STD3NM60

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω 3 A TO-220, DPAK, IPAK , Zener-protected MDmesh™ Power MOSFET Features Type STD3NM60 STD3NM60-1 STP4NM60 650 < 1.5 Ω 3A 4A 42 W 1 2 VDSS (@Tjmax) RDS(on) max ID PW 3 1 3 DPAK TO-220 69 W 3 2 1 ■ ■ ■ ■ ■ High dv/dt and avalanche capabilities Improved ESD capability Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields Figure 1. IPAK Internal schematic diagram Applications ■ Switching Description Modems technology applies the benefits of the multiple drain process to STMicroelectronics' wellknown PowerMESH™ horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Marking D3NM60 D3NM60 P4NM60 Package DPAK IPAK TO-220 Packing Tape and reel Tube Tube Order code STD3NM60 STD3NM60-1 STP4NM60 September 2009 Doc ID 8370 Rev 4 1/17 www.st.com 17 Contents STD3NM60, STD3NM60-1, STP4NM60 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter STP4NM60 STD3NM60 STD3NM60-1 600 ± 30 4 2.52 16 69 0.55 15 -65 to 150 Storage temperature °C 3 1.9 12 42 0.33 V V A A A W W/°C V/ns °C Unit VDS VGS ID ID IDM (1) Drain-source voltage (VGS= 0) Gate- source Voltage Drain current (continuous) at TC= 25°C Drain current (continuous) at TC= 100°C Drain current (pulsed) Total dissipation at TC= 25°C Derating factor PTOT dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤3 A, di/dt ≤400 µA, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Value Parameter To-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.82 62.5 300 DPAK / IPAK 3 °C/W °C/W °C Unit Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V) Value 1.5 200 Unit A mJ Doc ID 8370 Rev 4 3/17 Electrical characteristics STD3NM60, STD3NM60-1, STP4NM60 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS =0 VDS = max rating VDS = max rating, TC = 125°C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10 V, ID = 1.5 A 3 4 1.3 Min. 600 1 10 ±5 5 1.5 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Table 6. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V , ID = 1.5 A Min. Typ. 2.7 324 132 7.4 9 4 16.5 10.5 10 3 4.7 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 - - VDD = 300 V, ID = 1.5 A RG = 4.7 Ω VGS = 10 V (see Figure 15) VDD = 480 V, ID = 3 A, VGS = 10V (see Figure 21) - - 14 - 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 3 A, VGS = 0 Test conditions Min. Typ. Max. 3 12 1.5 224 1 9 296 1.4 9.3 Unit A A V ns nC A ns µC A - Reverse recovery time ISD = 3 A, di/dt = 100 A/µs, Reverse recovery charge VDD = 100 V, Tj = 25°C Reverse recovery current (see Figure 17) Reverse recovery time ISD = 3 A, di/dt = 100 A/µs, Reverse recovery charge VDD = 100 V, Tj = 150°C Reverse recovery current (see Figure 17) - 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Symbol BVGSO Gate-source Zener diode (1) Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min. 30 Typ. Max. Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 8370 Rev 4 5/17 Electrical characteristics STD3NM60, STD3NM60-1, STP4NM60 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for DPAK and IPAK Figure 5. Thermal impedance for DPAK and IPAK Figure 6. Output characterisics Figure 7. Transfer characteristics 6/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 8370 Rev 4 7/17 Electrical characteristics Figure 14. Source-drain diode forward characteristics STD3NM60, STD3NM60-1, STP4NM60 8/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Test circuits 3 Test circuits Figure 16. Gate charge test circuit VDD 12V 2200 Figure 15. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS VD Figure 20. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 8370 Rev 4 9/17 Test circuits Figure 21. Gate charge waveform Id Vds Vgs STD3NM60, STD3NM60-1, STP4NM60 Vgs(th) Qgs1 Qgs2 Qgd 10/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 8370 Rev 4 11/17 Package mechanical data STD3NM60, STD3NM60-1, STP4NM60 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G Doc ID 8370 Rev 4 13/17 Package mechanical data STD3NM60, STD3NM60-1, STP4NM60 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 14/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Packaging mechanical data 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 Doc ID 8370 Rev 4 15/17 Revision history STD3NM60, STD3NM60-1, STP4NM60 6 Revision history Table 9. Date 14-Jan-2004 02-Sep-2009 Document revision history Revision 3 4 Inserted VDSS value @ Tjmax = 150 °C on cover page Document reformatted to improve readability Changes 16/17 Doc ID 8370 Rev 4 STD3NM60, STD3NM60-1, STP4NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 8370 Rev 4 17/17