STD70N6F3

STD70N6F3 N-channel 60 V, 8.0 mΩ, 70 A DPAK STripFET™ III Power MOSFET Preliminary data Features Type VDSS RDS(on) ID Pw STD70N6F3 60 V < 10.5 mΩ 70 A 110 W ■ Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram $4!"OR ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STD70N6F3 70N6F3 DPAK Tape & reel December 2009 Doc ID 16908 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents STD70N6F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 .............................................. 6 Doc ID 16908 Rev 1 STD70N6F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-Source voltage Value Unit 60 V ± 20 V ID Drain current (continuous) at TC = 25 °C 70 A ID Drain current (continuous) at TC = 100 °C 50 A Drain current (pulsed) 280 A Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C Peak diode recovery voltage slope TBD V/ns Single pulse avalanche energy TBD mJ Operating junction temperature Storage temperature -55 to 175 °C IDM (1) PTOT dv/dt (2) EAS (3) Tj Tstg 1. Pulse width limited by safe operating area 2. ISD ≤ 70 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS. Tj ≤ Tjmax 3. Starting Tj = 25°C, Id = 35 A, Vdd = 40 V Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max 1.36 °C/W Thermal resistance junction-pcb max 50 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu. Doc ID 16908 Rev 1 3/11 Electrical characteristics 2 STD70N6F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 60 V VDS = Max rating, VDS = Max rating,Tc = 125 °C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 35 A 10.5 mΩ IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 2 8.0 Dynamic Parameter Test conditions Min Typ. Max. Unit Forward transconductance VDS =25 V, ID=35 A - Tbd S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1MHz, VGS=0 - 2200 500 25 pF pF pF Total gate charge Gate-source charge Gate-drain charge VGS =10 V - 35 15 10 VDD=48 V, ID = 70 A (see Figure 5) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/11 Min. Typ. Max. Unit Doc ID 16908 Rev 1 TBD nC nC nC STD70N6F3 Electrical characteristics Table 6. Symbol Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit - TBD TBD - ns ns - TBD TBD - ns ns Min. Typ. Max. Unit - 70 280 A A - 1.5 V VDD=30 V, ID= 35 A, td(on) tr RG=4.7 Ω, VGS=10 V Turn-on delay time Rise time (see Figure 4), (see Figure 7) VDD=30 V, ID= 35 A, td(off) tf Table 7. Symbol ISD RG=4.7 Ω, VGS=10 V Turn-off delay time Fall time (see Figure 4), (see Figure 7) Source drain diode Parameter Source-drain current ISDM Source-drain current (pulsed)(1) VSD Forward on voltage trr Qrr IRRM Test conditions ISD=70 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=70 A, di/dt =100 A/µs, VDD=30 V, Tj=150 °C (see Figure 6) - TBD TBD TBD ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 16908 Rev 1 5/11 Test circuits STD70N6F3 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/11 0 Doc ID 16908 Rev 1 10% AM01473v1 STD70N6F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16908 Rev 1 7/11 Package mechanical data STD70N6F3 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 8/11 Doc ID 16908 Rev 1 STD70N6F3 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 MIN. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.059 0.065 0.073 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 16908 Rev 1 9/11 Revision history 6 STD70N6F3 Revision history Table 8. 10/11 Revision history Date Revision 11-Dec-2009 1 Changes First release Doc ID 16908 Rev 1 STD70N6F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 16908 Rev 1 11/11