STD52P3LLH6

STD52P3LLH6 Datasheet P-channel 30 V, 10 mΩ typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Features TAB 2 3 1 • • • • DPAK D(2, TAB) Order codes V DSS RDS(on) max ID PTOT STD52P3LLH6 30 V 12 mΩ 52 A 70 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications G(1) Description S(3) AM11258v1 This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking 52P3LLH6 Package DPAK Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com STD52P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 52 A Drain current (continuous) at TC = 100 °C 37.5 A IDM (1) Drain current (pulsed) 208 A PTOT Total power dissipation at TC = 25 °C 70 W Tstg Storage temperature -55 to 175 °C 175 °C Value Unit 2.14 °C/W ID TJ Max. operating junction temperature 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Rthj-case Note: DS10148 - Rev 3 Parameter Thermal resistance junction-case max For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 2/15 STD52P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. Static Symbol V(BR)DSS Parameter Drain-source breakdown Voltage Test conditions ID = 250 µA, VGS = 0 V Min. Typ. Max. 30 Unit V VGS = 0 V, VDS = 30 V 1 µA VGS = 0 V, VDS = 30 V, TC = 125 °C 10 µA ±100 nA 2.5 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS = ±20 V, VDS = 0 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 1 VGS = 10 V, ID = 26 A 10 12 mΩ VGS = 4.5 V, ID = 26 A 14 17 mΩ Min Typ. Max. Unit - 3350 - pF - 414 - pF - 287 - pF - 33 - nC - 14 - nC - 11 - nC Min. Typ. Max. Unit - 12.8 - ns Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 15 V, ID = 52 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching on/off (inductive load) Symbol td(on) tr td(off) tf Note: DS10148 - Rev 3 Parameter Turn-on delay time Test conditions VDD = 24 V, ID = 15 A, Rise time RG = 4.7 Ω, VGS = 10 V - 112 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 61 - ns - 45 - ns Fall time For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 3/15 STD52P3LLH6 Electrical characteristics Table 6. Source-drain diode Symbol VSD(1) Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = 52 A, VGS = 0 V ISD = 52 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 14. Test circuit for inductive load switching and diode recovery times) Min. Typ. - Max. Unit 1.1 V - 25.2 ns - 17.4 nC - 1.4 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Note: DS10148 - Rev 3 For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. page 4/15 STD52P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance GIPG280820141231MT ID (A) 10 GIPG280820141339MT δ=0.5 s ai are n) (o his n t R DS i n x tio ma era by Op ited lim 100 K 0.2 100µs 0.1 1ms 10ms 0.05 0.1 0.02 1 0.01 0.1 Single pulse Tj=175°C Tc=25°C 0.1 0.1 1 VDS(V) 10 GIPG280820141409MT 8V VGS = 9,10V 200 150 5V 150 100 4V 100 50 3V 50 4 6 8 VDS(V) Figure 5. Gate charge vs gate-source voltage GIPG290820141127MT VGS (V) VDD=15V IG=52A 12 2 4 VGS(V) 8 6 Figure 6. Static drain-source on-resistance GIPG290820141143MT RDS(on) (mΩ) 11.50 VGS=10V 10.50 8 10.00 6 DS10148 - Rev 3 0 0 11.00 10 9.50 4 9.00 2 8.50 0 t p (s) VDS=4V 7V 6V 2 10 -1 10 -2 10 -3 GIPG290820141119MT ID (A) 200 0 0 10 -4 Figure 4. Transfer characteristics Figure 3. Output characteristics ID (A) 0.01 10 -5 0 20 40 60 Qg(nC) 8.00 0 2 4 6 8 10 ID(A) page 5/15 STD52P3LLH6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations GIPG290820141342MT C (pF) VGS(th) GIPG290820141351MT (norm) ID = 250 µA 1.1 4000 1.0 Ciss 3000 0.9 0.8 2000 0.7 0.6 1000 0 0 0.5 Coss Crss 5 15 10 25 20 0.4 -75 VDS(V) RDS(on) GIPG290820141400MT 125 175 TJ (°C) GIPG290820141412MT (norm) ID = 1 mA 1.08 1.06 1.4 1.04 1.2 1.02 1.0 1.00 0.98 0.8 0.96 0.6 0.4 -75 75 V(BR)DSS VGS = 10 V 1.6 25 Figure 10. Normalized V(BR)DSS vs temperature Figure 9. Normalized on-resistance vs temperature (norm) -25 -25 25 75 125 0.94 0.92 -75 175 TJ (°C) -25 25 75 125 175 TJ (°C) Figure 11. Source-drain diode forward characteristics GIPG290820141433MT VSD(V) 1.2 TJ=-55°C 1.1 1.0 0.9 TJ=25°C 0.8 0.7 0.6 TJ=175°C 0.5 0.4 0 DS10148 - Rev 3 10 20 30 40 50 ISD(A) page 6/15 STD52P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10148 - Rev 3 page 7/15 STD52P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 15. DPAK (TO-252) type A package outline 0068772_A_26 DS10148 - Rev 3 page 8/15 STD52P3LLH6 DPAK (TO-252) type A package information Table 7. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10148 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 9/15 STD52P3LLH6 DPAK (TO-252) type A package information Figure 16. DPAK (TO-252) type A recommended footprint (dimensions are in mm) FP_0068772_26 DS10148 - Rev 3 page 10/15 STD52P3LLH6 DPAK (TO-252) packing information 4.2 DPAK (TO-252) packing information Figure 17. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10148 - Rev 3 page 11/15 STD52P3LLH6 DPAK (TO-252) packing information Figure 18. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 8. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10148 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 12/15 STD52P3LLH6 Revision history Table 9. Document revision history Date Revision 02-Jun-2014 1 Changes First release Updated the title, the features and the description in cover page. 24-Sep-2014 2 Updated Table 2: "Absolute maximum ratings", Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". Minor text changes. 11-Feb-2020 DS10148 - Rev 3 3 Datasheet status promoted from preliminary to production data. Minor text changes. page 13/15 STD52P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS10148 - Rev 3 page 14/15 STD52P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS10148 - Rev 3 page 15/15