STD7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Features
TAB
Order code
VDS
RDS(on)
max
ID
STD7N65M2
650 V
1.15 Ω
5A
• Extremely low gate charge
3
1
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
DPAK
• Zener-protected
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
D(2, TAB)
This device is an N-channel Power MOSFET
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the most
demanding high efficiency converters.
G(1)
S(3)
AM15572v1
Table 1. Device summary
Order code
Marking
Package
Packaging
STD7N65M2
7N65M2
DPAK
Tape and reel
May 2015
This is information on a product in full production.
DocID026787 Rev 2
1/17
www.st.com
Contents
STD7N65M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 8
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . .11
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
DocID026787 Rev 2
STD7N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
5
A
ID
Drain current (continuous) at TC = 100 °C
3.2
A
IDM(1)
Drain current (pulsed)
20
A
PTOT
W
Total dissipation at TC = 25 °C
60
dv/dt
(2)
Peak diode recovery voltage slope
15
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Tj
V/ns
Storage temperature
- 55 to 150
°C
Value
Unit
Operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 520 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
2.08
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50(1)
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
1
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50 V)
103
mJ
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17
Electrical characteristics
2
STD7N65M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
650
V
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V,
TC=125 °C
100
µA
VDS = 0, VGS = ± 25 V
±10
µA
3
4
V
0.98
1.15
Ω
Min.
Typ.
Max.
Unit
-
270
-
pF
-
14.5
-
pF
-
0.8
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 2.5 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0
-
108
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
-
9
-
nC
Qgs
Gate-source charge
-
2.3
-
nC
Qgd
Gate-drain charge
VDD = 520 V, ID = 5 A,
VGS = 10 V
(see Figure 15)
-
4.3
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/17
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 325 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Fall time
DocID026787 Rev 2
Min.
Typ.
Max. Unit
-
8
-
ns
-
20
-
ns
-
30
-
ns
-
20
-
ns
STD7N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
5
A
ISDM
(1)
Source-drain current (pulsed)
-
20
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 5 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
-
275
ns
-
1.62
µC
-
11.8
A
-
430
ns
-
2.54
µC
-
11.9
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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17
Electrical characteristics
2.1
STD7N65M2
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
GIPG060820141409FSR
ID
(A)
10
)
on
S(
O
p
Li e r a
m
ite tion
d
by i n t
m his
ax a
R D rea
is
10μs
1
100μs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
1
10
100
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
GIPG060820141159FSR
ID (A)
VGS=7, 8, 9, 10V
GIPG060820141210FSR
ID
(A)
8
VDS=20V
8
6V
6
6
4
4
5V
2
2
4V
0
0
10
5
20
15
Figure 6. Gate charge vs gate-source voltage
GIPG060820141216FSR
VDS
VGS
(V)
RDS(on)
(Ω)
600
1.04
10
500
1.02
8
400
1.0
6
300
0.98
4
200
0.96
2
100
0.94
VDS
VDD=520V
ID=5A
0
0
2
4
6
8
10
0
Qg(nC)
2
6
4
8
VGS(V)
Figure 7. Static drain-source on-resistance
(V)
12
6/17
0
0
VDS(V)
GIPG060820141221FSR
VGS=10V
0.92
DocID026787 Rev 2
0
1
2
3
4
5
ID(A)
STD7N65M2
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
GIPG060820141238FSR
C
(pF)
1000
GIPG060820141302FSR
Eoss
(μJ)
2.4
Ciss
100
1.8
10
Coss
1.2
1
Crss
0.6
0.1
0.1
1
100
10
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
AM18065v1
VGS(th)
(norm)
100
200 300
AM18066v1
RDS(on)
ID=2.5A
VGS=10V
ID=250μA
1.1
2.2
1.0
1.8
0.9
1.4
0.8
1.0
0.7
0.6
25
0 25
75
125
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
GIPG060820141313FSR
VSD (V)
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
(norm)
0.6
-75
400 500 600
0.2
-75
-25
0 25
75
125 TJ(°C)
Figure 13. Normalized V(BR)DSS vs temperature
AM18067v1
V(BR)DSS
(norm)
TJ=-50°C
1.1
ID=1mA
1.08
1
1.04
0.9
TJ=25°C
1.00
0.8
0.96
0.7
0.6
0.5
0
0.92
TJ=150°C
1
2
3
4
5
ISD(A)
0.88
-75
DocID026787 Rev 2
-25
0 25
75
125
TJ(°C)
7/17
17
Test circuits
3
STD7N65M2
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
9%5'66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
8/17
0
DocID026787 Rev 2
10%
AM01473v1
STD7N65M2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
DPAK (TO-252) type A package information
Figure 20. DPAK (TO-252) type A package outline
B$B
DocID026787 Rev 2
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17
Package information
STD7N65M2
Table 9. DPAK (TO-252) type A package mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
5.10
V2
5.25
6.60
1.00
R
10/17
Max.
0.20
0°
8°
DocID026787 Rev 2
STD7N65M2
4.2
Package information
DPAK (TO-252) type C package information
Figure 21. DPAK (TO-252) type C package outline
BBW\SHB&
DocID026787 Rev 2
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17
Package information
STD7N65M2
Table 10. DPAK (TO-252) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.25
E
5.33
6.10
6.20
6.50
6.60
6.70
e
2.186
2.286
2.386
E1
4.70
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
2.90 REF
0.90
1.25
L3
L4
0.51 BSC
0.60
0.80
L6
12/17
5.46
1.00
1.80 BSC
Θ1
5°
7°
9°
Θ2
5°
7°
9°
V2
0°
8°
DocID026787 Rev 2
STD7N65M2
Package information
Figure 22. DPAK footprint (a)
)3B4
a. All dimensions are in millimeters
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17
Packaging mechanical data
5
STD7N65M2
Packaging mechanical data
Figure 23. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
14/17
DocID026787 Rev 2
STD7N65M2
Packaging mechanical data
Figure 24. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 11. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
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18.4
22.4
15/17
17
Revision history
6
STD7N65M2
Revision history
Table 12. Document revision history
16/17
Date
Revision
Changes
07-Aug-2014
1
First release.
06-May-2015
2
Document status promoted from preliminary to production data.
Updated Section 4: Package information.
DocID026787 Rev 2
STD7N65M2
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