20, STP20NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, DPAK Figure 3. Thermal impedance area for TO-220, DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 Figure 8. Electrical characteristics Transconductance Figure 9. Static drain-source on resistance AM03979v1 GFS (S) TJ=-50°C 19 17 TJ=25°C 15 13 TJ=175°C 11 9 7 3 9 6 12 15 18 ID(A) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature AM03980v1 VGS(th) (norm) 1.10 Figure 13. Normalized on resistance vs temperature RDS(on) (norm) 2.4 AM03981v1 2.2 1.00 2.0 0.90 1.8 0.80 1.6 0.70 1.4 1.2 0.60 1.0 0.50 0.8 0.6 0.40 -50 0 50 100 150 TJ(°C) Doc ID 13154 Rev 4 -50 0 50 100 150 TJ(°C) 7/15 Electrical characteristics STD20NF20, STF20NF20, STP20NF20 Figure 14. Source-drain diode forward characteristics VSD (V) AM03982v1 TJ=-50°C 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 3 8/15 6 9 12 15 18 ISD(A) Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 13154 Rev 4 10% AM01473v1 9/15 Package mechanical data 4 STD20NF20, STF20NF20, STP20NF20 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 13154 Rev 4 11/15 Package mechanical data STD20NF20, STF20NF20, STP20NF20 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/15 Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MAX. MAX. K0 W MIN. 330 B T TAPE MECHANICAL DATA inch MAX. 1.574 16.3 0.618 0.641 Doc ID 13154 Rev 4 13/15 Revision history 6 STD20NF20, STF20NF20, STP20NF20 Revision history Table 8. 14/15 Revision history Date Revision Changes 25-Jan-2007 1 First release 20-Mar-2007 2 Typo mistake in first page (order codes) 27-Apr-2007 3 Updates on Table 6: Dynamic 10-Dec-2009 4 Modified device summary on first page Doc ID 13154 Rev 4 STD20NF20, STF20NF20, STP20NF20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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