STD2NC45-1_09

STD2NC45-1 N-channel 450 V, 4.1 Ω 1.5 A, IPAK , SuperMESH™ Power MOSFET Features ■ ■ ■ ■ Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark 2 1 3 Application ■ Switching applications IPAK Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Figure 1. Internal schematic diagram Table 1. Device summary Order code STD2NC45-1 Marking D2NC45 Package IPAK Packaging Tube April 2009 Doc ID 9103 Rev 4 1/13 www.st.com 13 Contents STD2NC45-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits ............................................... 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 9103 Rev 4 STD2NC45-1 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 450 ±30 1.5 0.95 6 30 0.24 3 –65 to 150 Max. operating junction temperature °C Unit V V A A A W W/°C V/ns °C PTOT dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature 1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 4.1 100 275 Unit °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ Doc ID 9103 Rev 4 3/13 Electrical characteristics STD2NC45-1 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125°C VGS = ± 30V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 ±100 3.7 4.5 Typ. Max. Unit V µA µA nA V Ω Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 - VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7Ω (see Figure 17) - 10 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Table 7. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 225V, ID = 0.5A RG = 4.7Ω VGS = 10V (see Figure 16) VDD = 360V, ID = 1.5A, RG = 4.7Ω, VGS = 10V (see Figure 16) Min. Typ. 6.7 4 8.5 12 18 Max. Unit ns ns ns ns ns - - - - 4/13 Doc ID 9103 Rev 4 STD2NC45-1 Electrical characteristics Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, VGS = 0 ISD = 1.5A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see Figure 21) Test conditions Min. 225 530 4.7 Typ. Max. Unit 1.5 6.0 1.6 A A V ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Doc ID 9103 Rev 4 5/13 Electrical characteristics STD2NC45-1 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for IPAK Figure 3. Thermal impedance for IPAK Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 9103 Rev 4 STD2NC45-1 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 9103 Rev 4 7/13 Electrical characteristics Figure 14. Max Id current vs Temperature STD2NC45-1 Figure 15. Maximum avalanche energy vs temperature 8/13 Doc ID 9103 Rev 4 STD2NC45-1 Test circuits 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform Doc ID 9103 Rev 4 9/13 Package mechanical data STD2NC45-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 9103 Rev 4 STD2NC45-1 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H Doc ID 9103 Rev 4 11/13 Revision history STD2NC45-1 5 Revision history Table 9. Date 21-Jun-2004 12-Jul-2006 17-Apr-2009 Revision history Revision 2 3 4 Complete version New template Updated mechanical data New ECOPACK® statement in Section 4: Package mechanical data Changes 12/13 Doc ID 9103 Rev 4 STD2NC45-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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