STD3NK60ZD
N-channel 600 V, 3.3 Ω, 2.4 A, DPAK
SuperFREDMesh™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STD3NK60ZD
600 V
< 3.6Ω
2.4 A
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Fast internal recovery diode
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DPAK
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Application
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Switching applications
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Description
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Figure 1.
Internal schematic diagram
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The SuperFREDMesh™ series associates all
advantages of reduced on-resistance, Zener gate
protection and very high dv/dt capability with a
fast body-drain recovery diode. Such series
complements the “FDmesh™” advanced
technology.
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STD3NK60ZD
3NK60ZD
DPAK
Tape and reel
September 2008
Rev 2
1/14
www.st.com
14
Contents
STD3NK60ZD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STD3NK60ZD
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2.4
A
ID
Drain current (continuous) at TC = 100 °C
1.51
A
Drain current (pulsed)
9.6
Total dissipation at TC = 2 5°C
45
(1)
PTOT
(s)
A
du
ct
W
Derating factor
0.36
Peak diode recovery voltage slope
ro
V/ns
-55 to 150
°C
Value
Unit
Rthj-amb Thermal resistance junction-ambient max
100
°C/W
Rthj-pcb Thermal resistance junction-pcb max
50
°C/W
300
°C
Max value
Unit
dv/dt (2)
Tj
Tstg
Operating junction temperature
Storage temperature
15
2. ISD ≤ 2.4 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Symbol
)-
Parameter
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Maximum lead temperature for soldering
purpose
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Table 4.
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Symbol
P
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W/°C
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1. Pulse width limited by safe operating area
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Unit
VDS
IDM
bs
Value
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.4
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150
mJ
3/14
Electrical characteristics
2
STD3NK60ZD
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Drain-source
breakdown voltage
V(BR)DSS
Test conditions
ID = 1 mA, VGS = 0
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on
Static drain-source on
resistance
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
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Unit
600
V
µA
µA
± 10
µA
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du
4.5
V
3.3
3.6
Ω
Typ.
Max.
Unit
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Min.
1
50
3.75
VDS = 25 V, f = 1 MHz, VGS = 0
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
27
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 2.4 A,
VGS = 10 V
(see Figure 16)
11.8
2.6
6.4
nC
nC
nC
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Max.
311
43
8
)
(s
Coss eq(1)
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Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 10 V, ID = 1.2 A
Dynamic
Symbol
Typ.
VGS = ± 20 V
VGS(th)
Table 6.
Min.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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STD3NK60ZD
Electrical characteristics
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
ISD
Source-drain current
Source-drain current (pulsed)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Max Unit
9
14
19
14
ns
ns
ns
ns
Source drain diode
Parameter
ISDM
Typ.
VDD = 480 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Symbol
(1)
Min.
Test conditions
ISD = 10 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.4 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
Max. Unit
2.4
9.6
A
A
1.6
V
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Typ.
(s)
Forward on voltage
1. Pulse width limited by safe operating area
Min.
98
170
3.4
ns
nC
A
105
184
3.5
ns
nC
A
O
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2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STD3NK60ZD
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
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Figure 4.
Output characteristics
Figure 5.
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Transfer characteristics
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Figure 6.
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Transconductance
Figure 7.
Static drain-source on resistance
STD3NK60ZD
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
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Figure 10. Normalized gate threshold voltage
vs temperature
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Figure 11. Normalized on resistance vs
temperature
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Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
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Electrical characteristics
STD3NK60ZD
Figure 14. Maximum avalanche energy vs
temperature
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STD3NK60ZD
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
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Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
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Figure 19. Unclamped inductive waveform
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Figure 20. Switching time waveform
9/14
Package mechanical data
4
STD3NK60ZD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STD3NK60ZD
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
)
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c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
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5.10
E
6.40
E1
4.70
e
2.28
e1
4.40
H
9.35
L
1
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bs
L1
L2
L4
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0.60
R
0o
V2
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6.60
4.60
10.10
2.80
0.80
1
0.20
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0068772_G
11/14
Package mechanical data
5
STD3NK60ZD
Package mechanical data
DPAK FOOTPRINT
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All dimensions are in millimeters
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TAPE AND REEL SHIPMENT
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REEL MECHANICAL DATA
DIM.
)-
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TAPE MECHANICAL DATA
DIM.
12/14
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
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Pr
mm
B1
D
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
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mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
MAX.
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD3NK60ZD
6
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
24-Jul-2008
1
First release
11-Sep-2008
2
Document status changed from preliminay data to datasheet
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STD3NK60ZD
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Please Read Carefully:
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