STD2NK70Z

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET General features Type STD2NK70Z STD2NK70Z-1 ■ ■ ■ ■ ■ VDSS 700V 700V RDS(on) 7Ω 7Ω ID 1.6A 1.6A Pw 45W 45W 1 3 2 1 3 Extremely high dv/dt capability ESD improved capability 100% avalanche tested New high voltage benchmark Gate charge minimized DPAK IPAK Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STD2NK70Z STD2NK70Z-1 Marking D2NK70Z D2NK70Z Package D²PAK IPAK Packaging Tape & reel Tube July 2006 Rev 3 1/16 www.st.com 16 Contents STD2NK70Z - STD2NK70Z-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD2NK70Z - STD2NK70Z-1 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak diode recovery voltage slope Storage temperature 55 to 150 Max. operating junction temperature °C Value 700 700 ± 30 1.6 1 6.4 45 0.36 2000 4.5 Unit V V V A A A W W/°C V V/ns Ptot VESD(G-S) dv/dt (2) Tstg Tj 1. Pulse width limited by safe operating area. 2. ISD ≤ 1.6A, di/dt ≤ 200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 2.78 100 300 °C/W °C/W °C Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 1.6 110 Unit A mJ 3/16 Electrical ratings STD2NK70Z - STD2NK70Z-1 Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-source breakdown voltage Test Condition Igs= ± 1mA (open drain) Min. 30 Typ. Max Unit A 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STD2NK70Z - STD2NK70Z-1 Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 50µA VGS= 10V, ID= 0.8A 3 3.75 6 Min. 700 1 50 ±10 4.5 7 Typ. Max. Unit V µA µA nA V Ω Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 0.8A VDS =25V, f=1 MHz, VGS=0 Min. Typ. 1.4 280 35 6.5 17 7 17 20 35 11.4 2 6.8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Coss eq(2). Equivalent output capacitance td(on) tr td(off) tf Qg Qgs Qgd Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 560V VDD=350 V, ID= 0.8A, RG=4.7Ω, VGS=10V (see Figure 14) VDD=560V, ID = 0.8A VGS =10V (see Figure 15) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 5/16 Electrical characteristics STD2NK70Z - STD2NK70Z-1 Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1.6A, VGS=0 ISD=1.6A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 16) ISD=1.6A, di/dt = 100A/µs, VDD= 50V, Tj=150°C (see Figure 16) 334 918 5.5 Test conditions Min Typ. Max 1.6 6.4 1.6 Unit A A V ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current 350 1050 6 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/16 STD2NK70Z - STD2NK70Z-1 Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 7/16 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. STD2NK70Z - STD2NK70Z-1 Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 8/16 STD2NK70Z - STD2NK70Z-1 Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/16 Test circuit STD2NK70Z - STD2NK70Z-1 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 10/16 STD2NK70Z - STD2NK70Z-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STD2NK70Z - STD2NK70Z-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 12/16 STD2NK70Z - STD2NK70Z-1 Package mechanical data DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 13/16 Packaging mechanical data STD2NK70Z - STD2NK70Z-1 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 STD2NK70Z - STD2NK70Z-1 Revision history 6 Revision history Table 8. Date 21-Jan-2005 10-Jun-2005 13-Jul-2006 Revision history Revision 1 2 3 First Release Updated Figure 1: Safe operating area New template, no content change Changes 15/16 STD2NK70Z - STD2NK70Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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