STD4N80K5, STF4N80K5,
STP4N80K5, STU4N80K5
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
Features
TAB
Order code
VDS
RDS(on) max.
ID
PTOT
3
STD4N80K5
1
DPAK
60 W
3
1
STF4N80K5
2
800 V
TO-220FP
TAB
20 W
2.5 Ω
3A
STP4N80K5
60 W
STU4N80K5
TAB
1
2
3
3
2
1
IPAK
TO-220
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
Figure 1. Internal schematic diagram
• Zener-protected
'7$%
Applications
• Switching applications
Description
*
6
AM01476v1
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1. Device summary
Order code
Marking
Packages
Packaging
DPAK
Tape and reel
STD4N80K5
STF4N80K5
TO-220FP
4N80K5
STP4N80K5
TO-220
STU4N80K5
IPAK
February 2015
This is information on a product in full production.
DocID025105 Rev 3
Tube
1/23
www.st.com
Contents
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 9
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
DPAK(TO-252), package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-220FP, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3
TO-220, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4
IPAK(TO-251), package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK,
IPAK
Unit
TO-220FP
TO-220
VDS
Drain-source voltage
800
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
3
ID
Drain current (continuous) at TC = 100 °C
1.7
Drain current (pulsed)
12
Total dissipation at TC = 25 °C
60
IDM
(2)
PTOT
3
(1)
3
A
1.7 (1)
1.7
A
(1)
12
A
60
W
12
20
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
1
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
74.5
mJ
Peak diode recovery voltage slope
4.5
V/ns
MOSFET dv/dt ruggedness
50
V/ns
dv/dt(3)
(4)
dv/dt
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s, TC = 25 °C)
TJ
Operating junction temperature
Tstg
Storage temperature
2500
V
°C
-55 to 150
°C
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD < 3 A, di/dt < 100 A/µs, VDS(peak) ≤ V(BR)DSS
4. VDS ≤ 640 V
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb max
Unit
DPAK,
IPAK
TO-220FP
TO-220
2.08
6.25
2.08
62.5
50
°C/W
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
DocID025105 Rev 3
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Electrical characteristics
2
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
VDS = 800 V
Zero gate voltage
drain current (VGS = 0) VDS = 800 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Gate threshold voltage VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 1.5 A
resistance
Unit
800
V
1
µA
50
µA
±10
µA
4
5
V
2.1
2.5
Ω
Min.
Typ.
Max.
Unit
-
175
-
pF
-
18
-
pF
-
0.5
-
pF
VGS = ± 20 V
VGS(th)
Max.
3
Table 5. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Equivalent
capacitance time
related
VDS = 0 to 640 V, VGS = 0
-
26
-
pF
Co(er)(2)
Equivalent
capacitance energy
related
VDS = 0 to 640 V, VGS = 0
-
11
-
pF
Rg
Gate input resistance
f=1 MHz, ID = 0
-
15
-
Ω
Qg
Total gate charge
-
10.5
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
VDD = 640 V, ID = 3 A,
VGS = 10 V
(see Figure 19)
-
7.5
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical characteristics
Table 6. Switching times
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
VDD = 400 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Min.
Typ.
Max. Unit
-
16.5
-
ns
-
15
-
ns
-
36
-
ns
-
21
-
ns
Table 7. Source drain diode
Symbol
ISD
ISDM (1)
VSD
(2)
Parameter
Test conditions
Source-drain current
Min. Typ. Max. Unit
-
Source-drain current (pulsed)
3
A
12
A
1.5
V
Forward on voltage
ISD = 3 A, VGS = 0
-
trr
Reverse recovery time
-
242
ns
Qrr
Reverse recovery charge
-
1.42
µC
IRRM
Reverse recovery current
ISD = 3 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
-
12
A
ISD = 3 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 20)
-
373
ns
-
1.98
µC
-
10.5
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Test conditions
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min.
30
Typ.
Max. Unit
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
DocID025105 Rev 3
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Electrical characteristics
2.1
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
Figure 3. Thermal impedance for DPAK and
IPAK
AM15986v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
on is
10µs
100µs
)
1
1ms
10ms
0.1
0.01
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM15987v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
on is
1
100µs
1ms
10ms
0.1
0.01
0.1
10
1
100
VDS(V)
Figure 6. Safe operating area for TO-220
Figure 7. Thermal impedance for TO-220
AM15988v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
on is
10µs
)
100µs
1
1ms
10ms
0.1
0.01
0.1
6/23
1
10
100
VDS(V)
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Figure 8. Output characteristics
Electrical characteristics
Figure 9. Transfer characteristics
AM15989v1
ID (A)
AM15990v1
ID (A)
VGS=10, 11 V
5
VDS=20V
5
9V
4
4
3
3
8V
2
2
7V
1
1
6V
0
4
0
12
8
16
0
VDS(V)
Figure 10. Gate charge vs gate-source voltage
AM15991v1
VDS (V)
VGS
(V)
VDD=640V
ID=3A
VDS
12
600
10
500
8
400
6
300
4
200
2
100
7
6
5
8
9
10
VGS(V)
Figure 11. Static drain-source on-resistance
*,3'59
5'6RQ
ȍ
9*6 9
0
0
2
4
6
8
10
0
Qg(nC)
Figure 12. Capacitance variations
,'$
Figure 13. Normalized gate threshold voltage vs
temperature
*,3'59
&
S)
AM15639v1
VGS(th)
(norm)
ID=100µA
VDS=VGS
1
&LVV
0.8
&RVV
&UVV
0.6
I 0+]
9'69
0.4
-50
DocID025105 Rev 3
0
50
100
TJ(°C)
7/23
23
Electrical characteristics
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Figure 14. Normalized on-resistance vs
temperature
AM15640v1
RDS(on)
(norm)
VGS=10V
ID=1.5 A
2.4
Figure 15. Source-drain diode forward
characteristics
AM15994v1
VSD
(V)
1
2
0.9
1.6
0.8
1.2
0.7
0.8
0.6
TJ=-50°C
TJ=25°C
TJ=150°C
0.4
-50
0.5
0
50
100
0.5
TJ(°C)
Figure 16. Normalized VDS vs temperature
1
2
1.5
2.5
Figure 17. Maximum avalanche energy vs.
starting TJ
AM15642v1
VDS
(norm)
ISD(A)
AM15995v1
EAS (mJ)
1.1
ID = 1mA
60
1.06
1.02
40
0.98
20
0.94
0.9
-50
8/23
0
50
100
TJ(°C)
DocID025105 Rev 3
0
0
40
80
120
TJ(°C)
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 21. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID025105 Rev 3
10%
AM01473v1
9/23
23
Package information
4
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
4.1
Package information
DPAK(TO-252), package information
Figure 24. DPAK (TO-252) type A outline
B5
DocID025105 Rev 3
11/23
23
Package information
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Figure 25. DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
L1
2.80
L2
0.80
L4
0.60
1.00
R
V2
12/23
Max.
0.20
0°
8°
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Package information
Figure 26. DPAK (TO-252) footprint (a)
)3B5
a. All dimensions are in millimeters
DocID025105 Rev 3
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23
Package information
4.2
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
TO-220FP, package information
Figure 27. TO-220FP outline
7012510_Rev_K_B
14/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Package information
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID025105 Rev 3
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23
Package information
4.3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
TO-220, package information
Figure 28. TO-220 type A outline
BW\SH$B5HYB7
16/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Package information
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID025105 Rev 3
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23
Package information
4.4
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
IPAK(TO-251), package information
Figure 29. IPAK (TO-251) type A outline
B0
18/23
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Package information
Table 11. IPAK (TO-251) type A mechanical data
mm.
DIM
min.
typ.
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
DocID025105 Rev 3
1.00
19/23
23
Packaging mechanical data
5
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
20/23
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID025105 Rev 3
18.4
22.4
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Packaging mechanical data
Figure 30. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 31. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
DocID025105 Rev 3
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23
Revision history
6
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Revision history
Table 13. Document revision history
Date
Revision
09-Aug-2013
1
First release
13-Dec-2013
2
– Added: IPAK package
– Added: Table 11 and Figure 29
– Minor text changes
3
– Updated title and description in cover page.
– Updated Table 2.: Absolute maximum ratings, Table 5.: Dynamic
and Table 7.: Source drain diode.
– Updated 4: Package information and 5: Packaging mechanical
data.
– Minor text changes.
04-Feb-2015
22/23
Changes
DocID025105 Rev 3
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
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