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STD3NK60ZD

STD3NK60ZD

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    MOSFET N-CH 600V 2.4A DPAK

  • 数据手册
  • 价格&库存
STD3NK60ZD 数据手册
STD3NK60ZD N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET Features Type VDSS RDS(on) max ID STD3NK60ZD 600 V < 3.6Ω 2.4 A ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Fast internal recovery diode 3 u d o 1 r P e DPAK t e l o Application ■ ) s ( ct Switching applications ) (s Description s b O Figure 1. Internal schematic diagram t c u The SuperFREDMesh™ series associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging STD3NK60ZD 3NK60ZD DPAK Tape and reel September 2008 Rev 2 1/14 www.st.com 14 Contents STD3NK60ZD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/14 s b O STD3NK60ZD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 2.4 A ID Drain current (continuous) at TC = 100 °C 1.51 A Drain current (pulsed) 9.6 Total dissipation at TC = 2 5°C 45 (1) PTOT (s) A du ct W Derating factor 0.36 Peak diode recovery voltage slope ro V/ns -55 to 150 °C Value Unit Rthj-amb Thermal resistance junction-ambient max 100 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W 300 °C Max value Unit dv/dt (2) Tj Tstg Operating junction temperature Storage temperature 15 2. ISD ≤ 2.4 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol )- Parameter s b O s ( t c Tl u d o Maximum lead temperature for soldering purpose r P e Table 4. t e l o Symbol P e W/°C t e l o 1. Pulse width limited by safe operating area O Unit VDS IDM bs Value Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ 3/14 Electrical characteristics 2 STD3NK60ZD Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. Symbol On /off states Parameter Drain-source breakdown voltage V(BR)DSS Test conditions ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Test conditions Input capacitance Output capacitance Reverse transfer capacitance s b O Unit 600 V µA µA ± 10 µA ) s ( ct du 4.5 V 3.3 3.6 Ω Typ. Max. Unit 3 o r P Min. 1 50 3.75 VDS = 25 V, f = 1 MHz, VGS = 0 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 27 pF Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 2.4 A, VGS = 10 V (see Figure 16) 11.8 2.6 6.4 nC nC nC t c u d o r P e Max. 311 43 8 ) (s Coss eq(1) t e l o e t e ol Parameter Ciss Coss Crss Qg Qgs Qgd VGS = 10 V, ID = 1.2 A Dynamic Symbol Typ. VGS = ± 20 V VGS(th) Table 6. Min. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS s b O 4/14 STD3NK60ZD Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time ISD Source-drain current Source-drain current (pulsed) VSD (2) trr Qrr IRRM trr Qrr IRRM Max Unit 9 14 19 14 ns ns ns ns Source drain diode Parameter ISDM Typ. VDD = 480 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Symbol (1) Min. Test conditions ISD = 10 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.4 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.4 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) Max. Unit 2.4 9.6 A A 1.6 V t c u od r P e let o s b Typ. (s) Forward on voltage 1. Pulse width limited by safe operating area Min. 98 170 3.4 ns nC A 105 184 3.5 ns nC A O ) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% s ( t c u d o r P e t e l o s b O 5/14 Electrical characteristics STD3NK60ZD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ) s ( ct Figure 4. Output characteristics Figure 5. u d o r P e Transfer characteristics t e l o ) (s s b O t c u d o r P e t e l o bs Figure 6. O 6/14 Transconductance Figure 7. Static drain-source on resistance STD3NK60ZD Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations ) s ( ct Figure 10. Normalized gate threshold voltage vs temperature u d o r P e Figure 11. Normalized on resistance vs temperature t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature s b O 7/14 Electrical characteristics STD3NK60ZD Figure 14. Maximum avalanche energy vs temperature ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/14 s b O STD3NK60ZD 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit ) s ( ct u d o r P e Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 19. Unclamped inductive waveform s b O Figure 20. Switching time waveform 9/14 Package mechanical data 4 STD3NK60ZD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/14 s b O STD3NK60ZD Package mechanical data TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 ) s ( ct c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 u d o 5.10 E 6.40 E1 4.70 e 2.28 e1 4.40 H 9.35 L 1 t e l o bs L1 L2 L4 O ) 0.60 R 0o V2 r P e s ( t c 6.60 4.60 10.10 2.80 0.80 1 0.20 8o u d o r P e t e l o s b O 0068772_G 11/14 Package mechanical data 5 STD3NK60ZD Package mechanical data DPAK FOOTPRINT ) s ( ct All dimensions are in millimeters u d o r P e TAPE AND REEL SHIPMENT t e l o REEL MECHANICAL DATA DIM. )- s ( t c u d o TAPE MECHANICAL DATA DIM. 12/14 inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 e t e ol s b O Pr mm B1 D 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 s b O mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD3NK60ZD 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-Jul-2008 1 First release 11-Sep-2008 2 Document status changed from preliminay data to datasheet ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 13/14 STD3NK60ZD ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. d o r P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14
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