STD44N4LF6

STD44N4LF6 N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max ID STD44N4LF6 40 V 12.5 mΩ 44 A ■ 100% avalanche tested ■ Logic level drive 3 1 Applications ■ Switching applications ■ Automotive DPAK Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram $4!"OR ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STD44N4LF6 44N4LF6 DPAK Tape and reel October 2011 Doc ID 17171 Rev 4 1/15 www.st.com 15 Contents STD44N4LF6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 17171 Rev 4 STD44N4LF6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 40 V ± 20 V ID Drain current (continuous) at TC = 25 °C 44 A ID Drain current (continuous) at TC = 100 °C 31 A Drain current (pulsed) 176 A Total dissipation at TC = 25 °C 50 W 0.33 W/°C - 55 to 175 °C Value Unit 3 °C/W 50 °C/W Value Unit IDM (1) PTOT Derating factor Tstg Tj Storage temperature Operating junction temperature 1. Pulse is rated according SOA Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max 1. When mounted on 1 Table 4. Symbol inch2, (1) 2 oz Cu. Avalanche data Parameter IAV Not-repetitive avalanche current 20 A EAS (1) Single pulse avalanche energy 150 mJ 1. Starting Tj = 25 °C, ID = IAV, VDD = 24 V Doc ID 17171 Rev 4 3/15 Electrical characteristics 2 STD44N4LF6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Parameter Test conditions Min. Typ. 40 - Max. Unit Drain-source breakdown voltage VGS= 0 ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V,Tc = 125 °C - 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V - ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA - 2.5 V RDS(on) Static drain-source on resistance VGS = 5 V, ID = 20 A VGS = 10 V, ID = 20 A 11.3 8.9 18 12.5 mΩ Min Typ. Max. Unit - pF pF pF V(BR)DSS Table 6. Symbol 1 V Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 V - 1190 200 110 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20 V, ID = 40 A VGS = 10 V (see Figure 14) - 22 5 4.3 - nC nC nC RG Intrinsic gate resistance f = 1 MHz open drain - 3.1 - Ω Test conditions Min. Typ. Max. Unit VDD = 20 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) - 8.5 45 - ns ns - 30 8 - ns ns Table 7. Symbol 4/15 Static Switching on/off (inductive load) Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time Doc ID 17171 Rev 4 STD44N4LF6 Electrical characteristics Table 8. Symbol Source drain diode Parameter Test conditions Min. Max. Unit - 44 176 A A 1.1 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 20 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, di/dt = 100 A/µs, VDD = 32 V, TJ = 150 °C (see Figure 17) - trr Qrr IRRM Typ. 25 25 2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17171 Rev 4 5/15 Electrical characteristics STD44N4LF6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM08903v1 ID (A) 280DPB K δ=0.5 0.2 D S( 100 on ) O Li per m at ite io d ni by n m this ax a R rea is Tj=175°C Tc=25°C Single pulse 0.1 -1 10 0.05 100µs 10 0.02 1ms 0.01 10ms Figure 4. 10 1 10 -5 10 VDS(V) Output characteristics Figure 5. -2 -3 10 10 -1 10 tp (s) Transfer characteristics AM08905v1 ID (A) 180 180 VGS=10V VDS=4V 160 6V 140 5V 120 160 140 120 100 100 4V 80 80 60 60 40 40 3V 20 Figure 6. -4 10 AM08904v1 ID (A) 0 0 Single pulse -2 1 0.1 1 2 20 Normalized BVDSS vs temperature AM08906v1 BVDSS (norm) 0 0 VDS(V) 3 Figure 7. 2 4 8 6 VGS(V) Static drain-source on resistance AM08907v1 RDS(on) (mΩ) VGS=10V ID=1mA 9.5 1.10 9.0 1.05 8.5 1.00 8.0 0.95 0.90 -75 6/15 7.5 7.0 -25 25 75 125 TJ(°C) Doc ID 17171 Rev 4 0 10 20 30 40 ID(A) STD44N4LF6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08908v1 VGS (V) Capacitance variations AM08909v1 C (pF) VDD=20V ID=40A 12 10 Ciss 1000 8 6 Coss 100 Crss 4 2 0 10 5 0 10 20 15 25 Figure 10. Normalized gate threshold voltage vs temperature AM08910v1 VGS(th) (norm) 0 Qg(nC) ID=250µA 10 30 20 VDS(V) Figure 11. Normalized on resistance vs temperature AM08911v1 RDS(on) (norm) VGS=10V ID=20A 1.2 2.0 1.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 -75 -25 25 75 125 TJ(°C) 0 -75 -25 25 75 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08912v1 VSD (V) TJ=-55°C 1.0 0.8 TJ=25°C 0.6 TJ=175°C 0.4 0.2 0 0 5 10 15 20 25 30 35 40 ISD(A) Doc ID 17171 Rev 4 7/15 Test circuits 3 STD44N4LF6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 17171 Rev 4 10% AM01473v1 STD44N4LF6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17171 Rev 4 9/15 Package mechanical data Table 9. STD44N4LF6 DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/15 Max. 0.20 0° 8° Doc ID 17171 Rev 4 STD44N4LF6 Package mechanical data Figure 19. DPAK (TO-252) drawing 0068772_H Figure 20. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters Doc ID 17171 Rev 4 11/15 Packaging mechanical data 5 STD44N4LF6 Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 12/15 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 17171 Rev 4 18.4 22.4 STD44N4LF6 Packaging mechanical data Figure 21. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 22. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 17171 Rev 4 13/15 Revision history 6 STD44N4LF6 Revision history Table 11. 14/15 Document revision history Date Revision Changes 23-Feb-2010 1 First release. 03-Feb-2011 2 Document status promoted from preliminary data to datasheet. 16-Sep-2011 3 Updated Table 4: Package mechanical data. Minor text changes in cover page. 25-Oct-2011 4 Updated Table 7: Switching on/off (inductive load) and Table 8: Source drain diode. Updated Table 4: Package mechanical data. Doc ID 17171 Rev 4 STD44N4LF6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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