STD85N3LH5

STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type VDSS RDS(on) max. ID 3 STD85N3LH5 STP85N3LH5 3 1 30 V < 0.005 Ω 80 A STU85N3LH5 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 2 1 DPAK IPAK 3 1 2 TO-220 Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking STD85N3LH5 STP85N3LH5 85N3LH5 Package Packaging DPAK Tape and reel TO-220 Tube STU85N3LH5 July 2010 IPAK Doc ID 13833 Rev 7 1/16 www.st.com 16 Contents STD85N3LH5, STP85N3LH5, STU85N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 8 Doc ID 13833 Rev 7 STD85N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-source voltage ± 22 V ID (1) Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 55 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 70 W Derating factor 0.47 W/°C Single pulse avalanche energy 165 mJ -55 to 175 °C 175 °C IDM (2) PTOT EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 DPAK IPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tl Doc ID 13833 Rev 7 2.14 62.5 °C/W 100 °C/W 3/16 Electrical characteristics 2 STD85N3LH5, STP85N3LH5, STU85N3LH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS = VGS, ID = 250 µA V(BR)DSS VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1.8 2.5 V VGS = 10 V, ID = 40 A SMD version 0.042 0.005 Ω VGS = 10 V, ID = 40 A 0.0046 0.0054 Ω VGS = 5 V, ID = 40 A SMD version 0.0052 0.0065 Ω VGS = 5 V, ID = 40 A 0.0058 0.0071 Ω 1 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 1850 380 58 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 14 6.8 4.7 nC nC nC Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 2.3 nC 4.5 nC Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain 1.2 Ω Qgs1 Qgs2 RG 4/16 Static Doc ID 13833 Rev 7 Min. Typ. Max. Unit STD85N3LH5 Electrical characteristics Table 6. Symbol Switching on/off (inductive load) Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time Table 7. Symbol Test conditions VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V Figure 15 Parameter Test conditions Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 40 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V Figure 17 IRRM Typ. Max. Unit 6 14 ns ns 23.6 10.8 ns ns Source drain diode ISD ISDM(1) trr Qrr Min. Min. Typ. 31.8 26.1 1.6 Max. Unit 80 320 A A 1.1 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13833 Rev 7 5/16 Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics AM03359v1 ID (A) 160 140 120 100 80 60 40 20 0 0 Figure 6. 6/16 Normalized BVDSS vs temperature Figure 7. Doc ID 13833 Rev 7 1 2 3 VGS(V) Static drain-source on resistance STD85N3LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 13833 Rev 7 7/16 Test circuit 3 STD85N3LH5, STP85N3LH5, STU85N3LH5 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 Doc ID 13833 Rev 7 10% AM01473v1 STD85N3LH5 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 13833 Rev 7 9/16 Package mechanical data 4 STD85N3LH5, STP85N3LH5, STU85N3LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 13833 Rev 7 STD85N3LH5 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 13833 Rev 7 11/16 Package mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 TO-251 (IPAK) mechanical data mm. DIM. A min. typ max. 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/16 Doc ID 13833 Rev 7 STD85N3LH5 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 13833 Rev 7 13/16 Packaging mechanical data 5 STD85N3LH5, STP85N3LH5, STU85N3LH5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 13833 Rev 7 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD85N3LH5 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 19-Oct-2007 1 First release 20-Feb-2008 2 Minor text changes to improve readability 21-Jul-2008 3 – – – – 20-Aug-2008 4 Added max value on VGS(th) (Table 4) 25-Sep-2008 5 VGS values has been changed on Table 2 and Table 4 22-Jan-2009 6 Corrected value on Table 3: Thermal resistance 01-Jul-2010 7 VDS values has been changed on Table 4 Added new package, mechanical data: TO-220 Figure 2: Safe operating area has been corrected Figure 7: Static drain-source on resistance updated New value on Table 2: Absolute maximum ratings Doc ID 13833 Rev 7 15/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 Doc ID 13833 Rev 7