STD2HNK60Z, STD2HNK60Z-1
Datasheet
N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH Power MOSFETs in
DPAK and IPAK packages
Features
Order codes
TAB
STD2HNK60Z
TAB
STD2HNK60Z-1
3
1
12
DPAK
3
IPAK
•
•
•
•
VDS
RDS(on) max.
ID
600 V
4.8 Ω
2A
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Applications
D(2, TAB)
•
Switching applications
Description
G(1)
S(3)
AM01476v1_tab
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH technology by STMicroelectronics, an optimization
of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for
the most demanding applications.
Product status links
STD2HNK60Z
STD2HNK60Z-1
Product summary
Order code
STD2HNK60Z
Marking
D2HNK60Z
Package
DPAK
Packing
Tape and reel
Order code
STD2HNK60Z-1
Marking
D2HNK60Z
Package
IPAK
Packing
Tube
DS3646 - Rev 7 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STD2HNK60Z, STD2HNK60Z-1
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
±30
V
Drain current (continuous) at TC = 25 °C
2.0
Drain current (continuous) at TC = 100 °C
1.26
ID
A
IDM (1)
Drain current (pulsed)
8
A
PTOT
Total power dissipation at TC = 25 °C
45
W
ESD
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
2
kV
4.5
V/ns
dv/dt(2)
TSTG
TJ
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
-55 to 150
°C
°C
1. Pulse width limited by safe operating area.
2. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
RthJB
(1)
Thermal resistance, junction-to-board
Value
DPAK
IPAK
°C/W
2.77
100
50
Unit
°C/W
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
DS3646 - Rev 7
Parameter
IAR
Avalanche current, repetitive or not repetitive (tp limited by TJ max)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V)
Value
Unit
2
A
120
mJ
page 2/21
STD2HNK60Z, STD2HNK60Z-1
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
Min.
VGS = 0 V, ID = 1 mA
Typ.
600
Zero gate voltage drain current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50 μA
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 1 A
VGS = 0 V, VDS = 600 V, TC = 125 °C
Unit
V
VGS = 0 V, VDS = 600 V
IDSS
Max.
1
(1)
50
μA
±10
μA
3.75
4.5
V
3.5
4.8
Ω
Min.
Typ.
Max.
Unit
-
280
pF
-
38
pF
-
7
pF
pF
3
1. Specified By Design – Not tested in production.
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Coss eq.(1)
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
30
Qg
Total gate charge
VDD = 480 V, ID = 2 A,
-
11
Qgs
Gate-source charge
-
2.25
nC
Qgd
Gate-drain charge
VGS = 0 to 10 V (see Figure 14. Test
circuit for gate charge behavior)
-
6
nC
VDS = 25 V, f = 1 MHz, VGS = 0 V
15 (2)
nC
1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
2. Specified By Design – Not tested in production.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS3646 - Rev 7
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 300 V, ID = 1 A,
-
10
-
ns
Rise time
RG = 4.7 Ω , VGS = 10 V
-
30
-
ns
Turn-off delay time
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time waveform)
-
23
-
ns
-
50
-
ns
Fall time
page 3/21
STD2HNK60Z, STD2HNK60Z-1
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
ISDM
(1)
VSD (2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
2
A
Source-drain current (pulsed)
-
8
A
-
1.6
V
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VGS = 0 V, ISD = 2 A
-
178
ns
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
445
nC
-
5
A
ISD = 2 A, di/dt = 100 A/μs, VDD = 20 V
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/μs,
-
200
ns
Qrr
Reverse recovery charge
VDD = 20 V, TJ = 150 °C
-
500
nC
IRRM
Reverse recovery current
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
5
A
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS3646 - Rev 7
page 4/21
STD2HNK60Z, STD2HNK60Z-1
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
ID
(A)
Figure 2. Thermal impedance
GADG280920211324SOA
K
IDM
GADG280920211324ZTH
duty=0.5
on
)
2
DS
(
O
is pera
lim tio
ite n i
db nt
y R his
a
rea
tp=10µs
100
tp=100µs
10 -1
RDS(on) max.
101
02
V(BR)DSS
TC = 25 °C
TJ ≤ 150 °C
single pulse
10-1
100
05
tp=1ms
0.01
Zth = KRthJ-c
duty = tp / T
Single pulse
tp=10ms
VDS (V)
102
tp
10
T
-2
10
-5
10
-4
10
-3
10 -2
tp (s)
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Normalized V(BR)DSS vs temperature
Figure 6. Static drain-source on-resistance
V(BR)DSS
(norm.)
1.10
GADG280920211325BDV
ID = 1 mA
1.05
1.00
0.95
0.90
0.85
-75
DS3646 - Rev 7
-25
25
75
125
Tj (°C)
page 5/21
STD2HNK60Z, STD2HNK60Z-1
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
Figure 10. Normalized on-resistance vs temperature
RDS(on)
(norm.)
2.5
GADG280920211325RON
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
-75
Figure 11. Source-drain diode forward characteristics
-25
25
75
125
Tj (°C)
Figure 12. Maximum avalanche energy vs temperature
ID = 2 A
VDD = 50 V
DS3646 - Rev 7
page 6/21
STD2HNK60Z, STD2HNK60Z-1
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
A
L
100 µH
fast
diode
B
B
B
G
RG
VD
3.3
µF
D
+
Figure 16. Unclamped inductive load test circuit
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
_
D.U.T.
Vi
pulse width
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
VDD
VGS
0
AM01472v1
DS3646 - Rev 7
10%
0
ID
VDS
10%
90%
10%
AM01473v1
page 7/21
STD2HNK60Z, STD2HNK60Z-1
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
DPAK (TO-252) type A package information
Figure 19. DPAK (TO-252) type A package outline
0068772_A_30
DS3646 - Rev 7
page 8/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) type A package information
Table 8. DPAK (TO-252) type A mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS3646 - Rev 7
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 9/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) type C package information
4.2
DPAK (TO-252) type C package information
Figure 20. DPAK (TO-252) type C package outline
0068772_C_29
DS3646 - Rev 7
page 10/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) type C package information
Table 9. DPAK (TO-252) type C mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.25
E
6.50
E1
4.70
e
5.46
6.10
6.20
6.60
6.70
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
2.90 REF
0.90
L3
L4
1.25
0.51 BSC
0.60
L6
DS3646 - Rev 7
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 11/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) type C package information
Figure 21. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_30
DS3646 - Rev 7
page 12/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 22. DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DS3646 - Rev 7
page 13/21
STD2HNK60Z, STD2HNK60Z-1
DPAK (TO-252) packing information
Figure 23. DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS3646 - Rev 7
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 14/21
STD2HNK60Z, STD2HNK60Z-1
IPAK (TO-251) type A package information
4.4
IPAK (TO-251) type A package information
Figure 24. IPAK (TO-251) type A package outline
0068771_IK_typeA_rev15
DS3646 - Rev 7
page 15/21
STD2HNK60Z, STD2HNK60Z-1
IPAK (TO-251) type A package information
Table 11. IPAK (TO-251) type A package mechanical data
Dim.
mm
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
DS3646 - Rev 7
Max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
1.00
page 16/21
STD2HNK60Z, STD2HNK60Z-1
IPAK (TO-251) type C package information
4.5
IPAK (TO-251) type C package information
Figure 25. IPAK (TO-251) type C package outline
0068771_IK_typeC_rev15
DS3646 - Rev 7
page 17/21
STD2HNK60Z, STD2HNK60Z-1
IPAK (TO-251) type C package information
Table 12. IPAK (TO-251) type C package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.35
A1
0.90
1.00
1.10
b
0.66
0.79
b2
DS3646 - Rev 7
0.90
b4
5.23
5.33
5.43
c
0.46
0.59
c2
0.46
0.59
D
6.00
6.10
6.20
D1
5.20
5.37
5.55
E
6.50
6.60
6.70
E1
4.60
4.78
4.95
e
2.20
2.25
2.30
e1
4.40
4.50
4.60
H
16.18
16.48
16.78
L
9.00
9.30
9.60
L1
0.80
1.00
1.20
L2
0.90
1.08
1.25
θ1
3°
5°
7°
θ2
1°
3°
5°
page 18/21
STD2HNK60Z, STD2HNK60Z-1
Revision history
Table 13. Document revision history
Date
Revision
Changes
09-Mar-2004
1
First release.
23-Mar-2004
2
Modified title
02-Apr-2005
3
Added new section: Electrical characteristics (curves)
06-Mar-2006
4
Inserted DPAK. The document has been reformatted
25-May-2012
5
Corrected unit in Table 5: On/off states
Removed maturity status indication from cover page. The document status is
production data.
04-Jun-2018
6
Updated title and features in cover page, Section 1 Electrical ratings, Section
2 Electrical characteristics and Section 4 Package information.
Minor text changes.
The part numbers STF2HNK60Z and STQ2HNK60ZR-AP have been moved
to a separate datasheet and the document has been updated accordingly.
Modified Table 7. Source-drain diode.
06-Oct-2021
7
Modified Figure 1. Safe operating area , Figure 2. Thermal impedance,
Figure 5. Normalized V(BR)DSS vs temperature and Figure 10. Normalized
on-resistance vs temperature.
Updated Section 4 Package information.
DS3646 - Rev 7
page 19/21
STD2HNK60Z, STD2HNK60Z-1
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5
IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
DS3646 - Rev 7
page 20/21
STD2HNK60Z, STD2HNK60Z-1
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
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names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
DS3646 - Rev 7
page 21/21