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STD5N20LT4

STD5N20LT4

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    MOSFET N-CH 200V 5A DPAK

  • 数据手册
  • 价格&库存
STD5N20LT4 数据手册
STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5A 33 W ■ ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. DPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ UPS AND MOTOR CONTROL ■ LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD5N20LT4 D5N20L DPAK TAPE & REEL Rev. 3 September 2004 NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532 1/10 STD5N20L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.6 A IDM () Drain Current (pulsed) 20 A PTOT Total Dissipation at TC = 25°C Derating Factor Tstg Tj Storage Temperature Operating Junction Temperature 33 W 0.27 W/°C –55 to 150 °C () Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS 2/10 Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 IDSS VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. 200 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA Static Drain-source On Resistance VGS = 5 V, ID = 2.5 A Unit V 1 VGS = ±20V RDS(on) Max. 1 0.65 µA 10 µA ±100 nA 2.5 V 0.7 Ω STD5N20L Table 6: Dynamic Symbol gfs (2) Parameter Forward Transconductance Test Conditions Min. VDS = 15 V, ID = 5 A Typ. Max. Unit 6.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 242 44 6 pF pF pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 100 V, ID = 2.5 A RG = 4.7Ω, VGS = 5V (Resistive Load see Figure 14) 11.5 21.5 14 15.5 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 160 V, ID = 5 A, VGS = 5V 5 1.5 3 6 nC nC nC Typ. Max. Unit 5 A 20 A 1.5 V Table 7: Source Drain Diode Symbol ISD Parameter Test Conditions Min. Source-drain Current ISDM (*) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see test circuit, see Figure 15) 93 237 5.1 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150°C (see test circuit, see Figure 15) 97 286 5.9 ns nC A trr Qrr IRRM trr Qrr IRRM (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V (*) Pulse width limited by safe operating area 3/10 STD5N20L Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STD5N20L Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics 5/10 STD5N20L Figure 14: Switching Times Test Circuit For Resistive Load Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/10 Figure 16: Gate Charge Test Circuit STD5N20L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 1.00 0.024 L2 L4 V2 0.8 0.60 0 o 0.031 8 o 0 o 0.039 0o P032P_B 7/10 STD5N20L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.059 0.153 0.161 0.065 0.073 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 * on sales type 8/10 inch 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD5N20L Table 8: Revision History Date Revision 08-June-2004 20-Sep-2004 2 3 Description of Changes New Stylesheet. Datasheet according to PCN DSG-TRA/04/532 Changes on Table 3, and on Figure 3. 9/10 STD5N20L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10
STD5N20LT4 价格&库存

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