STD2NK90Z

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-CHANNEL 900V - 5Ω - 2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STD2NK90Z STD2NK90Z-1 STP2NK90Z s s s s s s s Figure 1: Package ID 2.1 A 2.1 A 2.1 A Pw 70 W 70 W 70 W 3 1 VDSS 900 V 900 V 900 V RDS(on) < 6.5 Ω < 6.5 Ω < 6.5 Ω TYPICAL RDS(on) = 5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 DPAK 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. IPAK Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE STD2NK90ZT4 STD2NK90Z-1 STP2NK90Z MARKING D2NK90Z D2NK90Z P2NK90Z PACKAGE DPAK IPAK TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev. 2 October 2004 1/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Table 3: Absolute Maximum ratings Symbol Parameter STP2NK90Z Value STD2NK90Z STD2NK90Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 900 900 ± 30 2.1 1.3 8.4 70 0.56 2000 4.5 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.78 62.5 300 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 2.1 150 Unit A mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125°C VGS = ± 20 V VDS = VGS, ID = 50 µA VGS = 10 V, ID = 1.05 A 3 3.75 5 Min. 900 1 50 ± 10 4.5 6.5 Typ. Max. Unit V µA µA µA V Ω Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss COSS eq (3). td(on) tr td(off) tf Qg Qgs Qgd Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 2.3 485 50 10 24 21 11 43 40 19.5 3.4 10.8 27 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward Transconductance VDS = 15 V , ID = 1.05 A VGS = 0 V, VDS = 0 to 720 V VDD = 450 V, ID = 1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) VDD = 720 V, ID = 2 A, VGS = 10 V (see Figure 22) Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.1 A, VGS = 0 ISD = 2 A, di/dt = 100 A/µs VDD = 50V (see Figure 20) ISD = 2 A, di/dt = 100 A/µs VDD = 50V, Tj = 150°C (see Figure 20) 415 1.5 7.2 515 1.9 7.5 Test Conditions Min. Typ. Max. 2.1 8.4 1.6 Unit A A V ns µC A ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance TO-220 Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 15: Source-Drain Forward Characteristics Figure 17: Normalized BVDSS vs Temperature Figure 16: Maximum Avalanche Energy vs Temperature 6/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 8/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 9/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 10/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 11/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Table 10: Revision History Date 27-Sep-2004 30-Sep-2004 Revision 1 2 First release Complete version Description of Changes 12/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13