STD2NK70ZT4

STD2NK70Z - STD2NK70Z-1 N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH™ MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID Pw STD2NK70Z STD2NK70Z-1 700 V 700 V 7Ω 7Ω 1.6 A 1.6 A 45 W 45 W ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 6 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products. 3 3 1 DPAK 2 1 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ■ FLYBACK CONFIGURATION FOR BATTERY CHARGER ■ Table 2: Order Codes Sales Type Marking Package Packaging STD2NK70ZT4 D2NK70Z DPAK TAPE & REEL STD2NK70Z-1 D2NK70Z IPAK TUBE Rev. 2 January 2005 1/12 STD2NK70Z - STD2NK70Z-1 Table 3: Absolute Maximum ratings Symbol Value Unit Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (R GS = 20 KΩ) 700 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at T C = 25°C 1.6 A ID Drain Current (continuous) at T C = 100°C VDS VDGR VGS IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain Current (pulsed) Total Dissipation at T C = 25°C 1 A 6.4 A 45 W Derating Factor 0.36 W/°C Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 2000 V 4.5 V/ns -55 to 150 °C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (*) Pulse width limited by safe operating area (1) ISD ≤ 1.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 2.78 °C/W Rthj-amb Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 100 300 °C/W °C Table 5: Avalanche Characteristics Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 1.6 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 110 mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Min. Igs= ± 1mA (Open Drain) 30 Typ. Max Unit A PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STD2NK70Z - STD2NK70Z-1 TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (V DS = 0) VGS = ± 20 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 0.8 A Min. Typ. Max. 700 3 Unit V 1 50 µA µA ± 10 µA 3.75 4.5 V 6 7 Ω Typ. Max. Unit Table 8: Dynamic Symbol Parameter Test Conditions Min. Forward Transconductance VDS = 15 V, ID = 0.8 A 1.4 Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 560 V 17 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 280 35 6.5 pF pF pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 350 V, ID = 0.8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) 7 17 20 35 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 560 V, ID = 0.8 A, VGS = 10 V (see Figure 20) 11.4 2 6.8 15 nC nC nC Typ. Max. Unit 1.6 6.4 A A gfs (1) Coss eq.(3) S Table 9: Source Drain Diode Symbol Parameter Test Conditions Min. ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage I SD = 1.6 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1.6, di/dt = 100 A/µs VDD =50 V, T j = 25°C (see Figure 18) 334 918 5.5 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1.6, di/dt = 100 A/µs VDD = 50 V, T j = 150°C (see Figure 18) 350 1050 6 ns µC A trr Qrr IRRM trr Qrr IRRM 1.6 V (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (2) Pulse width limited by safe operating area (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/12 STD2NK70Z - STD2NK70Z-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STD2NK70Z - STD2NK70Z-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/12 STD2NK70Z - STD2NK70Z-1 Figure 15: Maximum Avalanche Energy vs Temperature 6/12 STD2NK70Z - STD2NK70Z-1 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/12 STD2NK70Z - STD2NK70Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/12 STD2NK70Z - STD2NK70Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B5 3 B B3 B6 L D However, STMicroelectronics Information furnished is believed to be assumes no responsibility for the consequences L2accurate and reliable. of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. = = 2 = E = G = All other names are the property of their respective owners B2 = The ST logo is a registered trademark of STMicroelectronics 1 © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies L1- Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Australia - Belgium - Brazil - Canada - China - Czech Republic Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of0068771-E America www.st.com 9/12 STD2NK70Z - STD2NK70Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.059 0.153 0.161 0.065 0.073 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 * on sales type 10/12 inch 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD2NK70Z - STD2NK70Z-1 Table 10: Revision History Date Revision 07-Sep-2004 24-Jan-2005 1 2 Description of Changes First Release, complete document. New curve, figure 3, and new Rds(on) value Max. 11/12 STD2NK70Z - STD2NK70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12