STD3NK100Z, STF3NK100Z
Datasheet
N-channel 1000 V, 5.4 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in
DPAK and TO-220FP packages
Features
Order code
STD3NK100Z
STF3NK100Z
•
•
•
•
•
D(2, TAB)
G(1)
VDS
RDS(on) max.
ID
1000 V
6Ω
2.5 A
Package
DPAK
TO-220FP
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Applications
•
S(3)
AM01475V1
Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
Product status link
STD3NK100Z
STF3NK100Z
DS5252 - Rev 3 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STD3NK100Z, STF3NK100Z
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
DPAK
TO-220FP
Unit
VDS
Drain-source voltage
1000
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM
(2)
2.5 (1)
2.5
1.57
1.57
(1)
A
A
Drain current (pulsed)
10
10
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
ESD
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
dv/dt
(3)
VISO
Tj
Tstg
Peak diode recovery voltage slope
3
kV
4.5
V/ns
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s; TC = 25°C)
2.5
Operating junction temperature range
-55 to 150
Storage temperature range
kV
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Value
DPAK
TO-220FP
5
Rthj-case
Thermal resistance junction-case
1.39
Rthj-pcb (1)
Thermal resistance junction-pcb
50
Rthj-amb
Unit
°C/W
Thermal resistance junction-ambient
62.5
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR (1)
Avalanche current, repetitive or not-repetitive
2.5
A
EAS (2)
Single pulse avalanche energy
110
mJ
1. Pulse width limited by Tjmax.
2. Starting Tj = 25°C, ID = IAR, VDD = 50 V.
DS5252 - Rev 3
page 2/22
STD3NK100Z, STF3NK100Z
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
1000
Unit
V
VGS = 0 V, VDS = 1000 V
1
µA
VGS = 0 V, VDS = 1000 V,
TC = 125 °C (1)
50
µA
±10
µA
3.75
4.5
V
5.4
6
Ω
Typ.
Max.
Unit
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±30 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.25 A
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Ciss
Coss
Parameter
Test conditions
Min.
Input capacitance
Output capacitance
601
VDS = 25 V, f = 1 MHz,
VGS = 0 V
-
53
Crss
Reverse transfer
capacitance
Coss eq. (1)
Equivalent output
capacitance
VGS = 0 V, VDS = 0 V to 800 V
-
15
-
pF
RG
Gate input resistance
f = 1 MHz, open drain
-
8.6
-
Ω
Qg
Total gate charge
VDD = 800 V, ID = 2.5 A,
Qgs
Gate-source charge
VGS = 0 to 10 V
-
nC
Gate-drain charge
(see Figure 16. Test circuit for gate charge
behavior)
Qgd
12
18
-
3.6
9.2
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to
80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tr
DS5252 - Rev 3
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Max.
Unit
-
ns
15
VDD = 500 V, ID = 1.25 A, RG = 4.7 Ω,
VGS = 10 V
(see Figure 15. Test circuit for resistive load
switching times and Figure 20. Switching
time waveform)
Typ.
-
7.5
39
32
page 3/22
STD3NK100Z, STF3NK100Z
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
2.5
ISDM (1)
Source-drain current
(pulsed)
-
10
VSD (2)
Forward on voltage
ISD = 2.5 A, VGS = 0 V
-
1.6
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs
-
584
ns
Qrr
Reverse recovery charge
-
2.3
μC
IRRM
Reverse recovery current
VDD = 100 V (see Figure 17. Test circuit for
inductive load switching and diode recovery
times)
-
8
A
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs
-
628
ns
Qrr
Reverse recovery charge
-
2.5
μC
IRRM
Reverse recovery current
VDD = 100 V, Tj = 150 °C (see Figure
17. Test circuit for inductive load switching
and diode recovery times)
-
8.1
A
A
V
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Gate-source breakdown
voltage
Test conditions
IGS = ±1 mA, ID = 0 A
Min.
Typ.
Max.
Unit
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS5252 - Rev 3
page 4/22
STD3NK100Z, STF3NK100Z
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for DPAK
Figure 3. Safe operating area for TO-220FP
Figure 2. Thermal impedance for DPAK
Figure 4. Thermal impedance for TO-220FP
K
GC20940_ZTH
δ=0.5
0.1
δ=0.2
0.05
0.02
10 -1
0.01
Single pulse
10 -2
10
Figure 5. Output characterisics
DS5252 - Rev 3
-3
10-4
10-3
10
-2
10
-1
10
0
tp(s)
Figure 6. Transfer characteristics
page 5/22
STD3NK100Z, STF3NK100Z
Electrical characteristics (curves)
Figure 7. Normalized V(BR)DSS vs temperature
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage
Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs
temperature
Figure 12. Normalized on resistance vs temperature
DS5252 - Rev 3
page 6/22
STD3NK100Z, STF3NK100Z
Electrical characteristics (curves)
Figure 13. Source-drain diode forward characteristics
DS5252 - Rev 3
Figure 14. Maximum avalanche energy vs temperature
page 7/22
STD3NK100Z, STF3NK100Z
Test circuits
3
Test circuits
Figure 15. Test circuit for resistive load switching times
Figure 16. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 17. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 18. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 20. Switching time waveform
Figure 19. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS5252 - Rev 3
page 8/22
STD3NK100Z, STF3NK100Z
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS5252 - Rev 3
page 9/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) type A2 package information
4.1
DPAK (TO-252) type A2 package information
Figure 21. DPAK (TO-252) type A2 package outline
0068772_type-A2_rev25
DS5252 - Rev 3
page 10/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.10
5.20
5.30
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS5252 - Rev 3
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 11/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) type C2 package information
4.2
DPAK (TO-252) type C2 package information
Figure 22. DPAK (TO-252) type C2 package outline
0068772_C2_25
DS5252 - Rev 3
page 12/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) type C2 package information
Table 10. DPAK (TO-252) type C2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.10
E
6.50
E1
5.20
e
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
6.20
5.60
6.60
6.70
5.50
0.90
1.25
0.51 BSC
0.60
L6
DS5252 - Rev 3
6.10
5.46
2.90 REF
L3
L4
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 13/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) type C2 package information
Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS5252 - Rev 3
page 14/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 24. DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DS5252 - Rev 3
page 15/22
STD3NK100Z, STF3NK100Z
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 11. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS5252 - Rev 3
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 16/22
STD3NK100Z, STF3NK100Z
TO-220FP package information
4.4
TO-220FP package information
Figure 26. TO-220FP package outline
7012510_Rev_12_B
DS5252 - Rev 3
page 17/22
STD3NK100Z, STF3NK100Z
TO-220FP package information
Table 12. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS5252 - Rev 3
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 18/22
STD3NK100Z, STF3NK100Z
Ordering information
5
Ordering information
Table 13. Order codes
DS5252 - Rev 3
Order code
Marking
Package
Packing
STD3NK100Z
D3NK100Z
DPAK
Tape and reel
STF3NK100Z
F3NK100Z
TO-220FP
Tube
page 19/22
STD3NK100Z, STF3NK100Z
Revision history
Table 14. Document revision history
Date
Version
Changes
17-May-2007
1
First release
18-Oct-2007
2
Added DPAK
The part number STP3NK100Z has been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is production data.
02-Jul-2018
3
Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics
and Section 4 Package information.
Minor text changes.
DS5252 - Rev 3
page 20/22
STD3NK100Z, STF3NK100Z
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5
4.1
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
DS5252 - Rev 3
page 21/22
STD3NK100Z, STF3NK100Z
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© 2018 STMicroelectronics – All rights reserved
DS5252 - Rev 3
page 22/22