STD46P4LLF6

STD46P4LLF6 P-channel 40 V, 0.0125 Ω typ., StripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data     Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications  Switching applications Description Figure 1: Internal schematic diagram This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D(2, TAB) Table 1: Device summary G(1) S(3) AM11258v1 Order codes Marking STD46P4LLF6 46P4LLF6 Package Packaging DPAK Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. Features Order codes VDSS RDS(on) max. ID STD46P4LLF6 40 V 0.015 Ω 46 A December 2014 DocID025772 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents STD46P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 3 Electrical characteristics (curves).................................................. 6 4 5 Test circuits ..................................................................................... 8 Package mechanical data ............................................................... 9 5.1 DPAK (TO-252) rev. Q type A mechanical data .............................. 10 6 Packaging mechanical data .......................................................... 13 7 Revision history ............................................................................ 15 2/16 DocID025772 Rev 3 STD46P4LLF6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 46 A ID Drain current (continuous) at TC = 100 °C 32.5 A Drain current (pulsed) 184 A Total dissipation at TC = 25 °C 70 W -55 to 175 °C 175 °C Value Unit 2.14 °C/W IDM (1) PTOT (1) Tstg Tj Storage temperature Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area Table 3: Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max. For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DocID025772 Rev 3 3/16 Electrical characteristics 2 STD46P4LLF6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current VDS = 40 V, (VGS = 0) VDS = 40 V, Tc = 125 °C 1 µA 10 µA IGSS Gate body leakage current VGS = ± 20 V, (VDS = 0) ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source on-resistance V(BR)DSS 40 V 1 VGS = 10 V, ID = 23 A 0.0125 0.015 Ω VGS = 4.5 V, ID =23 A 0.017 0.02 Ω Min. Typ. Max. Unit - 3525 - pF - 344 - pF - 238.5 - pF - 34 - nC - 11.3 - nC - 13.8 - nC Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 25 V, f=1 MHz, VGS = 0 VDD = 20 V, ID = 46 A VGS = 4.5 V For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. 4/16 DocID025772 Rev 3 STD46P4LLF6 Electrical characteristics Table 6: Switching on/off (inductive load) Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time Rise time VDD = 20 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V Turn-off delay time Fall time Min. Typ. Max. Unit - 49.4 - ns - 60.6 - ns - 170 - ns - 20 - ns Min. Typ. Max. Unit 1.1 V Table 7: Source-drain diode Symbol (1) VSD Parameter Test conditions Forward on voltage ISD = 23 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 46 A, di/dt = 100 A/µs, VDD = 24 V - 29 ns - 27.6 nC - 1.9 A Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DocID025772 Rev 3 5/16 Electrical characteristics (curves) 3 STD46P4LLF6 Electrical characteristics (curves) Figure 3: Thermal impedance Figure 2: Safe operating area GIPG040920141344LM ID (A) K GIPG0409141609LM δ=0.5 0.2 100 s ai ) are DS(on hi s n t ax R i n tio y m era d b Op mite Li 10 0.1 100 µs 0.05 1 ms 0.02 0.1 10 µs 1 0.01 0.1 Single pulse Tj=175 °C Tc=25 °C Single pulse 0.01 0.1 0.01 -5 10 V DS(V) 10 1 10 -3 10 -2 10 -1 tp(s) Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance GIPG020920141000LM V GS (V) V DD = 20 V ID = 10 A 12 GIPG040920141629LM R DS(on) (mΩ) V GS=10V 14 10 13.5 8 13 6 12.5 4 12.0 2 11.5 11.0 0 0 6/16 10-4 20 40 60 80 Q g(nC) DocID025772 Rev 3 0 5 10 15 20 25 30 35 40 45 ID(A) STD46P4LLF6 Electrical characteristics (curves) Figure 8: Capacitance variation Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized VBR(DSS) vs temperature Figure 12: Source-drain diode forward characteristics DocID025772 Rev 3 7/16 Test circuits 4 STD46P4LLF6 Test circuits Figure 14: Gate charge test circuit Figure 13: Switching times test circuit for resistive load VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. VG 2.7 k Ω 2200 μ F 47 k Ω 1 kΩ PW AM01469v 1 Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform t on V(BR)DSS t d(on) toff tr t d(off) tf VD 90% 90% I DM 10% ID VDD 10% 0 VDD VGS AM01472v 1 8/16 VDS 0 DocID025772 Rev 3 10% 90% AM01473v 1 STD46P4LLF6 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID025772 Rev 3 9/16 Package mechanical data 5.1 STD46P4LLF6 DPAK (TO-252) rev. Q type A mechanical data Figure 19: DPAK (TO-252) type A drawings 10/16 DocID025772 Rev 3 STD46P4LLF6 Package mechanical data Table 8: DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 R V2 1.00 0.20 0° DocID025772 Rev 3 8° 11/16 Package mechanical data STD46P4LLF6 Figure 20: DPAK (TO-252) type A footprint All dimensions are in mm 12/16 DocID025772 Rev 3 STD46P4LLF6 6 Packaging mechanical data Packaging mechanical data Figure 21: Tape for DPAK (TO-252) DocID025772 Rev 3 13/16 Packaging mechanical data STD46P4LLF6 Figure 22: Reel for DPAK (TO-252) Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Min. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/16 Max. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID025772 Rev 3 18.4 22.4 STD46P4LLF6 7 Revision history Revision history Table 10: Document revision history Date Revision Changes 17-Jan-2014 1 First release 05-Sep-2014 2 Changed the title. Updated Section "Features" and Section "Description". Updated Table 2: "Absolute maximum ratings"Table 3: "Thermal data", Table 6: "Switching on/off (inductive load)", Table 7: "Source-drain diode". 16-Dec-2014 3 Document status promoted from preliminary data to production data. Minor text changes. DocID025772 Rev 3 15/16 STD46P4LLF6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 16/16 DocID025772 Rev 3