STD7NK30Z, STF7NK30Z
STP7NK30Z
N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
Pw
STF7NK30Z
300 V
< 0.9 Ω
5A
20 W
STP7NK30Z
300 V
< 0.9 Ω
5A
50 W
STD7NK30Z
300 V
< 0.9 Ω
5A
50 W
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
Applications
■
3
1
)
s
(
ct
Description
1
e
t
e
l
o
s
b
-O
2
TO-220
u
d
o
TO-220FP
Figure 1.
Switching application
)
s
(
ct
3
2
Pr
3
1
DPAK
Internal schematic diagram
u
d
o
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
r
P
e
t
e
l
o
s
b
O
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD7NK30Z
D7NK30Z
DPAK
Tape and reel
STF7NK30Z
F7NK30Z
TO-220FP
Tube
STP7NK30Z
P7NK30Z
TO-220
Tube
March 2009
Rev 5
1/15
www.st.com
15
Electrical ratings
1
STx7NK30Z
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220, DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
300
V
VGS
Gate- source voltage
± 30
V
ID
ID
IDM
(2)
PTOT
5
5 (1)
3.2
3.2 (1)
Drain current (pulsed)
20
(1)
Total dissipation at TC = 25 °C
50
Derating factor
0.4
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
VESD(G-S)
Gate source ESD(HBM-C=100 pF,
R=1.5 kΩ)
dv/dt (3)
Peak diode recovery voltage slope
e
t
e
ol
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Tj
Tstg
Operating junction temperature
Storage temperature
)-
20
o
r
P
s
b
O
VISO
)
s
(
t
c
u
d
20
0.16
A
A
W
W/°C
2800
V
4.5
V/ns
2500
-55 to 150
s
(
t
c
A
V
V
1. Limited only by maximum temperature allowed
u
d
o
2. Pulse width limited by safe operating area
3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
r
P
e
Table 3.
let
o
s
b
O
Symbol
Value
Parameter
Rthj-case Thermal resistance junction-case Max
Unit
TO-220, DPAK
TO-220FP
2.50
6.25
V
Rthj-amb
Thermal resistance junction-ambient Max
62.5
V
Tl
Maximum lead temperature for soldering
purpose
300
A
Table 4.
2/15
Absolute maximum ratings
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
130
mJ
STx7NK30Z
2
Electrical characteristics
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Table 6.
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
gfs
Ciss
Coss
Crss
Coss eq. (2)
Qg
Qgs
Qgd
ID =1 mA, VGS = 0
Min.
Typ.
1
50
VGS = ± 20 V
±10
VDS = VGS, ID = 50 µA
3
0.80
r
P
e
let
Test conditions
Min.
Typ.
Forward transconductance VDS =15 V, ID = 2.5 A
2.5
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0
380
74
15
VGS = 0, VDS = 0 to 240 V
30
VDD = 240 V, ID = 7 A,
VGS = 10 V
Figure 16
13
4.5
7.6
s
(
t
c
u
d
o
Total gate charge
Gate-source charge
Gate-drain charge
r
P
e
O
)
µA
µA
(s)
µA
ct
3.75
u
d
o
VGS = 10 V, ID = 2.5 A
o
s
b
Unit
V
VDS=max rating
VDS=max rating @125 °C
Parameter
Equivalent output
capacitance
Max.
300
Dynamic
Symbol
(1)
Test conditions
4.5
V
0.90
Ω
Max.
Unit
S
pF
pF
pF
pF
17
nC
nC
nC
t
e
l
o
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
s
b
O
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
3/15
Electrical characteristics
Table 7.
STx7NK30Z
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 150 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 15
11
25
20
10
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 240 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 15
8.5
8.5
20
ns
ns
ns
Table 8.
Symbol
Parameter
Test conditions
Min.
ISDM
(1)
Source-drain current
Source-drain current
(pulsed)
VSD
(2)
Forward On voltage
ISD = 5 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 40 V, Tj = 150 °C
Figure 20
ISD
trr
Qrr
IRRM
)
s
(
ct
Source Drain Diode
1. Pulse width limited by safe operating area.
)
(s
u
d
o
r
P
e
t
e
l
o
s
b
O
Typ.
Max.
Unit
5
20
A
A
1.6
V
154
716
9.3
ns
nC
A
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 9.
Symbol
e
t
e
ol
s
b
O
4/15
Parameter
od
Pr
BVGSO(1)
t
c
u
Gate-source Zener diode
Gate-source breakdown
voltage
Test conditions
Igs=± 1mA (open drain)
Min.
Typ.
Max.
Unit
30
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
V
STx7NK30Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
)
s
(
ct
Figure 4.
Safe operating area for TO-220FP
)
(s
Figure 5.
u
d
o
r
P
e
Thermal impedance for TO-220FP
t
e
l
o
s
b
O
t
c
u
d
o
r
t
e
l
o
P
e
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
s
b
O
5/15
Electrical characteristics
Figure 8.
STx7NK30Z
Static drain source on resistance
Figure 9.
Normalized BVDSS vs temperature
)
s
(
ct
u
d
o
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
Figure 12. Normalized gate threshold voltage
vs temperature
t
e
l
o
s
b
O
6/15
Figure 13. Normalized on resistance vs
temperature
STx7NK30Z
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
7/15
Test circuits
3
STx7NK30Z
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
)
s
(
t
VG
2.7kΩ
c
u
d
PW
47kΩ
1kΩ
PW
D.U.T.
AM01468v1
e
t
e
ol
o
r
P
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
A
D
G
S
s
(
t
c
3.3
µF
B
25 Ω
D
1000
µF
RG
S
r
P
e
2200
µF
3.3
µF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
Figure 19. Unclamped inductive waveform
b
O
L
VD
VDD
u
d
o
G
so
)-
L=100µH
s
b
O
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
10%
AM01473v1
STx7NK30Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
9/15
Package mechanical data
STx7NK30Z
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
r
P
e
Max
0.181
0.034
0.066
0.027
0.62
)
s
(
ct
3.85
2.95
u
d
o
r
P
e
t
e
l
o
bs
3.75
2.65
u
d
o
10/15
0.173
0.024
0.044
0.019
0.6
0.050
16.40
28.90
s
(
t
c
s
b
O
Min
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
O
)
t
e
l
o
Max
0.147
0.104
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.151
0.116
STx7NK30Z
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.5
G
4.95
G1
2.4
H
10
5.2
e
t
e
ol
16
L3
28.6
L4
9.8
L5
2.9
L6
15.9
)
(s
L7
9
t
c
u
Dia
A
Pr
2.7
10.4
30.6
s
b
O
10.6
3.6
16.4
9.3
3
od
r
P
e
)
s
(
ct
u
d
o
L2
t
e
l
o
Max.
3.2
L7
E
B
D
Dia
bs
L5
L6
O
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_J
11/15
Package mechanical data
STx7NK30Z
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
)
s
(
ct
5.10
E
du
6.40
6.60
E1
4.70
e
2.28
e1
4.40
H
9.35
L
1
e
t
e
ol
L1
o
r
P
4.60
10.10
2.80
bs
L2
L4
0.60
O
)
R
0o
V2
0.80
1
0.20
8o
s
(
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
0068772_G
12/15
STx7NK30Z
5
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
)
s
(
ct
All dimensions are in millimeters
u
d
o
r
P
e
TAPE AND REEL SHIPMENT
t
e
l
o
REEL MECHANICAL DATA
DIM.
)-
s
(
t
c
u
d
o
TAPE MECHANICAL DATA
DIM.
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
e
t
e
ol
s
b
O
Pr
mm
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
A
MAX.
MAX.
K0
W
s
b
O
mm
MIN.
1.574
16.3
0.618
0.641
13/15
Revision history
6
STx7NK30Z
Revision history
Table 10.
Revision history
Date
Revision
Changes
10-May-2005
1
New stylesheet
05-Sep-2005
2
Inserted Ecopack indication
04-Jan-2006
3
Some values changed on table 8.
22-Mar-2006
4
Inserted DPAK
05-Mar-2009
5
Section 4: Package mechanical data has been updated
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
14/15
s
b
O
STx7NK30Z
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
e
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
t
e
l
o
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
)
(s
s
b
O
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
t
c
u
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
d
o
r
P
e
t
e
l
o
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
s
b
O
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
15/15
工商网监
湘ICP备2023018690号
