STD80N6F6

STD80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features      Order code VDS RDS(on) max. ID STD80N6F6 60 V 5 mΩ 80 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications  D(2, TAB) Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM01475v1_noZen Table 1: Device summary Order code Marking Package Packaging STD80N6F6 80N6F6 DPAK Tape and reel May 2017 DocID023471 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents STD80N6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 5 2/16 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) tape and reel mechanical data .............................. 13 Revision history ............................................................................ 15 DocID023471 Rev 3 STD80N6F6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC= 100 °C 80 A IDM(2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 120 W Tstg Storage temperature range - 55 to 175 °C Tj Operating junction temperature range Notes: (1)Current (2) limited by package. Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Rthj-pcb (1) Value Unit Thermal resistance junction-case 1.25 °C/W Thermal resistance junction-pcb 50 °C/W Notes: (1)When mounted on a 1-inch² FR-4 board, 2oz Cu. DocID023471 Rev 3 3/16 Electrical characteristics 2 STD80N6F6 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 µA VGS = 0 V, VDS = 60 V, Tj = 125 °C (1) 100 µA Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID= 40 A 4.4 5 mΩ Min. Typ. Max. Unit - 8325 - pF - 500 - pF - 400 - pF - 147 - nC - 44 - nC - 46 - nC Test conditions Min. Typ. Max. Unit VDD = 30 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 40 - ns - 71 - ns - 132 - ns - 40 - ns IDSS Zero gate voltage drain current IGSS 3 Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 80 A, VGS = 0 to 10 V (see Figure 14: "Test circuit for gate charge behavior") Table 6: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID023471 Rev 3 STD80N6F6 Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions ISD(1) Source-drain current ISDM(2) Source-drain current (pulsed) VSD(3) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min. Typ. Max. Unit - 80 A - 320 A VGS = 0 V, ISD = 80 A - 1.3 V ISD = 80 A, di/dt = 100 A/µs, VDD = 48 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 46 ns - 65 nC - 2.8 A Notes: (1) Current limited by package. (2) Pulse width limited by safe operating area. (3) Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DocID023471 Rev 3 5/16 Electrical characteristics 2.1 STD80N6F6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs. temperature Figure 7: Normalized V(BR)DSS vs. temperature 6/16 DocID023471 Rev 3 STD80N6F6 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature (m Ω ) Figure 10: Gate charge vs. gate-source voltage Figure 11: Capacitance variations Figure 12: Source- drain diode forward characteristics DocID023471 Rev 3 7/16 Test circuits 3 8/16 STD80N6F6 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID023471 Rev 3 STD80N6F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID023471 Rev 3 9/16 Package mechanical data 4.1 STD80N6F6 DPAK (TO-252) type A2 package information Figure 19: DPAK (TO-252) type A2 package outline 10/16 DocID023471 Rev 3 STD80N6F6 Package mechanical data Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID023471 Rev 3 8° 11/16 Package mechanical data STD80N6F6 Figure 20: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm) 12/16 DocID023471 Rev 3 STD80N6F6 4.2 Package mechanical data DPAK (TO-252) tape and reel mechanical data Figure 21: DPAK (TO-252) tape outline DocID023471 Rev 3 13/16 Package mechanical data STD80N6F6 Figure 22: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 14/16 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID023471 Rev 3 18.4 22.4 STD80N6F6 5 Revision history Revision history Table 10: Document revision history Date Revision 08-Aug-2012 1 Initial release. 2 – Document status promoted from preliminary to production data – Modified: title – Modified: Features – Added: note 1 in cover page – Modified: RDS(on)max and ID values in cover page – Modified: Derating factor value in Table 2 – Modified: RDS(on) values in Table 4 – Modified: ID and the entire typical values in Table 5, 6 and 7 – Added: Section 2.1: Electrical characteristics (curves) – Updated: Section 3: Package mechanical data – Minor text changes 3 Modified title and features on cover page. Modified Table 3: "Thermal data". Modified Section 4: "Package mechanical data". Minor text changes. 17-Jan-2014 23-May-2017 Changes DocID023471 Rev 3 15/16 STD80N6F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID023471 Rev 3