STD35P6LLF6

STD35P6LLF6 P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDSS RDS(on) max. ID PTOT STD35P6LLF6 60 V 0.028 Ω 35 A 70 W     Figure 1: Internal schematic diagram Applications  D(2, TAB) Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packaging STD35P6LLF6 35P6LLF6 DPAK Tape and Reel April 2017 DocID025600 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents STD35P6LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/16 4.1 DPAK package information ............................................................. 10 4.2 Packing information ......................................................................... 13 Revision history ............................................................................ 15 DocID025600 Rev 3 STD35P6LLF6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 25 A IDM(1) Drain current (pulsed) 140 A PTOT Total dissipation at TC = 25 °C 70 W Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max Value Unit 2.14 °C/W For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DocID025600 Rev 3 3/16 Electrical characteristics 2 STD35P6LLF6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS VGS = 0 V, ID = 250 µA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 µA VGS = 0 V, VDS = 60 V, TC = 125 °C(1) 10 µA Gate-body leakage current VDS = 0 V, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 17.5 A 0.025 0.028 VGS = 4.5 V, ID= 17.5 A 0.03 0.036 1 Ω Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG Gate input resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 35 A, VGS = 0 to 4.5 V (see Figure 14: "Gate charge test circuit") ID = 0 A, gate DC bias = 0 V, f = 1 MHz, magnitude of alternative signal = 20 mV Min. Typ. Max. Unit - 3780 - pF - 262 - pF - 170 - pF - 30 - nC - 10.8 - nC - 10.5 - nC - 1.7 - Ω Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 17.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load") Min. Typ. Max. Unit - 51.4 - ns - 39 - ns - 171 - ns - 21 - ns For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 4/16 DocID025600 Rev 3 STD35P6LLF6 Electrical characteristics Table 7: Source drain diode Symbol VSD (1) Parameter Test conditions Min. Forward on voltage VGS = 0 V, ISD = 35 A - trr Reverse recovery time - Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 35 A, di/dt = 100 A/µs, VDD = 48 V, (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Typ. Max. 1.5 34 Unit V ns - 48 nC - 2.8 A Notes: (1)Pulse test: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DocID025600 Rev 3 5/16 Electrical characteristics 2.1 STD35P6LLF6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs temperature Figure 7: Normalized V(BR)DSS vs temperature 6/16 DocID025600 Rev 3 STD35P6LLF6 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations voltage Figure 12: Source-drain diode forward characteristics DocID025600 Rev 3 7/16 Test circuits 3 STD35P6LLF6 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/16 DocID025600 Rev 3 STD35P6LLF6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID025600 Rev 3 9/16 Package information 4.1 STD35P6LLF6 DPAK package information Figure 16: DPAK (TO-252) type A2 package outline 0068772_type-A2_rev21 10/16 DocID025600 Rev 3 STD35P6LLF6 Package information Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID025600 Rev 3 8° 11/16 Package information STD35P6LLF6 Figure 17: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm) 12/16 DocID025600 Rev 3 STD35P6LLF6 4.2 Package information Packing information Figure 18: DPAK (TO-252) tape outline DocID025600 Rev 3 13/16 Package information STD35P6LLF6 Figure 19: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 14/16 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID025600 Rev 3 18.4 22.4 STD35P6LLF6 5 Revision history Revision history Table 10: Document revision history Date Revision Changes 11-Dec-2013 1 First release. 24-Feb-2015 2 In title description on cover page, changed 0.02 Ω to 0.023 Ω In features table on cover page, changed 0.028 Ω to 0.026 Ω Updated Table 2: Absolute maximum ratings Updated Table 4: Static – renamed table and updated Static drainsource on-resistance values Updated Table 5: Dynamic – test conditions and all typical values Updated Table 6: Switching times – test conditions and all typical values Updated Table 7: Source-drain diode – test conditions and all typical values Added Section 2.2: Electrical characteristics (curves) Updated Section 4: Package mechanical data Minor text changes 03-Apr-2017 3 Updated VSD maximum value in Table 7: "Source drain diode". Updated Section 4.1: "DPAK package information" Minor text changes. DocID025600 Rev 3 15/16 STD35P6LLF6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID025600 Rev 3