STD4NK80ZT4

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features ■ Type VDSS (@Tjmax) RDS(on) ID STP4NK80Z 800 V < 3.5 Ω 3A STP4NK80ZFP 800 V < 3.5 Ω 3A STD4NK80Z 800 V < 3.5 Ω 3A STD4NK80Z-1 800 V < 3.5 Ω 3A 3 1 TO-220 Extremely high dv/dt capability 2 TO-220FP 3 3 2 1 ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility DPAK 1 IPAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number Marking Package Packaging STP4NK80Z P4NK80Z TO-220 Tube STP4NK80ZFP P4NK80ZFP TO-220FP Tube STD4NK80ZT4 D4NK80Z DPAK Tape & reel STD4NK80Z-1 D4NK80Z IPAK Tube August 2006 Rev 8 1/18 www.st.com 18 Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220/DPAK/ IPAK Unit TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 3 3 (1) A ID Drain current (continuous) at TC=100°C 1.89 1.89 (1) A IDM(2) Drain current (pulsed) 12 12 (1) A PTOT Total dissipation at TC = 25°C 80 25 W 0.64 0.21 W/°C Derating factor VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5KΩ) 3000 V 4.5 V/ns Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) - Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter Rthj-case Thermal resistance junctioncase max Rthj-a Thermal resistance junctionambient max Tl Maximum lead temperature for soldering purpose Value TO-220 TO-220FP 1.56 5 62.5 300 Unit DPAK IPAK 1.56 °C/W 100 °C/W °C 3/18 Electrical ratings Table 3. STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Avalanche characteristics Symbol IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Table 4. Symbol BVGSO 1.1 Parameter Value Unit 3 A 190 mJ Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max. Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 50µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 1.5 A Table 6. Symbol Min. Typ. Max. Unit 800 3 V 1 50 µA µA ±10 µA 3.75 4.5 V 3 3.5 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS =15V, ID = 1.5A 2.9 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 575 67 13 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 400V 60 pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=400 V, ID= 1.5 A, RG=4.7Ω, VGS=10V (see Figure 18) 13 12 35 32 ns ns ns ns tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD=640 V, ID= 3 A, RG=4.7Ω, VGS=10V (see Figure 16) 18 7.5 25 ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640V, ID = 3 A VGS =10V (see Figure 19) 22.5 4.2 11.3 nC nC nC Cosseq(2). 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/18 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Min Typ. Max Unit Source-drain current 3 A Source-drain current (pulsed) 12 A (2) Forward on voltage ISD= 3 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3 A, di/dt = 100A/µs, VDD=80 V, Tj=150°C (see Figure 20) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/18 Test conditions (1) ISDM VSD STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 400 1520 7.6 ns µC A STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO220/DPAK/IPAK Figure 2. Thermal impedance for TO220/DPAK/IPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 7/18 Electrical characteristics STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Source-drain diode forward characteristics 8/18 Figure 8. Static drain-source on resistance Figure 12. Normalized BVdss vs temperature STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 13. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 14. Avalanche energy vs temperature Figure 15. Normalized on resistance vs temperature 9/18 Test circuit 3 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Test circuit Figure 16. Unclamped Inductive load test circuit Figure 17. Unclamped Inductive waveform Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/18 Package mechanical data STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/18 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/18 Package mechanical data STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 e e1 H L (L1) L2 L4 R V2 TYP 5.1 6.4 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 14/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 15/18 Packaging mechanical data 5 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/18 inch 1.5 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 6 Revision history Revision history Table 8. Revision history Date Revision Changes 30-Mar-2005 5 Preliminary version 06-Sep-2005 6 Final version 21Jan-2006 7 Inserted ecopack indication 16-Aug-2006 8 New template, no content change 17/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18