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STD4NK50Z-1

STD4NK50Z-1

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-251-3

  • 描述:

    MOSFET N-CH 500V 3A IPAK

  • 数据手册
  • 价格&库存
STD4NK50Z-1 数据手册
STD4NK50Z-1, STD4NK50ZT4 Datasheet N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages Features Order codes TAB STD4NK50Z-1 TAB IPAK 1 2 2 3 1 3 DPAK D(2, TAB) G(1) STD4NK50ZT4 • • • • • VDS RDS(on) max. PTOT 500 V 2.7 Ω 45 W Package IPAK DPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications • S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK50Z-1 STD4NK50ZT4 DS2913 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD4NK50Z-1, STD4NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 500 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 3 A Drain current (continuous) at TC = 100 °C 1.9 A Drain current (pulsed) 12 A Total dissipation at TC = 25 °C 45 W Peak diode recovery voltage slope 4.5 V/ns Gate-source human body model (C = 100 pF, R = 1.5 kΩ) 2.8 kV -55 to 150 °C ID ID IDM (1) PTOT dv/dt (2) ESD Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 3 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit IPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) DPAK 2.78 °C/W 100 °C/W Thermal resistance junction-pcb 50 °C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol IAR EAS DS2913 - Rev 3 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 3 A 120 mJ page 2/23 STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 500 Unit V VGS = 0 V, VDS = 500 V 1 µA VGS = 0 V, VDS = 500 V, TC = 125 °C (1) 50 µA ±10 µA 3.75 4.5 V 2.2 2.7 Ω Typ. Max. Unit IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.5 A 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VGS = 0 V, VDS = 0 V to 400 V Qg Total gate charge VDD = 400 V, ID = 3 A, Qgs Gate-source charge VGS = 0 to 10 V Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) Qgd Min. 310 - 49 pF 10 - 33 12 - 3 nC 7 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS2913 - Rev 3 Parameter Test conditions Turn-on delay time VDD = 250 V, ID = 1.5 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time Fall time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Min. Typ. Max. Unit 10 7 - 21 ns 11 page 3/23 STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 3 ISDM (1) Source-drain current (pulsed) - 12 VSD (2) Forward on voltage ISD = 3 A, VGS = 0 V - 1.6 trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs - 260 ns Qrr Reverse recovery charge VDD = 40 V, Tj = 150 °C - 935 nC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 7.2 A Min. Typ. Max. Unit ±30 - - V IRRM A V 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS2913 - Rev 3 page 4/23 STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GC20460 K 100 10-1 10-2 10-5 DS2913 - Rev 3 10-4 10-3 10-2 10-1 tp (s) Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Capacitance variations Figure 6. Gate charge vs gate-source voltage page 5/23 STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics (curves) Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 9. Source-drain diode forward characteristic Figure 10. Maximum avalanche energy vs temperature Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Normalized on resistance vs temperature DS2913 - Rev 3 page 6/23 STD4NK50Z-1, STD4NK50ZT4 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS2913 - Rev 3 page 7/23 STD4NK50Z-1, STD4NK50ZT4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS2913 - Rev 3 page 8/23 STD4NK50Z-1, STD4NK50ZT4 IPAK (TO-251) type A package information 4.1 IPAK (TO-251) type A package information Figure 19. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS2913 - Rev 3 page 9/23 STD4NK50Z-1, STD4NK50ZT4 IPAK (TO-251) type A package information Table 9. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS2913 - Rev 3 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 10/23 STD4NK50Z-1, STD4NK50ZT4 IPAK (TO-251) type C package information 4.2 IPAK (TO-251) type C package information Figure 20. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS2913 - Rev 3 page 11/23 STD4NK50Z-1, STD4NK50ZT4 IPAK (TO-251) type C package information Table 10. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS2913 - Rev 3 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 12/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) type A package information 4.3 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS2913 - Rev 3 page 13/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) type A package information Table 11. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS2913 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 14/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) type C package information 4.4 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_25 DS2913 - Rev 3 page 15/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) type C package information Table 12. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS2913 - Rev 3 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 16/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) type C package information Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25_C DS2913 - Rev 3 page 17/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) packing information 4.5 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS2913 - Rev 3 page 18/23 STD4NK50Z-1, STD4NK50ZT4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 13. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS2913 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 19/23 STD4NK50Z-1, STD4NK50ZT4 Ordering information 5 Ordering information Table 14. Order codes Order code STD4NK50Z-1 STD4NK50ZT4 DS2913 - Rev 3 Marking D4NK50Z Package Packing IPAK Tube DPAK Tape and reel page 20/23 STD4NK50Z-1, STD4NK50ZT4 Revision history Table 15. Document revision history Date Version 09-Dec-2002 2 Changes Updated document. Removed maturity status indication from cover page. The document status is production data. The part numbers STP4NK50Z and STP4NK50FP have been moved to a separate datasheet. 20-Aug-2018 3 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Added Section 5 Ordering information. Minor text changes. DS2913 - Rev 3 page 21/23 STD4NK50Z-1, STD4NK50ZT4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5 4.1 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.5 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 DS2913 - Rev 3 page 22/23 STD4NK50Z-1, STD4NK50ZT4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS2913 - Rev 3 page 23/23
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