STD3N40K3
N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™
Zener-protected Power MOSFET in a DPAK package
Datasheet — production data
Features
Order code
VDSS
RDS(on) max
ID
Pw
STD3N40K3
400 V
< 3.4 Ω
2A
30 W
TAB
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
■
Zener-protected
3
1
DPAK
Figure 1.
Applications
■
Internal schematic diagram
'7$%
Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
*
6
AM01476v1
Table 1.
Device summary
Order code
Marking
Package
Packaging
STD3N40K3
3N40K3
DPAK
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023398 Rev 1
1/16
www.st.com
16
Contents
STD3N40K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
Doc ID 023398 Rev 1
STD3N40K3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage
400
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2
A
ID
Drain current (continuous) at TC = 100 °C
1.2
A
Drain current (pulsed)
8.0
A
Total dissipation at TC = 25 °C
30
W
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
1
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
45
mJ
IDM
(1)
PTOT
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
2500
V
dv/dt (2)
Peak diode recovery voltage slope
12
V/ns
Tstg
Tj
Storage temperature
°C
- 55 to 150
Max. operating junction temperature
°C
1. Pulse width limited by safe operating area.
2. ISD < 2 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
4.17
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W
Doc ID 023398 Rev 1
3/16
Electrical characteristics
2
STD3N40K3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
400
V
IDSS
Zero gate voltage
VDS = 400 V
drain current (VGS = 0) VDS = 400 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±10
µA
3.75
4.5
V
2.7
3.4
Ω
Typ.
Max.
Unit
-
pF
pF
pF
VGS = ± 20 V, VDS=0
VGS(th)
Gate threshold voltage VGS = VDS, ID = 50 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 0.9 A
resistance
Table 5.
Symbol
Ciss
Coss
Crss
Coss(tr)(2)
3
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
Equivalent output
Coss(er)(1) capacitance energy
related
Min.
-
165
17
3
-
9
-
pF
-
14
-
pF
-
10
-
Ω
-
11
2
7
-
nC
nC
nC
VDS=0 to 320 V, VGS=0
Equivalent output
capacitance time
related
Rg
Instrinsic gate
resistance
f=1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 320 V, ID = 1.8 A,
VGS = 10 V
(see Figure 16)
1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS
4/16
Unit
Doc ID 023398 Rev 1
STD3N40K3
Electrical characteristics
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Symbol
Switching times
Parameter
Turn on delay time
Rise time
Turn off delay time
Fall time
Parameter
ISDM (1)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
VDD = 200 V, ID = 0.6,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min.
Typ.
Max.
Unit
-
7
8
18
14
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
-
1.8
7.2
A
A
-
1.5
V
Source drain diode
Source-drain current
Source-drain current
(pulsed)
ISD
Test conditions
Test conditions
ISD = 1.8 A, VGS = 0
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V
Reverse recovery current (see Figure 17)
-
145
490
7
ns
nC
A
Reverse recovery time
ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
Reverse recovery current (see Figure 17)
-
166
580
7
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min.
30
Typ.
Max. Unit
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 023398 Rev 1
5/16
Electrical characteristics
STD3N40K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM12470v1
ID
(A)
1
is
10µs
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
100µs
0.1
1ms
10ms
0.01
Tj=150°C
Tc=25°C
Single pulse
0.001
Figure 4.
10
1
0.1
100
VDS(V)
Output characteristics
AM09050v1
ID (A)
VGS=10V
3.5
AM12473v1
ID
(A)
VDS=15V
3
7V
3.0
2.5
2.5
2
2.0
1.5
6V
1.5
1
1.0
0.5
0.5
5V
0
0
Figure 6.
5
10
15
20
25
VDS(V)
0
0
Gate charge vs gate-source voltage Figure 7.
AM08996v1
VGS
(V)
VGS
VDD=320V
ID=1.8A
12
VDS
350
300
10
250
8
RDS(on)
(Ω)
2
4
6
8
VGS(V)
Static drain-source on-resistance
AM08997v1
VGS=10V
3.8
3.6
3.4
200
6
3.2
150
4
100
2
50
0
0
6/16
2
4
6
8
0
10 Qg(nC)
3.0
2.8
2.6
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID(A)
Doc ID 023398 Rev 1
STD3N40K3
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM08998v1
C
(pF)
Output capacitance stored energy
AM12477v1
Eoss
(µJ)
0.8
Ciss
100
0.7
0.6
0.5
0.4
10
Coss
0.3
0.2
Crss
1
0.1
1
100
10
AM12478v1
VGS(th)
100
200
300
400
VDS(V)
Figure 11. Normalized on-resistance vs.
temperature
AM12479v1
RDS(on)
(norm)
ID=50µA
1.10
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage
vs. temperature
(norm)
0.1
VGS=10V
ID=0.9A
2.5
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
-25
25
75
Figure 12. Source-drain diode forward
characteristics
-25
25
75
125
TJ(°C)
Figure 13. Normalized BVDSS vs. temperature
AM12480v1
VSD
(V)
0
-75
TJ(°C)
125
AM12481v1
BVDSS
(norm)
TJ=-50°C
ID=1mA
1.0
1.10
0.9
1.05
0.8
TJ=25°C
0.7
1.00
TJ=150°C
0.6
0.95
0.5
0.4
0
0.4
0.8
1.2
1.6
ISD(A)
0.90
-75
Doc ID 023398 Rev 1
-25
25
75
125
TJ(°C)
7/16
Electrical characteristics
STD3N40K3
Figure 14. Maximum avalanche energy vs.
starting Tj
AM12482v1
EAS (mJ)
50
ID= 1 A
VDD= 50 V
45
40
35
30
25
20
15
10
5
0
0
8/16
20
40
60
80 100 120 140 TJ(°C)
Doc ID 023398 Rev 1
STD3N40K3
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 023398 Rev 1
10%
AM01473v1
9/16
Package mechanical data
4
STD3N40K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/16
Doc ID 023398 Rev 1
STD3N40K3
Package mechanical data
Table 9.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
R
V2
1
0.20
0°
8°
Doc ID 023398 Rev 1
11/16
Package mechanical data
STD3N40K3
Figure 21. DPAK (TO-252) drawing
0068772_I
Figure 22. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
a. All dimension are in millimeters
12/16
Doc ID 023398 Rev 1
AM08850v1
STD3N40K3
5
Packaging mechanical data
Packaging mechanical data
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 023398 Rev 1
18.4
22.4
13/16
Packaging mechanical data
STD3N40K3
Figure 23. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 24. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
14/16
Doc ID 023398 Rev 1
STD3N40K3
6
Revision history
Revision history
Table 11.
Document revision history
Date
Revision
24-Jul-2012
1
Changes
First release.
Doc ID 023398 Rev 1
15/16
STD3N40K3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16
Doc ID 023398 Rev 1