STD3NK80Z_09

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features Type STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 ■ ■ ■ ■ ■ VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 4.5 Ω < 4.5 Ω < 4.5 Ω < 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A 3 1 3 TO-220 TO-220FP 1 2 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. DPAK 3 2 1 IPAK Internal schematic diagram D(2) Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Table 1. Device summary Marking P3NK80Z F3NK80Z D3NK80Z D3NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape and reel Tube G(1) S(3) AM01476v1 Order codes STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1 September 2009 Doc ID 9565 Rev 6 1/18 www.st.com 18 Contents STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, DPAK IPAK 800 800 ± 30 2.5 1.57 10 70 0.56 2000 4.5 2500 -55 to 150 2.5 (1) 1.57 (1) 10 (1) 25 0.2 TO-220FP Unit VDS VDGR VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor V V V A A A W W/°C V V/ns V °C VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Symbol Thermal data Value Parameter TO-220 TO-220FP 5 62.5 300 DPAK IPAK 1.78 100 °C/W °C/W °C Unit Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.78 Doc ID 9565 Rev 6 3/18 Electrical ratings STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) Value 2.5 170 Unit A mJ 4/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1 mA, VGS= 0 VDS = max rating, VDS = max rating, Tc = 125 °C Min. 800 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20 V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 50 µA VGS = 10 V, ID = 1.25 A 3 3.75 3.8 4.5 4.5 Table 6. Symbol gfs (1) Dynamic Parameter Test conditions Min. Typ. 2.1 485 57 11 22 17 27 36 40 19 3.2 10.8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15 V, ID = 1.25 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25 V, f=1 MHz, VGS=0 Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd - - VGS=0, VDS =0 to 640 V VDD=400 V, ID= 1.25 A, RG= 4.7 Ω, VGS=10 V (see Figure 19) VDD=640 V, ID = 2.5 A VGS =10 V - - - - - - 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Doc ID 9565 Rev 6 5/18 Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, VGS=0 ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V (see Figure 21) ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C (see Figure 21) Test conditions Min 384 1600 8.4 474 2100 8.8 Typ. Max 2.5 10 1.6 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM - - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (open drain) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 6/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, DPAK, IPAK Figure 3. Thermal impedance for TO-220, DPAK, IPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics Doc ID 9565 Rev 6 7/18 Electrical characteristics Figure 8. Transconductance STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 8/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 14. Source-drain diode forward characteristics Electrical characteristics Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature Doc ID 9565 Rev 6 9/18 Test circuits STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 3 Test circuits Figure 18. Gate charge test circuit VDD 12V 2200 Figure 17. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform V(BR)DSS VD Figure 22. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 10/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 9565 Rev 6 11/18 Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 12/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J Doc ID 9565 Rev 6 13/18 Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H Doc ID 9565 Rev 6 15/18 Packing mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Revision history 6 Revision history Table 9. Date 09-Sep-2004 10-Aug-2006 26-Feb-2009 07-Sep-2009 Revision history Revision 3 4 5 6 Complete document New template, no content change Updated mechanical data VESD(G-S) value has been corrected Changes Doc ID 9565 Rev 6 17/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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